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| Number | Title | Issue Date |
| 7393727 | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulat... | 07/01/2008 |
| 7378341 | Automatic process control of after-etch-inspection critical dimension Automatic process control of after-etch-inspection critical dimension. A dielectric layer is deposited over a substrate and is then planarized to a first thickness. A cap oxide layer having a second thickness is deposited, wherein the combination of the first thickn... | 05/27/2008 |
| 7335538 | Method for manufacturing bottom substrate of liquid crystal display device A method for manufacturing liquid crystal display substrates comprises the steps of: (a) providing a substrate having a transparent electrode layer and a metal layer; (b) forming a patterned photoresist layer through half-tone or diffraction; (c) defining signal lin... | 02/26/2008 |
| 7320943 | Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same Disclosed is a capacitor with a dielectric layer having a low equivalent oxide thickness compared to a HfO2 layer and capable of decreasing a level of a leakage current incidence and a method for fabricating the same. Particularly, the capacitor includes:... | 01/22/2008 |
| 7312152 | Lactate-containing corrosion inhibitor The corrosion of aluminum-based metal films may be minimized by applying a lactate-containing solution to the aluminum-based metal films before the aluminum-based metal films are etched. The lactate-containing solution is applied to the aluminum-based metal film bef... | 12/25/2007 |
| 7304004 | System and method for forming a gate dielectric A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionize... | 12/04/2007 |
| 7235448 | Dielectric layer forming method and devices formed therewith Embodiments in accordance with the present invention provide alternative materials, and methods of forming such materials, that are effective as dielectric layers. Such embodiments include forming metal-containing dielectric layers over a silicon-containing substrat... | 06/26/2007 |
| 7220647 | Method of cleaning wafer and method of manufacturing gate structure A method of cleaning a wafer, adapted for a patterned gate structure. The gate structures comprise a gate dielectric layer, a nitrogen-containing barrier layer and a silicon-containing gate layer sequentially stacked over the substrate. The method includes cleaning ... | 05/22/2007 |
| 7217661 | Small grain size, conformal aluminum interconnects and method for their formation A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mi... | 05/15/2007 |
| 7189647 | Sequential station tool for wet processing of semiconductor wafers Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wa... | 03/13/2007 |
| 7169673 | Atomic layer deposited nanolaminates of HfO/ZrOfilms as gate dielectrics A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is ... | 01/30/2007 |
| 7144783 | Reducing gate dielectric material to form a metal gate electrode extension In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have vertical portions that may be exposed to a reduction reaction. As a result of the reduction reaction, the vertical portions may be converted to metal, which adds to the existing g... | 12/05/2006 |
| 7132360 | Method for treating a semiconductor surface to form a metal-containing layer A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semicondu... | 11/07/2006 |
| 6699747 | Method for increasing the capacitance in a storage trench In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over th... | 03/02/2004 |
| 6683001 | Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is pretreated at a first temperature so that an upper surface of the... | 01/27/2004 |
| 6680130 | High K dielectric material and method of making a high K dielectric material A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric mater... | 01/20/2004 |
| 6677607 | Organic semiconductor device having an oxide layer A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partial... | 01/13/2004 |
| 6670231 | Method of forming a dielectric layer in a semiconductor device Semiconductor devices that utilize a silicon-containing dielectric layer are disclosed. In one embodiment, a silicon-containing material is deposited on a substrate. The deposited material is processed with a reactive agent to react with silicon atoms of ... | 12/30/2003 |
| 6664186 | Method of film deposition, and fabrication of structures A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vap... | 12/16/2003 |
| 6661058 | Highly reliable gate oxide and method of fabrication An ultra-thin gate oxide layer of hafnium oxide (HfO2) and a method of formation are disclosed. The ultra-thin gate oxide layer of hafnium oxide (HfO2) is formed by a two-step process. A thin hafnium (Hf) film is first formed by ther... | 12/09/2003 |
| 6657299 | Semiconductor with a stress reduction layer and manufacturing method therefor A surface of a metal wiring formed over a portion of a substrate is oxidized and annealed to generate a stress reduction layer. Then a passsivation layer is deposited over the stress reduction layer and the remaining portions of the substrate so that a se... | 12/02/2003 |
| 6646298 | Capacitor with oxygenated metal electrodes and high dielectric constant materials A stabilized capacitor using high dielectric constant dielectric materials, such as Ta2 O5 and Bax Sr.sub.(1-x) TiO3, and methods of making such capacitors are provided. A preferred method includes chemical vapo... | 11/11/2003 |
| 6645805 | Method for forming dielectric film of capacitor A method for forming a dielectric film of a capacitor includes injecting a first source containing a first component into a reaction chamber to be adsorbed on a surface of a substrate, purging residual first source out of the reaction chamber, injecting a... | 11/11/2003 |
| 6645807 | Method for manufacturing semiconductor device After a metal layer is formed on a dielectric film, the metal layer is subjected to an oxidation process using a liquid having oxidizing power, thereby forming an adhesion layer. Then, an electrode or wiring is formed on the adhesion layer.... | 11/11/2003 |
| 6642100 | Semiconductor device with capacitor structure having hydrogen barrier layer and method for the manufacture thereof A semiconductor device for use in a memory cell including an active matrix provided with a transistor and a first insulating layer formed around the transistor; a capacitor structure, formed on top of the first insulating layer and composed of a bottom el... | 11/04/2003 |
| 6639267 | Capacitor dielectric having perovskite-type crystalline structure A capacitor construction includes an inner electrode, an inner dielectric layer over the inner electrode, an outer dielectric layer over the inner dielectric layer, and an outer electrode over the outer dielectric layer. The inner dielectric layer can inc... | 10/28/2003 |
| 6635571 | Process for forming aluminum or aluminum oxide thin film on substrates Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing ... | 10/21/2003 |
| 6620713 | Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication Method of fabricating a semiconductor device. The semiconductor device comprises a substrate, a high-k gate dielectric layer formed on the substrate, and a hydrogen-free gate electrode deposited on the high-k gate dielectric layer wherein the hydrogen-fre... | 09/16/2003 |
| 6620670 | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2 O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an... | 09/16/2003 |
| 6608383 | Semiconductor device including capacitor with lower electrode including iridium and iridium oxide layers A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical c... | 08/19/2003 |
| 6583021 | Method of fabricating capacitor having hafnium oxide Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti1-x Hfx N layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti1-x Hfx... | 06/24/2003 |
| 6551873 | Method for forming a tantalum oxide capacitor A method for forming capacitor using a tantalum oxide (TaO5) layer is disclosed. Tantalum oxide is deposited by an atomic layer deposition ALD process so that the step-coverage of the tantalum oxide layer is improved, and accordingly the electr... | 04/22/2003 |
| 6544886 | Process for isolating an exposed conducting surface A method of isolating an exposed conductive surface. An aluminum layer (130) is selectively formed over the exposed conductive (106) surface (e.g., Cu) but not over the surrounding dielectric (110) surface using a thermal CVD process. The aluminum layer (... | 04/08/2003 |
| 6534401 | Method for selectively oxidizing a silicon/metal composite film stack A method of selectively oxidizing a composite film. According to the present invention a substrate of having a composite film comprising of lower silicon film, a barrier layer, and upper metal film on the barrier layer is placed into a reaction chamber. A... | 03/18/2003 |
| 6534420 | Methods for forming dielectric materials and methods for forming semiconductor devices Embodiments in accordance with the present invention provide methods of forming such dielectric materials, dielectric material layers and various semiconductor devices that employ such materials and layers. In general, embodiments of the present invention... | 03/18/2003 |
| 6524651 | Oxidized film structure and method of making epitaxial metal oxide structure A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of provid... | 02/25/2003 |
| 6521911 | High dielectric constant metal silicates formed by controlled metal-surface reactions A method of forming an insulation layer on a semiconductor substrate includes modifying a surface of a semiconductor substrate with a metal or a metal-containing compound and oxygen to form an insulation layer on the surface of the semiconductor substrate... | 02/18/2003 |
| 6498107 | Interface control for film deposition by gas-cluster ion-beam processing Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it iner... | 12/24/2002 |
| 6492242 | Method of forming of high K metallic dielectric layer A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding ... | 12/10/2002 |
| 6465334 | Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are fabric... | 10/15/2002 |
