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| Number | Title | Issue Date |
| 7439121 | Dielectric film and method of forming it, semiconductor device, non-volatile semiconductor memory device, and production method for semiconductor device In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silic... | 10/21/2008 |
| 7427572 | Method and apparatus for forming silicon nitride film A method for forming a silicon nitride film first deposits a silicon nitride film on a target substrate by CVD in a process field within a reaction container. This step is arranged to supply a first process gas containing a silane family gas and a second process gas... | 09/23/2008 |
| 7408225 | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-... | 08/05/2008 |
| 7358612 | Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed ove... | 04/15/2008 |
| 7348282 | Forming method of gate insulating layer and nitrogen density measuring method thereof A method of forming a gate insulating layer and nitrogen density measuring method thereof, by which a transistor having enhanced electric characteristics can be fabricated without employing separate ion implantation in a manner of providing parameters for enhancing ... | 03/25/2008 |
| 7303952 | Method for fabricating doped polysilicon lines A method of fabricating polysilicon lines and polysilicon gates, the method of including: providing a substrate; forming a dielectric layer on a top surface of the substrate; forming a polysilicon layer on a top surface of the dielectric layer; implanting the polysi... | 12/04/2007 |
| 7291568 | Method for fabricating a nitrided silicon-oxide gate dielectric A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitr... | 11/06/2007 |
| 7259071 | Semiconductor device with dual gate oxides A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and... | 08/21/2007 |
| 7253108 | Process for forming a thin film of TiSiN, in particular for phase change memory devices The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); e... | 08/07/2007 |
| 7214613 | Cross diffusion barrier layer in polysilicon A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of sec... | 05/08/2007 |
| 7183143 | Method for forming nitrided tunnel oxide layer A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal dri... | 02/27/2007 |
| 6677211 | Method for eliminating polysilicon residue A method for eliminating polysilicon residue is provided by converting the polysilicon residue into silicon nitride in two steps. A tilted ion implantation step is performed to implant nitrogen ions into the polysilicon residue to rich nitrogen containing... | 01/13/2004 |
| 6664198 | Method of forming a silicon nitride dielectric layer Methods of forming thin nitride dielectric layers for semiconductor devices are provided. Additionally, methods of forming capacitor structures utilizing thin nitride dielectric layers are provided. The thin nitride layers are formed by nitridizing the su... | 12/16/2003 |
| 6544905 | Metal gate trim process by using self assembled monolayers In a method of forming a metal gate of a semiconductor device, a substrate is provided, which includes a substrate body covered by a dielectric layer. A metal body having top and side surface is provided on the dielectric layer. A self-assembled monolayer... | 04/08/2003 |
| 6524958 | Method of forming channel in thin film transistor using non-ionic excited species In the production of channel etch type bottom gate thin film transistors, etching damage in a channel etch step is prevented to improve the transistor performance. The channel etch is performed using non-ionic excited species, such as hydrogen radicals an... | 02/25/2003 |
| 6500711 | Fabrication method for an interpoly dielectric layer A fabrication method for an interpoly dielectric layer, wherein the method provides a substrate having a first polysilicon layer already formed thereon. An interpoly dielectric layer is then formed on the first polysilicon layer, wherein the interpoly die... | 12/31/2002 |
| 6495477 | Method for forming a nitridized interface on a semiconductor substrate A surface treatment method for forming a fluorine-doped nitridized interface on a semiconductor substrate. The fluorine-doped nitridized interface may be formed using an ammonia plasma CVD process having a treatment gas doped with a fluorine component, su... | 12/17/2002 |
| 6486020 | High pressure reoxidation/anneal of high dielectric constant materials A high dielectric constant (DC) capacitive dielectric film is fabricated in a capacitor structure using relatively high pressure surface treatments. After forming the DC capacitive dielectric film on a supporting bottom plate electrode structure, a surfac... | 11/26/2002 |
| 6251720 | High pressure reoxidation/anneal of high dielectric constant materials A high dielectric constant (HDC) capacitive dielectric film is fabricated in a capacitor structure using relatively high pressure surface treatments. After forming the HDC capacitive dielectric film on a supporting bottom plate electrode structure, a surf... | 06/26/2001 |
| 6238737 | Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby A method of treating structures (and the structure formed thereby), so as to prevent or retard the oxidation of a metal film, and/or prevent its delamination a substrate, includes providing a structure including a refractory metal film formed on a substra... | 05/29/2001 |
| 6207488 | Method for forming a tantalum oxide capacitor using two-step rapid thermal nitridation A method for forming a Ta2 O5 capacitor on a semiconductor device reduces leakage current and increases cell capacitance by utilizing a two-step rapid thermal nitridation (RTN) process to form a nitride layer on a hemi-spherical grai... | 03/27/2001 |
| 6162717 | Method of manufacturing MOS gate utilizing a nitridation reaction A method of forming the gate structure of a MOS device forms a gate structure over a semiconductor substrate and then treats the sidewalls of the gate structure with nitrous oxide plasma so that the silicon and tungsten atoms within the gate structure can... | 12/19/2000 |
| 5843812 | Method of making a PMOSFET in a semiconductor device An improved p+ polysilicon gated PMOSFET having a channel on the surface of a silicon substrate and improved short channel behavior is disclosed. A simplified process allows making a p+ doped gate and source/drain regions at the same time, the transistor ... | 12/01/1998 |
| 5837592 | Method for stabilizing polysilicon resistors A method for stabilizing a polysilicon resistor. Formed through a conventional method upon a semiconductor substrate is a polysilicon resistor. The polysilicon resistor is treated with a nitrogen plasma. After treatment with the nitrogen plasma, the polys... | 11/17/1998 |
| 5665641 | Method to prevent formation of defects during multilayer interconnect processing A process is provided for forming a hard mask over an aluminum-containing layer for patterning and etching the aluminum-containing layer to define interconnects. The process comprises depositing the material comprising the hard mask at a temperature that ... | 09/09/1997 |
| 5445999 | Advanced technique to improve the bonding arrangement on silicon surfaces to promote uniform nitridation The present invention teaches a method for fabricating an ultrathin uniform dielectric layer over a silicon or polysilicon semiconductor substrate. The method entails first providing a substrate having a conductive area into a chamber. Subsequently, the f... | 08/29/1995 |
| 5424253 | Method for manufacturing an inter-layer insulating film A method for manufacturing an inter-layer insulating film (ex. O3, TEOS or NSG) with a superior surface flatness is disclosed to solve the problem that the surface of the inter-layer film formed on a certain under-layer substrate reveals roughn... | 06/13/1995 |
| 5302539 | VLSI interconnect method and structure A local interconnect system for VLSI integrated circuits. During self-aligned silicidation of exposed moat and gate regions in a nitrogen atmosphere, a conductive titanium nitride layer is formed overall. Normally this conductive layer is stripped to avoi... | 04/12/1994 |
| 5236868 | Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system A process is disclosed for forming a layer of titanium nitride on a semiconductor wafer which comprises forming a titanium layer on the wafer in a vacuum deposition chamber in the substantial absence of oxygen-bearing gases; transferring the titanium coat... | 08/17/1993 |
| 5188979 | Method for forming a nitride layer using preheated ammonia A process for forming a titanium nitride barrier layer in semiconductor devices using preheated ammonia reduces susceptibility to junction spiking. In one form of the invention, a substrate having an overlying layer of titanium is heated to a predetermine... | 02/23/1993 |
| 5162262 | Multi-layered interconnection structure for a semiconductor device and manufactured method thereof An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride ... | 11/10/1992 |
| 5103272 | Semiconductor device and a method for manufacturing the same A MOS transistor has a gate electrode, a source region and a drain region formed on a substrate. A titanium silicide film is formed above the gate electrode and the source and drain regions. A titanium nitride layer whose melting point is higher than that... | 04/07/1992 |
| 5065220 | Metal-to-polysilicon capacitor and method for making the same A metal-to-polysilicon capacitor, a floating-gate transistor containing such a capacitor, and a method for making the same is disclosed. The bottom plate of the capacitor is formed over a field oxide structure, and the multilevel dielectric is deposited t... | 11/12/1991 |
| 5049975 | Multi-layered interconnection structure for a semiconductor device An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride ... | 09/17/1991 |
| 5047367 | Process for formation of a self aligned titanium nitride/cobalt silicide bilayer A process for the formation of a titanium nitride/cobalt silicide bilayer for use in semiconductor processing. Titanium and then cobalt are deposited on a silicon substrate by sputter deposition techniques. The substrate is then annealed. During this proc... | 09/10/1991 |
| 5043300 | Single anneal step process for forming titanium silicide on semiconductor wafer An improved process is disclosed for forming a conductive layer of titanium silicide on a silicon semiconductor wafer using a single annealing step which comprises the steps of forming a titanium layer over the wafer in a vacuum deposition chamber in the ... | 08/27/1991 |
| 5010032 | Process for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnects A process for making CMOS device wherein the N-channel devices have n+ gates, and the P-channel devices have p+ gates. A TiN local interconnect system is used to connect the two types of gates, as well as providing connections to moat. A titanium nitride ... | 04/23/1991 |
| 4996081 | Method of forming multiple nitride coating on silicon In an integrated circuit process a composite dielectric layer is formed on a monocrystalline, polycrystalline or amorphous silicon substrate by thermally growing a first silicon nitride layer from a surface layer of the silicon and then depositing a layer... | 02/26/1991 |
| 4990463 | Method of manufacturing capacitor In the invention, the thin natural oxide film formed on a surface of a first polycrystalline silicon layer containing an impurity diffused at a high concentration is transformed into a silicon nitride film by rapid nitriding. When the resultant structure ... | 02/05/1991 |
| 4975756 | SRAM with local interconnect An SRAM using TiN local interconnects. This permits the moat parasitic capacitance to be reduced, and also avoids use of metal jumpers, resulting in increased density.... | 12/04/1990 |
