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| Number | Title | Issue Date |
| 7435675 | Method of providing a pre-patterned high-k dielectric film A method of forming a pre-patterned high-k dielectric film onto a support layer. The method includes: providing a support layer; providing a template defining template openings therein exhibiting a pattern that is a mirror image of a pattern of the pre-patterned hig... | 10/14/2008 |
| 7432217 | Method of achieving uniform length of carbon nanotubes (CNTS) and method of manufacturing field emission device (FED) using such CNTS In a method of achieving uniform lengths of Carbon NanoTubes (CNTs) and a method of manufacturing a Field Emission Device (FED) using such CNTs, an organic film is coated to cover CNTs formed on a predetermined material layer. The organic film is etched to a predete... | 10/07/2008 |
| 7432195 | Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio features A method of integrated processing of a patterned substrate for copper metallization. The method includes providing the patterned substrate containing a via and a trench in a vacuum processing tool, and performing an integrated process on the patterned substrate in t... | 10/07/2008 |
| 7432184 | Integrated PVD system using designated PVD chambers A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one l... | 10/07/2008 |
| 7427561 | Method for manufacturing semiconductor device A semiconductor device manufacturing method wherein a metal suicide layer is formed via an in-situ process. The method includes forming a gate electrode on a semiconductor substrate; forming an insulation side wall at either lateral surface of the gate electrode; fo... | 09/23/2008 |
| 7422943 | Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors Capacitors having upper electrodes that include a lower electrode, a dielectric layer and an upper electrode that includes a conductive metal nitride layer and a doped polysilicon germanium layer are provided. At least part of the conductive metal nitride layer is o... | 09/09/2008 |
| 7410877 | Method for manufacturing SIMOX wafer and SIMOX wafer A method for manufacturing a SIMOX wafer includes: heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer to form a... | 08/12/2008 |
| 7405484 | Semiconductor device containing stacked semiconductor chips and manufacturing method thereof An adhesive film is formed on an electrode film, and a coating film is formed thereon. Nickel, chrome, molybdenum, tungsten, aluminum or an alloy of them is used as a constituent material of the adhesive film. Gold, silver, platinum or an alloy of them is used as a ... | 07/29/2008 |
| 7402459 | Quad flat no-lead (QFN) chip package assembly apparatus and method In one embodiment the present invention includes a method of fabricating a quad flat no-lead (QFN) chip package. The method includes forming a stamped lead frame; forming a die pad and a lead shrink on one side of the stamped lead frame; mounting a die on the die pa... | 07/22/2008 |
| 7390678 | Method for fabricating semiconductor device A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOx films having different composition. Su... | 06/24/2008 |
| 7378744 | Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed ove... | 05/27/2008 |
| 7371688 | Removal of transition metal ternary and/or quaternary barrier materials from a substrate A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the ... | 05/13/2008 |
| 7365017 | Method for finishing metal line for semiconductor device A method for finishing a metal line for a semiconductor device is disclosed, in which polymer generated when forming the metal line including aluminum and its alloy is effectively removed and the metal line is prevented from being eroded. A chlorine radical and a ch... | 04/29/2008 |
| 7364956 | Method for manufacturing semiconductor devices A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a pl... | 04/29/2008 |
| 7358612 | Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed ove... | 04/15/2008 |
| 7285471 | Process for transfer of a thin layer formed in a substrate with vacancy clusters Processes for forming semiconductor structure comprising a transfer layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor o... | 10/23/2007 |
| 7282441 | De-fluorination after via etch to preserve passivation Novel interconnect structures possessing a dense OSG material for 90 nm and beyond BEOL technologies in which a low power density oxygen-based de-fluorination plasma process is utilized to increase NBLoK selectivity are presented. These BEOL interconnect structures ... | 10/16/2007 |
| 7279421 | Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors A method and a deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors using CO gas and a dilution gas. The method includes providing a substrate in a process chamber of a processing system, forming a process gas containing a... | 10/09/2007 |
| 7208424 | Method of forming a semiconductor device having a metal layer A metal layer is formed over a metal oxide, where the metal oxide is formed over a semiconductor substrate. A predetermined critical dimension of the metal layer is determined. A first etch is performed to etch the metal layer down to the metal oxide and form footin... | 04/24/2007 |
| 7200067 | Pad arrangement in semiconductor memory device and method of driving semiconductor device A semiconductor memory device comprising control pads and input/output I/O pads capable of reducing the data path for reading and writing data in a cell array, and a method for driving the semiconductor memory device are included. The semiconductor memory device com... | 04/03/2007 |
| 7196020 | Method for PECVD deposition of selected material films A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into th... | 03/27/2007 |
| 6909154 | Sacrificial annealing layer for a semiconductor device and a method of fabrication Numerous embodiments of a method and apparatus for a sacrificial annealing layer are disclosed. In one embodiment, a method of forming a sacrificial annealing layer for a semiconductor device comprises forming one or more sacrificial layers on at least a portion of ... | 06/21/2005 |
| 6699749 | Method for manufacturing a metal-insulator-metal capacitor A method of manufacturing a MIM capacitor having a bottom electrode is provided by forming a metal wire including copper on a substrate. After the metal wire is formed on the substrate, a dielectric film is formed on the metal wire. A top electrode film i... | 03/02/2004 |
| 6700202 | Semiconductor device having reduced oxidation interface A method and apparatus for reducing oxidation of an interface of a semiconductor device thereby improving adhesion of subsequently formed layers and/or devices is disclosed. The semiconductor device has at least a first layer and a second layer wherein th... | 03/02/2004 |
| 6696338 | Method for forming ruthenium storage node of semiconductor device Provided is a method for fabricating a capacitor of a semiconductor; and, more particularly, to a method for forming a Ru storage node of a capacitor that can form a stable storage node. The method includes the steps of: a method for forming a ruthenium (... | 02/24/2004 |
| 6693040 | Method for cleaning the contact area of a metal line A method for cleaning a contact area of a metal line wherein a nitride barrier layer is formed on a sidewall of an insulating interlayer within the contact area by introducing the nitrogen-based radical to the contact area, whereby it is possible to preve... | 02/17/2004 |
| 6692903 | Substrate cleaning apparatus and method A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 ... | 02/17/2004 |
| 6692648 | Method of plasma heating and etching a substrate We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to the preheating of a substrate which includes a material which is to be pattern etched at a tempe... | 02/17/2004 |
| 6686675 | Electronic device and method for producing the same A method for manufacturing an electronic device includes the steps of: forming a base film comprising a material capable of reactive-ion etching with a fluorine-based gas on a substrate; forming a thin film comprising a material capable of reactive-ion et... | 02/03/2004 |
| 6682996 | Method for forming a semiconductor structure using a disposable hardmask A method is provided, which includes patterning a stack of layers spaced below a sacrificial hardmask layer. In some embodiments, the method may include patterning a lower hardmask layer arranged above the stack of layers. Such a patterning process may in... | 01/27/2004 |
| 6682944 | Semiconductor device manufacturing method There is provided a semiconductor device manufacturing method having a ferroelectric or high-dielectric capacitor, which comprises the steps of forming an underlying insulating film over a semiconductor substrate, forming a first conductive film on the un... | 01/27/2004 |
| 6677244 | Specimen surface processing method A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the s... | 01/13/2004 |
| 6673262 | Gas for removing deposit and removal method using same The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can ea... | 01/06/2004 |
| 6673685 | Method of manufacturing semiconductor devices A process for economical and efficient fabrication of gate electrodes no larger than 50 nm, which is beyond the limit of exposure, is characterized by gate-electrode trimming and mask trimming with high resist selectivity which are performed in combinatio... | 01/06/2004 |
| 6670233 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor A process for forming a multilayer film stack including a noble metal electrode and a multilayer barrier. The process includes exposing the film stack to a plasma formed of reactive species from an excitable gas mixture of argon, a chlorine bearing gas, a... | 12/30/2003 |
| 6667208 | Method for manufacturing a capacitor lower electrode over a transistor and a bit line corresponding to a cell area of a semiconductor device Disclosed is method for manufacturing a semiconductor device, wherein a photosensitive layer and a natural oxidation layer on a cell area and a peripheral circuit area are removed by dry etching while a capacitor of a DRAM device is manufactured, and a po... | 12/23/2003 |
| 6660647 | Method for processing surface of sample A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the st... | 12/09/2003 |
| 6656748 | FeRAM capacitor post stack etch clean/repair The present invention is directed to a method of forming an FeRAM integrated circuit, which includes performing a capacitor stack etch to define the FeRAM capacitor. The method comprises etching a PZT ferroelectric layer with a high temperature BCl3 | 12/02/2003 |
| 6656846 | Apparatus for processing samples Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample... | 12/02/2003 |
| 6656850 | Method for in-situ removal of side walls in MOM capacitor formation A method for fabricating an MOM capacitor (10) includes forming a first conductive layer (18) on an insulating support (12, 14), depositing a dielectric film (20) on the conductive layer, and patterning the dielectric film to define the capacitor feature.... | 12/02/2003 |
