Class 257/E21.285 - Of silicon (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.284. This
No. of patents: 331
Last issue date: 04/22/2008

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Number	Title	Issue Date
7361613	Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ...	04/22/2008
7332448	Manufacturing method of semiconductor device and semiconductor manufacturing device A manufacturing method of a semiconductor device, comprises; a process of heat-treating a semiconductor substrate under the ordinary pressure and in an oxidizing atmosphere; and a process of heat-treating the semiconductor substrate under the ordinary pressure and i...	02/19/2008
7304002	Method of oxidizing member to be treated A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidatio...	12/04/2007
7282457	Apparatus for stabilizing high pressure oxidation of a semiconductor device A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O a...	10/16/2007
7208357	Template layer formation A process for forming a strained semiconductor layer. The process includes implanting ions into a semiconductor layer prior to performing a condensation process on the layer. The ions assist in diffusion of atoms (e.g. germanium) in the semiconductor layer and to in...	04/24/2007
7192887	Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same A method of manufacturing a MOS transistor is provided that achieves high-speed devices by reducing nitrogen diffusion to a silicon substrate interface due to redistribution of nitrogen and further suppressing its diffusion to a polysilicon interface, which prevents...	03/20/2007
7141514	Selective plasma re-oxidation process using pulsed RF source power A transistor gate selective re-oxidation process includes the steps of introducing into the vacuum chamber containing the semiconductor substrate a process gas that includes oxygen while maintaining a vacuum pressure in the chamber. An oxide insulating layer on the ...	11/28/2006
7109131	System and method for hydrogen-rich selective oxidation The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich ox...	09/19/2006
RE38674	Process for forming a thin oxide layer A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is...	12/21/2004
6699796	Single chip pad oxide layer growth process A single chip pad oxide layer growth process is disclosed. First, a silicon chip is sent into a reaction chamber, which is filled with hydrogen and oxygen. A rapid thermal process is employed to increase the temperature inside the chamber to about 850° C...	03/02/2004
6682973	Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfa...	01/27/2004
6680261	Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layer Embodiments of the present invention are directed to a method of reducing boron outgassing at trench power IC's oxidation process for the sacrificial oxide layer whereby the threshold voltage of the power ICs can be improved and the yield of the product c...	01/20/2004
6670242	Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer A method for making an integrated circuit device includes forming source and drain regions in a semiconductor substrate and defining a channel region therebetween, forming a graded, grown, gate oxide layer adjacent the channel region, forming a nitride la...	12/30/2003
6669825	Method of forming a dielectric film A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals...	12/30/2003
6653182	Process for forming deep and shallow insulative regions of an integrated circuit Prior fabricating the transistors, a phase of forming a deep insulative trench in the substrate is followed by a phase of forming a shallow insulative trench in the substrate and extending the deep trench. The phase of forming the deep trench includes coa...	11/25/2003
6649538	Method for plasma treating and plasma nitriding gate oxides A method for forming a nitrided gate oxide over a silicon substrate in a semiconductor device fabrication process including providing a silicon semiconductor substrate; thermally growing a gate oxide layer including silicon dioxide over the silicon substr...	11/18/2003
6649535	Method for ultra-thin gate oxide growth A method for forming an ultra-thin (between about 15 to 20 Angstroms), silicon dioxide gate insulator layer, featuring a process sequence which widens the process window of the thermal oxidation procedure, and improves the quality of the ultra-thin silico...	11/18/2003
6649537	Intermittent pulsed oxidation process The present invention provides a method of forming a dielectric on a semiconductor substrate. A dielectric is grown at a substrate interface in a plurality of increments. Stress is relieved at the dielectric substrate interface between each increment. In ...	11/18/2003
6642117	Method for forming composite dielectric layer A method for forming a dielectric layer provides that a oxidizable substrate has formed thereupon a thermal oxide layer in turn having formed thereupon a deposited nitride layer. The deposited nitride/thermal oxide stack layer is then sequentially: (1) an...	11/04/2003
6639267	Capacitor dielectric having perovskite-type crystalline structure A capacitor construction includes an inner electrode, an inner dielectric layer over the inner electrode, an outer dielectric layer over the inner dielectric layer, and an outer electrode over the outer dielectric layer. The inner dielectric layer can inc...	10/28/2003
6638819	Method for fabricating interfacial oxide in a transistor and related structure A gas is supplied at a certain partial pressure for a chemical reaction with a top surface of a base in a transistor. The top surface of the base is heated to a certain temperature to promote the chemical reaction. For example, the gas can be oxygen, the ...	10/28/2003
6639228	Method for molecular nitrogen implantation dosage monitoring A method for estimating molecular nitrogen implantation dosage. The semiconductor wafers are first implanted with various concentration of molecular nitrogen. After implantation, the implanted wafers and a non-implanted wafer are subjected to thermal proc...	10/28/2003
6627501	Method of forming tunnel oxide layer A method of forming a tunnel oxide layer is disclosed. The method of the present invention uses the rapid thermal process (RTP) rather than the conventional furnace process. The silicon dioxide (SiO2) film served as the tunnel oxide layer is fo...	09/30/2003
6620744	Insulating film formation method, semiconductor device, and production apparatus A method for forming an insulator film at a semiconductor temperature of 600° C. or less comprises the steps of forming a first insulator film by oxidizing a surface of a semiconductor in an atmosphere containing oxygen atom radicals, and forming a secon...	09/16/2003
6617207	Method and system for forming a stacked gate insulating film A stacked gate insulating film comprises a silicon oxide film and a tantalum oxide film which is stacked on the silicon oxide film and whose dielectric constant is higher than a dielectric constant of the silicon oxide film. The stacked gate insulating fi...	09/09/2003
6610613	Method for fabricating thin insulating films, a semiconductor device and a method for fabricating a semiconductor device The invention grows SiO2 and silicon nitride films over silicon at temperatures in a range of room temperature to 700° C. The lower temperature oxidation is made possible by creation of reactive oxygen species and by supplying photon energy, i...	08/26/2003
6607946	Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2 O) and ozone (O3). The presence of O3 in the oxidizing...	08/19/2003
6602799	Method of forming a uniform ultra-thin gate oxide layer A method of forming a highly uniform ultra-thin insulating gate oxide layer on a silicon wafer is presented where an oxide layer non-uniformity introduced at a processing temperature is compensated during a cooling step during which oxygen is added to giv...	08/05/2003
6599845	Oxidizing method and oxidation system An oxidation method of oxidizing surfaces of workpieces heated at a predetermined temperature in a vacuum atmosphere in a processing vessel produces active hydroxyl and active oxygen species. The active hydroxyl and active oxygen species oxidize the surfa...	07/29/2003
6596651	Method for stabilizing high pressure oxidation of a semiconductor device A method and apparatus for preventing N2 O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N	07/22/2003
6564743	Method for forming oxide film of semiconductor device, and oxide film forming apparatus capable of shortening pre-processing time for concentration measurement In an oxide film forming apparatus for a semiconductor device preprocessing time to measure concentration can be greatly shortened, and the oxide film can be formed with supreme reproducibility in stable manufacturing stages. The oxide film forming appara...	05/20/2003
6566199	Method and system for forming film, semiconductor device and fabrication method thereof An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substr...	05/20/2003
6551946	TWO-STEP OXIDATION PROCESS FOR OXIDIZING A SILICON SUBSTRATE WHEREIN THE FIRST STEP IS CARRIED OUT AT A TEMPERATURE BELOW THE VISCOELASTIC TEMPERATURE OF SILICON DIOXIDE AND THE SECOND STEP IS CARRIED OUT AT A TEMPERATURE ABOVE THE VISCOELASTIC TEMPERATURE A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. T...	04/22/2003
6551948	Flash memory device and a fabrication process thereof, method of forming a dielectric film A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridatio...	04/22/2003
6541393	Method for fabricating semiconductor device A semiconductor device is fabricated by a method comprising the steps of: selectively introducing a halogen element or argon into a device region 14 of a silicon substrate 10; and wet oxidizing the silicon substrate 10 in an ambient atmosphere which an H	04/01/2003
6541394	Method of making a graded grown, high quality oxide layer for a semiconductor device A method for making an oxide layer on a silicon substrate produces an oxide layer including graded portions with greatly reduced stress. The method includes growing a first oxide portion over a substrate by upwardly ramping the substrate to a first temper...	04/01/2003
6537926	Process for improving the thickness uniformity of a thin oxide layer in semiconductor wafer fabrication A two-step progressive thermal oxidation process is provided to improve the thickness uniformity of a thin oxide layer in semiconductor wafer fabrication. A semiconductor wafer, e.g., of silicon, with a surface subject to formation of an oxide layer there...	03/25/2003
6534363	High voltage oxidation method for highly reliable flash memory devices A method for forming a high voltage gate oxide having a high quality and reliability for use with non-volatile memory devices is provided. Field oxide isolation regions are formed in the top surface of a semiconductor substrate so as to define a first act...	03/18/2003
6534421	Method to fabricate thin insulating film The invention grows SiO2 films over silicon at temperatures as low as room temperature and at pressures as high as 1 atmosphere. The lower temperature oxidation is made possible by creation of oxygen atoms and radicals by adding noble gas(es) a...	03/18/2003
6524910	Method of forming dual thickness gate dielectric structures via use of silicon nitride layers A process for forming a first group of gate structures, designed to operate at a lower voltage than a simultaneously formed second group of gate structures, has been developed. The process features the thermal growth of a first silicon dioxide gate insula...	02/25/2003

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Class 257/E21.285 - Of silicon (EPO)