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| Number | Title | Issue Date |
| 7348229 | Method of manufacturing a semiconductor device and semiconductor device obtained with such a method The invention relates to a method of manufacturing a semiconductor device (10) with a field effect transistor, in which method a semiconductor body (1) of silicon is provided at a surface thereof with a source region (2) and a drain region (3... | 03/25/2008 |
| 6613654 | Fabrication of semiconductor devices with transition metal boride films as diffusion barriers An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming t... | 09/02/2003 |
| 6614082 | Fabrication of semiconductor devices with transition metal boride films as diffusion barriers An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming t... | 09/02/2003 |
| 6399445 | Fabrication technique for controlled incorporation of nitrogen in gate dielectric A method of fabricating a semiconductor MOS device and the device wherein there is initially provided a semiconductor substrate having a gate insulator layer thereon and intimate therewith. A region of one of a nitride or oxynitride is formed at the surfa... | 06/04/2002 |
| 6391754 | Method of making an integrated circuit interconnect A method of encapsulating metal lines (130, 132, 134, 136, 138) by implantation of dopants to form surface regions (131, 133, 135, 137, 139) after the metal lines have been fabricated. The surface regions may act as passivation layers and electromigration... | 05/21/2002 |
| 6124620 | Incorporating barrier atoms into a gate dielectric using gas cluster ion beam implantation An integrated circuit fabrication process is provided for incorporating barrier atoms, preferably N atoms, within a gate dielectric/silicon-based substrate interfacial region using gas cluster ion beam implantation. Gas cluster ion beam implantation invol... | 09/26/2000 |
| 5994210 | Method of improving silicide sheet resistance by implanting fluorine Sheet resistance of titanium silicide formed on silicon is diminished by enhancing formation of nucleation sites for the C-54 phase. Fluorine is introduced into silicon by either the implantation of BF2 or F, followed by creation of a cap oxide... | 11/30/1999 |
| 5654209 | Method of making N-type semiconductor region by implantation A semiconductor device at least including a region which contains a first impurity constituted by a group V element and a second impurity constituted by an element of high electronegativity or a halogen element such as Ti, Cl, O, Br, S, I or N in amorphou... | 08/05/1997 |
| 5190888 | Method for producing a doped polycide layer on a semiconductor substrate Method for producing a doped polycide layer on a semiconductor substrate. A polycide layer (14) is formed by producing a metal silicide layer (13a) on a polysilicon layer (12a). After the formation thereof, the polycide layer (14) is doped to an ulltimate... | 03/02/1993 |
| 4890151 | Thin-film and its forming method A method for forming an interconnection pattern of Al on a structure, such as a semiconductor device, includes the step of introducing ions of a selected material, such as As, P, B and Ar, into a film of Al to be formed into an interconnection pattern pri... | 12/26/1989 |
| 4704367 | Suppression of hillock growth through multiple thermal cycles by argon implantation A technique for suppressing hillock growth in metal films on integrated circuits through multiple thermal cycles by argon implantation. Although it was known that ion implantation of many species such as arsenic suppressed the growth of hillocks in metal ... | 11/03/1987 |
| 4569124 | Method for forming thin conducting lines by ion implantation and preferential etching A thin conducting line such as a gate pattern is defined on a semiconductor chip (10) by applying a narrow ion beam, suitably a focused-ion-beam (16) having a submicrometer thickness from a source (18) onto a thin layer (14) of an inorganic material such ... | 02/11/1986 |
| 4502207 | Wiring material for semiconductor device and method for forming wiring pattern therewith A wiring material of a semiconductor device, which comprises aluminum as a major component and at least a surface layer of the wiring layer is alloyed with boron and silicon. A method for forming a wiring material of a semiconductor device, which comprise... | 03/05/1985 |
| 4482394 | Method of making aluminum alloy film by implanting silicon ions followed by thermal diffusion Aluminum metallization layers on a semiconductor substrate are alloyed with a predetermined quantity of silicon by implanting silicon ions into the metallization layer. The layer is heated during subsequent processing to a temperature of 300° to 500° C.... | 11/13/1984 |
| 4450041 | Chemical etching of transformed structures A maskless technique is disclosed for shaping semiconductor materials by ming areas that are selectively etchable with respect to the rest of the structure. In one embodiment of this invention, a body of amorphous material is subjected to radiation by a ... | 05/22/1984 |
| 4377734 | Method for forming patterns by plasma etching Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with ox... | 03/22/1983 |
| 4314874 | Method for forming a fine pattern of an aluminum film A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions servi... | 02/09/1982 |
| 4146902 | Irreversible semiconductor switching element and semiconductor memory device utilizing the same A semiconductor switching element comprised by a high resistivity polycrystalline silicon resistor whose resistance irreversibly decreases to a small value at a threshold voltage upon the voltage across the resistor reaching the threshold voltage. A semic... | 03/27/1979 |
