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| Number | Title | Issue Date |
| 7435678 | Method of depositing noble metal electrode using oxidation-reduction reaction Provided is a method of depositing a noble metal layer using an oxidation-reduction reaction. The method includes flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a reaction chamber; and generating plasma in the reaction chamber to form a ... | 10/14/2008 |
| 7432184 | Integrated PVD system using designated PVD chambers A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one l... | 10/07/2008 |
| 7416980 | Forming a barrier layer in interconnect joints and structures formed thereby Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer. ... | 08/26/2008 |
| 7410900 | Metallisation This invention relates to photosensitive organometallic compounds which are used in the production of metal deposits. In particular, this invention relates to photosensitive organometallic compounds such as bis-(perfluoropropyl)-1,5-cyclooctadiene platinum (II) (i.e... | 08/12/2008 |
| 7384800 | Method of fabricating metal-insulator-metal (MIM) device with stable data retention In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of α-Ta is provided. The Ta of the first electrode is oxidized to form a Ta2O5 layer on the first electrode. A second electrode of β-Ta is provided on the Ta... | 06/10/2008 |
| 7332432 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a do... | 02/19/2008 |
| 7314768 | Formation method of electroconductive pattern, and production method of electron-emitting device, electron source, and image display apparatus using this In regard to an electroconductive pattern including a high resistivity region partially, by forming a pattern with a photosensitive resin, making the pattern absorb liquid containing a metal component, and baking this, an electroconductive film of metal oxide is for... | 01/01/2008 |
| 7306962 | Electroformed metallization A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and sub... | 12/11/2007 |
| 7279417 | Use of metallocenes to inhibit copper oxidation during semiconductor processing Methods for protecting an exposed copper surface of a partially fabricated IC from oxidation during exposure to an oxygen-containing environment are disclosed. The methods involve treating the exposed copper surface with a metallocene compound in order to minimize f... | 10/09/2007 |
| 7271111 | Shadow mask deposition of materials using reconfigurable shadow masks A shadow mask deposition system includes a plurality of identical shadow masks arranged in a number of stacks to form a like number of compound shadow masks, each of which is disposed in a deposition vacuum vessel along with a material deposition source. Materials f... | 09/18/2007 |
| 7265048 | Reduction of copper dewetting by transition metal deposition A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal lay... | 09/04/2007 |
| 7262125 | Method of forming low-resistivity tungsten interconnects Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. ... | 08/28/2007 |
| 7186645 | Selective plating of package terminals In one embodiment, a method including providing a semiconductor pad package having a first pad and a second pad is disclosed. A first layer comprising a first metal is deposited on the first pad using a first process. A second metal is then deposited on the first pa... | 03/06/2007 |
| 7087520 | Method for fabricating metal wiring A semiconductor device includes a semiconductor substrate and metal wiring formed by alternately depositing aluminum layers and copper layers on the semiconductor substrate so that a top layer of the metal wiring is an aluminum layer. The metal wiring is fabricated ... | 08/08/2006 |
| 7078349 | Method to form self-aligned floating gate to diffusion structures in flash A self-aligned conductive region to active region structure is disclosed in which parallel active regions of a semiconductor region of a substrate, which extends to a surface, are separated by STI regions. The STI regions have an insulator liner layer grown over the... | 07/18/2006 |
| 6699789 | Metallization process to reduce stress between Al-Cu layer and titanium nitride layer Embodiments of the present invention are directed to a metallization process for reducing the stress existing between the Al--Cu layer and the titanium nitride (TiN) layer, and solving the galvanic problem. The process does so by cooling the wafer in the ... | 03/02/2004 |
| 6693791 | Ferroelectric capacitor and a method for manufacturing thereof A ferroelectric capacitor including a silicon oxidation layer, a lower electrode, a ferroelectric layer and an upper electrode formed on a silicon substrate. The lower electrode having columnar crystals is made of palladium oxide. Also, the upper electrod... | 02/17/2004 |
| 6690055 | Devices containing platinum-rhodium layers and methods A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula Ly RhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and elec... | 02/10/2004 |
| 6690092 | Multilayer interconnection structure of a semiconductor device In order to solve the aforementioned problems, the present invention provides a semiconductor device having a multilayer interconnection structure, wherein an upper interconnection comprises a first metal layer composed of an aluminum alloy, which is form... | 02/10/2004 |
| 6678951 | Method of forming electrical interconnects having electromigration-inhibiting plugs A method is provided for forming an electrical conductors, comprising forming electrically conductive segments incorporating electromigration-inhibiting plugs. A row of windows is formed in a planar surface and electromigration-inhibiting material is depo... | 01/20/2004 |
| 6660661 | Integrated circuit with improved RC delay In one embodiment, a passivation level includes a low-k dielectric. The low-k dielectric helps lower the capacitance of a metal line in a last metal level, which may be just below the passivation level. In another embodiment, the metal line is relatively ... | 12/09/2003 |
| 6657304 | Conformal barrier liner in an integrated circuit interconnect A manufacturing method, and an integrated circuit resulting therefrom, has a substrate and a semiconductor device thereon. A stop layer over the substrate has a first dielectric layer formed thereon having an opening into which a first conformal barrier i... | 12/02/2003 |
| 6649466 | Method of forming DRAM circuitry In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising l... | 11/18/2003 |
| 6650017 | Electrical wiring of semiconductor device enabling increase in electromigration (EM) lifetime A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The method includes the steps of forming on the silicon substrate a... | 11/18/2003 |
| 6646346 | Integrated circuit metallization using a titanium/aluminum alloy An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in ... | 11/11/2003 |
| 6642619 | System and method for adhesion improvement at an interface between fluorine doped silicon oxide and tantalum A Fluorine doped Silicon Oxide (SiO2)/Tantalum interface and method for manufacturing the same are provided that ensure the structural integrity of integrated circuits that include a Fluorine doped Silicon Oxide structure and a corresponding Ta... | 11/04/2003 |
| 6641867 | Methods for chemical vapor deposition of tungsten on silicon or dielectric In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon wi... | 11/04/2003 |
| 6638580 | Apparatus and a method for forming an alloy layer over a substrate using an ion beam One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamb... | 10/28/2003 |
| 6635570 | PECVD and CVD processes for WNx deposition Improvements to chemical vapor deposition processes are taught for depositing tungsten nitride in semiconductor manufacturing processes. In one irmproved process NF3 is used as a source of nitrogen, and a plasma is introduced under controlled c... | 10/21/2003 |
| 6633057 | Non-volatile semiconductor memory and fabricating method therefor In a non-volatile semiconductor memory having a peripheral circuit zone and a memory zone including plural memory cells each having a floating gate and a control gate, an interlayer insulator is formed over the control gate of the memory cells and a gate ... | 10/14/2003 |
| 6632737 | Method for enhancing the adhesion of a barrier layer to a dielectric A method for chemical vapor deposition comprises providing a thin layer of silicon on the surface of a dielectric-covered substrate prior to depositing a tantalum-based barrier layer from a mixture of a vapor-phase reactant comprising a tantalum halide an... | 10/14/2003 |
| 6627526 | Method for fabricating a conductive structure for a semiconductor device A process for making semiconductor structures, and the resulting highly conductive semiconductor structures, includes using damascene process to form a structure with a thin adhesive layer and overlaying conductive layer. The highly conductive semiconduct... | 09/30/2003 |
| 6623985 | Structure of and manufacturing method for semiconductor device employing ferroelectric substance A semiconductor device and method for manufacturing the same in which the semiconductor device includes a substrate; an MOS transistor formed on the substrate; an interlayer dielectric provided on at least a portion of the MOS transistor; a hydrogen occlu... | 09/23/2003 |
| 6624642 | Metal bridging monitor for etch and CMP endpoint detection Disclosed is a wafer containing a semiconductor substrate, at least one metal layer formed over the semiconductor substrate, and at least one electrical sensor embedded at least one of on and in the wafer to facilitate real time monitoring of the metal la... | 09/23/2003 |
| 6624513 | Semiconductor device with multilayer conductive structure formed on a semiconductor substrate A highly reliable semiconductor device having a multilayer structure including an insulating film, an adjacent conductive film, and a main conductive film in which adhesive fractures, voids and disconnections are unlikely to occur. Regarding main constitu... | 09/23/2003 |
| 6617246 | Semiconductor processing methods and integrated circuitry In aspect, the invention includes a semiconductor processing method including: a) forming an electrically insulative layer over a substrate; b) forming an opening within the electrically insulative layer, the opening having a periphery defined at least in... | 09/09/2003 |
| 6617260 | Method of manufacturing semiconductor device prevented from peeling of wirings from insulating film The present invention provides a manufacturing method of a semiconductor device which does not give rise to peeling of a metal film caused by oxygen held in a interlayer insulating film even when the wafer is subjected to a heat treatment after the metal ... | 09/09/2003 |
| 6617250 | Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising l... | 09/09/2003 |
| 6614116 | Buried digit line stack and process for making same A process of making a buried digit line stack is disclosed. The process includes forming a silicon-lean metal silicide first film over a polysilicon plug, followed by a silicide compound barrier second film. The silicide compound barrier second film is co... | 09/02/2003 |
| 6583049 | Semiconductor integrated circuit device and method for making the same A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first u... | 06/24/2003 |
