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| Number | Title | Issue Date |
| 7208424 | Method of forming a semiconductor device having a metal layer A metal layer is formed over a metal oxide, where the metal oxide is formed over a semiconductor substrate. A predetermined critical dimension of the metal layer is determined. A first etch is performed to etch the metal layer down to the metal oxide and form footin... | 04/24/2007 |
| 7129185 | Substrate processing method and a computer readable storage medium storing a program for controlling same A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on t... | 10/31/2006 |
| 7125796 | Plasma etch process for multilayer vias having an organic layer with vertical sidewalls A process is provided for fabricating a via 52 between bonded wafers without undercutting an organic bonding material 32. The process for forming the via 52 in a structure including a dielectric material 14 and an organic bonding material... | 10/24/2006 |
| 6700202 | Semiconductor device having reduced oxidation interface A method and apparatus for reducing oxidation of an interface of a semiconductor device thereby improving adhesion of subsequently formed layers and/or devices is disclosed. The semiconductor device has at least a first layer and a second layer wherein th... | 03/02/2004 |
| 6686322 | Cleaning agent and cleaning process using the same A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and resid... | 02/03/2004 |
| 6682659 | Method for forming corrosion inhibited conductor layer A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to contact with a corrosive material employed for further pro... | 01/27/2004 |
| 6638445 | Silicon dioxide etch process which protects metals The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a... | 10/28/2003 |
| 6638868 | Method for preventing or reducing anodic Cu corrosion during CMP A method and apparatus for implementing the method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process the method providing at least one semiconductor wafer ... | 10/28/2003 |
| 6627587 | Cleaning compositions An aqueous cleaning composition comprising an alkanolamine, a tetraalkylammonium hydroxide, nonmetallic fluoride salt, a corrosion inhibitor, e.g. ascorbic acid or its derivatives alone or in combination, balance water. Such cleaning compositions are effe... | 09/30/2003 |
| 6605230 | Solutions and processes for removal of sidewall residue after dry etching The present invention relates to a novel process for removing sidewall residue after dry-etching process. Conventionally, after dry-etching, photoresist and sidewall residues are removed by ozone ashing and hot sulfuric acid. Normally, they are hard to be... | 08/12/2003 |
| 6599841 | Method for manufacturing a semiconductor device A method for fabricating a semiconductor device including a conductive pattern having a first layer including Ti and a second layer including W is presented. The method includes the steps of patterning the conductive pattern by a dry etching and exposing ... | 07/29/2003 |
| 6589439 | Composition for selective etching of oxides over metals A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.... | 07/08/2003 |
| 6585825 | Stabilized alkaline compositions for cleaning microelectronic substrates The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) ... | 07/01/2003 |
| 6584989 | Apparatus and method for wet cleaning An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in... | 07/01/2003 |
| 6579812 | Method for removing residual polymer after the dry etching process and reducing oxide loss First of all, a semiconductor substrate that has a memory array and a periphery region thereon is provided, wherein the memory array and the periphery region have a conducted layer, individually. Then an oxide layer or an oxide-nitride-oxide layer is form... | 06/17/2003 |
| 6566315 | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.1-40% wt. nitrogen-containing carboxylic acid or a... | 05/20/2003 |
| 6564812 | Alkanolamine semiconductor process residue removal composition and process A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, prefer... | 05/20/2003 |
| 6562722 | Method and apparatus for dry etching A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and sec... | 05/13/2003 |
| 6562726 | Acid blend for removing etch residue A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of a fluorine source, a non-aqueous solvent, a complementary acid, and a... | 05/13/2003 |
| 6554952 | Method and apparatus for etching a gold metal layer using a titanium hardmask Disclosed is an inventive method for etching a gold metallization in a plasma processing chamber. The method includes introducing a substrate having a gold layer and an overlying titanium hardmask layer into the plasma processing chamber. The hardmask is ... | 04/29/2003 |
| 6554912 | Polymer remover Compositions for the removal of polymeric material from a substrate are provided where the compositions include a polyol compound selected from (C3 -C20)alkanediols, substituted (C3 --C20)alkanediols, (C3 | 04/29/2003 |
| 6546939 | Post clean treatment A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional... | 04/15/2003 |
| 6547978 | Method of heating a semiconductor substrate Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has b... | 04/15/2003 |
| 6541385 | Method for plasma etching of Ir-Ta-O electrode and for post-etch cleaning A method of forming an electrode in an integrated circuit includes preparing a silicon-base substrate, including forming semiconductor structures on the substrate to form an integrated substrate structure; depositing a layer of electrode material on a sub... | 04/01/2003 |
| 6534416 | Control of patterned etching in semiconductor features Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has b... | 03/18/2003 |
| 6526996 | Dry clean method instead of traditional wet clean after metal etch A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing... | 03/04/2003 |
| 6524965 | Cleaning method for semiconductor manufacturing process to prevent metal corrosion A cleaning method for semiconductor manufacturing process. A to-be-cleaned wafer having a metal layer thereon is provided. The wafer is placed into a chemical cleaning equipment unit to clean the wafer surface with a chemical cleaning solution while prote... | 02/25/2003 |
| 6513537 | Substrate processing method and substrate processing apparatus The present invention relates to a method of removing a polymer veil and a metal contamination deposited on a substrate having a metal layer. First, the polymer veils are removed by a chemical liquid in an inert gas atmosphere. Subsequently, the metal con... | 02/04/2003 |
| 6500605 | Removal of photoresist and residue from substrate using supercritical carbon dioxide process A method of removing photoresist and residue from a substrate begins by maintaining supercritical carbon dioxide, an amine, and a solvent in contact with the substrate so that the amine and the solvent at least partially dissolve the photoresist and the r... | 12/31/2002 |
| 6500314 | Plasma etch reactor and method A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the l... | 12/31/2002 |
| 6497992 | Process for manufacturing semiconductor integrated circuit device In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask 54 having a rounded outer perip... | 12/24/2002 |
| 6495383 | Manufacturing method of a thin film transistor A gate electrode is formed on the substrate, and a gate insulating layer is formed over the gate electrode. An amorphous silicon layer and a doped amorphous silicon layer is formed in sequence. On the doped amorphous silicon layer, a source and a drain el... | 12/17/2002 |
| 6492186 | Method for detecting an endpoint for an oxygen free plasma process A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The ox... | 12/10/2002 |
| 6492280 | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls A method and apparatus provide for etching a semiconductor wafer using a two step physical etching and a chemical etching process in order to create vertical sidewalls required for high density DRAMs and FRAMs.... | 12/10/2002 |
| 6492311 | Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process An ethylenediaminetetraacetic acid or a mono- di- tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, prefe... | 12/10/2002 |
| 6489247 | Copper etch using HCl and HBR chemistry Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has b... | 12/03/2002 |
| 6486073 | Method for stripping a photo resist on an aluminum alloy An interconnection pattern made of an aluminum alloy, such as Al--Cu, on a semiconductor IC, is dry etched in an etching gas containing a chlorine component. A photo resist stripping process is carried out at a location down stream of the etching process ... | 11/26/2002 |
| 6482750 | Method of manufacturing semiconductor device including a cleaning step, and semiconductor device manufactured thereby In a process of cleaning a semiconductor substrate on which a polysilicon film serving as a silicon-based member and a tungsten film serving as a tungsten-based member are exposed simultaneously, there is used a cleaning fluid containing a hydroxide, a wa... | 11/19/2002 |
| 6479392 | Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the ... | 11/12/2002 |
| 6475298 | Post-metal etch treatment to prevent corrosion A method of improving the post-etch corrosion resistance of aluminum-containing wafers by performing a two-step post-etch passivation sequence which does not involve a plasma. In the first step the pressure is high, relative to typical passivation procedu... | 11/05/2002 |
