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| Number | Title | Issue Date |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7393727 | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulat... | 07/01/2008 |
| 7387648 | Solid electrolytic capacitor and manufacturing method thereof The invention relates to a coil type solid electrolytic capacitor containing solid organic polymer with high electrical conductivity as electrolyte and its manufacturing method. In the invention, such processes as oxidation, carbonization, immersing, chemical oxypol... | 06/17/2008 |
| 7371674 | Nanostructure-based package interconnect An embodiment of the present invention is an interconnect technique. A nanostructure bump is formed on a die. The nanostructure bump has a template defining nano-sized openings and metallic nano-wires extending from the nano-sized openings. The die is attached to a ... | 05/13/2008 |
| 7368331 | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an isolati... | 05/06/2008 |
| 7335538 | Method for manufacturing bottom substrate of liquid crystal display device A method for manufacturing liquid crystal display substrates comprises the steps of: (a) providing a substrate having a transparent electrode layer and a metal layer; (b) forming a patterned photoresist layer through half-tone or diffraction; (c) defining signal lin... | 02/26/2008 |
| 7129183 | Method of forming grating microstrutures by anodic oxidation A method of manufacturing an element having a microstructure of an excellent grating groove pattern or the like is obtained. This method of manufacturing an element having a microstructure comprises steps of forming a metal layer on a substrate, forming a dot column... | 10/31/2006 |
| 6660610 | Devices having improved capacitance and methods of their fabrication A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate... | 12/09/2003 |
| 6613641 | Production of metal insulator metal (MIM) structures using anodizing process Metal-insulator-metal capacitor structures are formed in semiconductor substrates using an anodization procedure on deposited underlying metalization followed by deposition of the second metal and planarization by chemical-mechanical polishing or other pr... | 09/02/2003 |
| 6387771 | Low temperature oxidation of conductive layers for semiconductor fabrication A method for forming a valve metal oxide for semiconductor fabrication in accordance with the present invention is disclosed and claimed. The method includes the steps of providing a semiconductor wafer, depositing a valve metal on the wafer, placing the ... | 05/14/2002 |
| 6326246 | Method for manufacturing thin film transistor In a thin film transistor (TFT), a part of a surface or a whole surface of aluminum used as a gate electrode is covered by anodic oxide. In a process after anodization process, ultraviolet light is irradiated to a gate electrode in an oxidizing atmosphere... | 12/04/2001 |
| 6319616 | Scaled interconnect anodization for high frequency applications A method of forming a conductive line structure is provided. An adhesion layer is formed on a substrate surface. A seed layer is formed on the adhesion layer. A conductor is formed on the seed layer to form a partially complete structure. The partially co... | 11/20/2001 |
| 6075691 | Thin film capacitors and process for making them A thin film capacitor for use in semiconductor integrated circuit devices such as analog circuits, rf circuits, and dynamic random access memories (DRAMs), and a method for its fabrication, is disclosed. The capacitor has a dielectric thickness less than ... | 06/13/2000 |
| 6069070 | Multilevel interconnections of electronic components A process for forming an electronic component carrier, the electronic carrier having routing layers parallel to an aluminum substrate and vias perpendicular to the aluminum substrate, the process comprising defining routing layers by forming a blocking ma... | 05/30/2000 |
| 6049092 | Semiconductor device and method for manufacturing the same A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region havi... | 04/11/2000 |
| 6033982 | Scaled interconnect anodization for high frequency applications A method of forming a conductive line structure is provided. An adhesion layer is formed on a substrate surface. A seed layer is formed on the adhesion layer. A conductor is formed on the seed layer to form a partially complete structure. The partially co... | 03/07/2000 |
| 5970326 | Thin film transistor films made with anodized film and reverse-anodized etching technique Anodising treatments are used to form insulating films (12) in the manufacture of a flat-panel display or other large-area thin-film electronic device. A first film (1,101) of anodisable material (e.g Al) is anodised through a part of its thickness to for... | 10/19/1999 |
| 5936831 | Thin film tantalum oxide capacitors and resulting product In accordance with the invention, a thin film capacitor including a dielectric of nitrogen or silicon-doped tantalum oxide and at least one electrode including chromium. Preferably the capacitor is fabricated by anodically oxidizing TaNx or Ta | 08/10/1999 |
| 5880021 | Method of making multilevel interconnections of electronic parts A process for forming a multilevel electronic interconnect structure, the electronic interconnect structure having level conductive paths parallel to a substrate and interlevel electrical interconnections perpendicular to the substrate, the process compri... | 03/09/1999 |
| 5811326 | Method for manufacturing thin film transistor In a thin film transistor (TFT), a part of a surface or a whole surface of aluminum used as a gate electrode is covered by anodic oxide. In a process after anodization process, ultraviolet light is irradiated to a gate electrode in an oxidizing atmosphere... | 09/22/1998 |
| 5733661 | High-permittivity composite oxide film and uses thereof A composite oxide film which comprises at least one oxide of a metal selected from the group consisting of Al, Ti, Zr, Hf, Nb, and Ta, said oxide containing ions of an organic carboxylic acid salt and/or ions of an inorganic oxoacid salt.... | 03/31/1998 |
| 5681439 | Configuration of an anode-oxidation preventing portion of a metal line A specially configured intermediate structure used in a stage of selective anodization during the manufacture of a circuit. The specially configured intermediate structure includes: a metal line having at least two edges; and a photoresist mask applied ov... | 10/28/1997 |
| 5580825 | Process for making multilevel interconnections of electronic components A process for forming a multilevel electronic interconnect structure, the electronic interconnect structure having level conductive paths parallel to a substrate and interlevel electrical interconnections perpendicular to the substrate, the process compri... | 12/03/1996 |
| 5418636 | Liquid crystal image display apparatus with anodized films of the same thickness and a method of fabricating the same A liquid crystal image display device is disclosed of a type comprising a first transparent insulating substrate having a plurality of scanning line, a plurality of signal lines and an insulated-gate transistor for each pixel and a pixel electrode for eac... | 05/23/1995 |
| 5334544 | Method of making thin film transistors A method of making thin film transistors such that the first conductive layer of a thin film transistor is formed with an aluminum system metal having a low electric resistance, and another metal capable of anodic oxidation is deposited to prevent the alu... | 08/02/1994 |
| 5306668 | Method of fabricating metal-electrode in semiconductor device A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming and patterning a first metal layer, which is not anodizable, to a first predeterm... | 04/26/1994 |
| 5240868 | Method of fabrication metal-electrode in semiconductor device A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming a first metal layer, which is anodizable, to a first predetermined thickness on a... | 08/31/1993 |
| 5202274 | Method of fabricating thin film transistor A method of fabricating a thin film transistor wherein electrode wirings and an insulating layer are fabricated by depositing on a substrate an aluminum alloy layer to become electrode wiring. An Al2 O3 layer having a given thickness... | 04/13/1993 |
| 4905066 | Thin-film transistor A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer includ... | 02/27/1990 |
| 4761211 | Method of improving the electrical characteristics of a thin film A method of improving the electrical characteristics of a thin film (1 or 9) formed on a substrate (3 or 11) by a Langmuir-Blodgett process. The method comprises immersing the film (1 or 9) in a fluid (5 or 13) and applying an electrical potential to the ... | 08/02/1988 |
| 4749454 | Method of removing electrical shorts and shunts from a thin-film semiconductor device A method of removing electrical shorts and shunts from a thin-film semiconductor device having pairs of electrodes with exposed contact surfaces wherein each pair of electrodes is separated by a semiconductor film. The disclosed method comprises the steps... | 06/07/1988 |
| 4681666 | Planarization of a layer of metal and anodic aluminum A planarization method of fabricating a layer of metal conductors embedded in a dielectric level. A coating of aluminum is anodized from the top but leaving a thickness of unanodized aluminum on the bottom. The top is masked and etched to provide a predet... | 07/21/1987 |
| 4561009 | Semiconductor device A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected fr... | 12/24/1985 |
| 4542579 | Method for forming aluminum oxide dielectric isolation in integrated circuits In the fabrication of integrated circuits, a method is provided for forming dielectrically isolated regions in a semiconductor substrate comprising forming over the semiconductor substrate surface an electrically insulating layer of dielectric material ha... | 09/24/1985 |
| 4524378 | Anodizable metallic contacts to mercury cadmium telleride Metallic contacts to compound semiconductor devices which employ a native oxide for passivation are provided. The metallic contacts of the invention comprise at least two metal layers: a first layer making non-rectifying contact with the semiconductor sur... | 06/18/1985 |
| 4514254 | Groundplane post-etch anodization Pinholes opened though insulating layers in Josephson integrated circuits are sealed by this post-etch anodization process. Josephson junction integrated circuits, in part, contain patterned metal films on an insulated groundplane. The patterns of conduct... | 04/30/1985 |
| 4433004 | Semiconductor device and a method for manufacturing the same A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected fr... | 02/21/1984 |
| 4297176 | Surface passivation of compound semiconductors A compound semiconductor whose elements are differently volatile (e.g. GaAs, where As is more volatile than Ga) can be surface-passivated (a Ga layer overlying GaAs) by the steps of (a) anodizing a compound semiconductor to produce a layer thereon of nati... | 10/27/1981 |
| 4261792 | Method for fabrication of semiconductor devices A metallization or conductor or semiconductor layer formed over one major surface of a semiconductor wafer subjected to anodizing to form an anodized coating which has excellent adherence to the conductor or semiconductor layer and which is used as an etc... | 04/14/1981 |
| 4242791 | High performance bipolar transistors fabricated by post emitter base implantation process Disclosed is a method for fabricating very high performance semiconductor devices, particularly bipolar-type transistors having a heavily doped inactive base and a lightly doped narrow active base formed by ion implantation. In order to prevent the high d... | 01/06/1981 |
