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| Number | Title | Issue Date |
| 7341903 | Method of forming a field effect transistor having a stressed channel region A semiconductor structure comprises a transistor element formed in a substrate. A stressed layer is formed over the transistor element. The stressed layer has a predetermined compressive intrinsic stress having an absolute value of about 1 GPa or more. Due to this h... | 03/11/2008 |
| 7335584 | Method of using SACVD deposition and corresponding deposition reactor A method is provided for using SACVD deposition to deposit at least one layer of dielectric material inside a deposition reactor during the fabrication of at least one semiconductor integrated circuit. According to the method, a reaction chamber is provided for carr... | 02/26/2008 |
| 7329591 | Method for forming silicon-containing film and method for decreasing number of particles A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. Durin... | 02/12/2008 |
| 7306983 | Method for forming dual etch stop liner and protective layer in a semiconductor device The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a method for use i... | 12/11/2007 |
| 7297986 | Nitride-based light-emitting device and method of manufacturing the same A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a sin... | 11/20/2007 |
| 7279433 | Deposition and patterning of boron nitride nanotube ILD A method for forming a dielectric layer is disclosed herein. In accordance with the method, a first material is provided (303) which comprises a suspension of nanoparticles in a liquid medium. A dielectric layer is then formed (305) on the substrate fr... | 10/09/2007 |
| 7259071 | Semiconductor device with dual gate oxides A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and... | 08/21/2007 |
| 7160802 | Adhesion of tungsten nitride films to a silicon surface A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers)... | 01/09/2007 |
| 7141500 | Methods for forming aluminum containing films utilizing amino aluminum precursors A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: Al(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R... | 11/28/2006 |
| 6690091 | Damascene structure with reduced capacitance using a boron carbon nitride passivation layer, etch stop layer, and/or cap layer A damascene structure with reduced capacitance dielectric stacking comprise a passivation, a first dielectric, an etch stop, a second dielectric and a cap layer over a first conductive layer formed on a semiconductor. The passivation, the etch stop, and t... | 02/10/2004 |
| 6673713 | Anti-reflective coatings and methods for forming and using same An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of ... | 01/06/2004 |
| 6674146 | Composite dielectric layers An apparatus including a contact point on a substrate; a first dielectric layer comprising a material having a dielectric constant less than five formed on the contact point, and a different second dielectric layer formed on the substrate and separated fr... | 01/06/2004 |
| 6638810 | Tantalum nitride CVD deposition by tantalum oxide densification The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is depos... | 10/28/2003 |
| 6620739 | Method of manufacturing semiconductor device An inorganic insulating film 103 of SiC is formed on a fluorine-containing carbon film 102 by a chemical vapor deposition process using SiF4 and C2 H4 as source gases. By using SiF4 and CF4 containing... | 09/16/2003 |
| 6617173 | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition A technique to form an ultrathin dielectric layer over a ferromagnetic layer by atomic layer deposition.... | 09/09/2003 |
| 6593653 | Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and is effective in preventing the migration or diffusion of metal or copper atoms through the SiCN layer. The SiCN layer can be used as a diffusion barrier between a metal ... | 07/15/2003 |
| 6552388 | Hafnium nitride gate dielectric A field effect semiconductor device comprising a high permittivity hafnium (or hafnium-zirconium) nitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel re... | 04/22/2003 |
| 6544906 | Annealing of high-k dielectric materials A method for annealing a high dielectric constant (high-k) gate dielectric layer includes placing a wafer including one or more partially formed transistors in an ambient. The ambient may include hydrogen and an oxidizing gas or the ambient may include ni... | 04/08/2003 |
| 6537904 | Method for manufacturing a semiconductor device having a fluorine containing carbon inter-layer dielectric film When a semiconductor device using fluorine-containing carbon films (CF films) 21, 22, 23 as inter-layer dielectric films is fabricated using boron nitride films (BN films) as hard masks 31, 32, 33, total inter-wiring capacitance of the semiconductor devic... | 03/25/2003 |
| 6518634 | Strontium nitride or strontium oxynitride gate dielectric A method of forming a capacitor and transistor are disclosed. Initially, a substrate having a semiconductor material on a first surface is provided. A layer of strontium nitride is then deposited over the first surface and a gate electrode formed over the... | 02/11/2003 |
| 6511908 | Method of manufacturing a dual damascene structure using boron nitride as trench etching stop film A method of manufacturing a semiconductor device comprising a wiring formation step including: forming an interlayer insulating film composed of a boron nitride film having a dielectric constant of less than 4 on an (n)-th layer wiring, forming a hole and... | 01/28/2003 |
| 6479173 | Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface ... | 11/12/2002 |
| 6472751 | H2 diffusion barrier formation by nitrogen incorporation in oxide layer A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-contain... | 10/29/2002 |
| 6458255 | Ultra-low resistivity tantalum films and methods for their deposition We have discovered that, by depositing a tantalum layer upon a substrate at a temperature of at least 325° C., it is possible to obtain an ultra low resistivity which is lower than that previously published in the literature. In addition, it is possible ... | 10/01/2002 |
| 6444568 | Method of forming a copper diffusion barrier A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and is effective in preventing the migration or diffusion of metal or copper atoms through the SiCN layer. The SiCN layer can be used as a diffusion barrier between a metal ... | 09/03/2002 |
| 6436801 | Hafnium nitride gate dielectric A field effect semiconductor device comprising a high permittivity hafnium (or hafnium-zirconium) nitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel re... | 08/20/2002 |
| 6432848 | Process for formation of cap layer for semiconductor A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabil... | 08/13/2002 |
| 6420092 | Low dielectric constant nanotube A low dielectric constant nanotube, which can be used in the damascene process, and the fabrication method for a non-selective and a selective nanotube thin film layer are described. The non-selective deposition of the nanotube thin film layer includes fo... | 07/16/2002 |
| 6376305 | Method of forming DRAM circuitry, DRAM circuitry, method of forming a field emission device, and field emission device The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device. In one aspect, a met... | 04/23/2002 |
| 6355548 | Method for manufacturing a gate structure incorporated therein a high K dielectric A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. An AlN layer is formed on top of the semiconductor substrate and annealed in the presence of oxygen gas to convert into a... | 03/12/2002 |
| 6352944 | Method of depositing an aluminum nitride comprising layer over a semiconductor substrate The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device. In one aspect, a met... | 03/05/2002 |
| 6319766 | Method of tantalum nitride deposition by tantalum oxide densification The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is depos... | 11/20/2001 |
| 6291319 | Method for fabricating a semiconductor structure having a stable crystalline interface with silicon A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, nitrogen, an... | 09/18/2001 |
| 6287910 | Method for forming a capacitor using tantalum nitride as a capacitor dielectric A method for fabricating capacitors for semiconductor devices utilizing a Ta3 N5 dielectric layer is provided by the present invention. This method includes the steps of forming a lower electrode on a semiconductor substrate, deposit... | 09/11/2001 |
| 6194328 | H2 diffusion barrier formation by nitrogen incorporation in oxide layer A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-contain... | 02/27/2001 |
| 6165891 | Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer A method and structure for forming a damascene structure with reduced capacitance by forming one or more of: the passivation layer, the etch stop layer, and the cap layer using a low dielectric constant material comprising carbon nitride, boron nitride, o... | 12/26/2000 |
| 6096174 | Apparatus for coating a substrate with thin layers An apparatus is provided for coating a substrate (24) with thin layers from targets (12, 13) between which a gas discharge plasma is sustained in order to produce the ions necessary for the bombardment of the targets (12, 13) connected to alternating curr... | 08/01/2000 |
| 6093952 | Higher power gallium nitride schottky rectifier A Schottky high power rectifier having a nitride insulator formed on the surface of a GaN substrate. The nitride insulator increases the electric field breakdown suppression at or near the surface of the rectifier below the insulator. In a preferred embod... | 07/25/2000 |
| 6046096 | Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure A method of fabricating a compound semiconductor layer structure including a layer containing nitrogen is provided. In a method of fabricating a device including a compound semiconductor layer structure, a portion of crystal of compound semiconductor, whi... | 04/04/2000 |
| 5858870 | Methods for gap fill and planarization of intermetal dielectrics An improved method of gap filling and planarization in the dielectric layer by combining an anti-reflective coating with a CMP etch stop is described. Semiconductor device structures are provided in and on a semiconductor substrate. A conducting layer is ... | 01/12/1999 |
