Class 257/E21.283 - Of semiconductor material, e.g., by oxidation of semiconductor body itself (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.282. This
No. of patents: 67
Last issue date: 04/08/2008

«First «Previous1 2 Next»Last»

Number	Title	Issue Date
7354785	Electroluminescent light emitting device An electroluminescent device having a light emitting layer (25) containing phosphor particles (31, 32), wherein the phosphor particles protrude from the light emitting layer to cause the surrounding layers to conform to the protrusions, thus increasing...	04/08/2008
7304002	Method of oxidizing member to be treated A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidatio...	12/04/2007
7122488	High density plasma process for the formation of silicon dioxide on silicon carbide substrates Methods are provided for forming silicon dioxide (SiO2) on a silicon carbide (SiC) substrate. The method comprises: providing a SiC substrate; supplying an atmosphere including oxygen; performing a high-density (HD) plasma-based process; and, forming a SiO2 layer ov...	10/17/2006
7087499	Integrated antifuse structure for FINFET and CMOS devices A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise. A region of semiconducting material (11) is provided overlying an insulator (3) disposed on a subst...	08/08/2006
6617206	Method of forming a capacitor structure A capacitor structure and method of forming it are described. In particular, a high-K dielectric oxide is provided as the capacitor dielectric. The high-K dielectric is deposited in a series of thin layers and oxidized in a series of oxidation steps, as o...	09/09/2003
6500735	Semiconductor device and method of manufacturing the same There is disclosed a method of manufacturing a semiconductor device, wherein a semiconductor layer having an acute projection containing polycrystalline silicon is formed on a substrate, and then, an insulating layer is formed on the semiconductor layer t...	12/31/2002
6303499	Process for preparing semiconductor device A process for preparing a semiconductor device includes a step of surface-modifying a desired portion of the surface of a substrate carried out in an atmosphere containing oxygen or nitrogen atoms. The process also includes a step of depositing selectivel...	10/16/2001
6221788	Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate The semiconductor of the present invention comprises at least an oxide film and a metal thin film on the surface of the semiconductor. The metal thin film includes a metal serving as an oxidation catalyst and has a thickness in the range of 0.5-30 nm. The...	04/24/2001
6140247	Semiconductor device manufacturing method A semiconductor device manufacturing method includes the step of forming a silicon oxide film on the surface of a silicon region, and the step of supplying anhydrous hydrofluoric acid gas to the silicon oxide film, thereby removing the silicon oxide film....	10/31/2000
5972802	Prevention of edge stain in silicon wafers by ozone dipping A method of preventing edge stain in silicon wafers from the edge polishing step with an alkaline slurry, the method consisting of formation of an oxide layer by an ozone dipping step prior to edge polishing....	10/26/1999
5958519	Method for forming oxide film on III-V substrate A method is provided for forming an oxide film on a III-V substrate. The method includes steps of (a) preparing an acidic solution containing a IIIA-ion, (b) adding an basic solution into the acidic solution to provide a growth solution of a specific pH v...	09/28/1999
5849627	Bonded wafer processing with oxidative bonding Low temperature wafer bonding using a chemically reacting material between wafers to form a bonded zone to bond two wafers together. Examples include silicon wafers with a silicon-oxidizing bonding liquid which also permits introduction of radiation harde...	12/15/1998
5696023	Method for making aluminum gallium arsenide semiconductor device with native oxide layer A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least...	12/09/1997
5567980	Native oxide of an aluminum-bearing group III-V semiconductor A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least...	10/22/1996
5443863	Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge Decomposition of ozone in a microwave discharge cavity leads to formation of highly energetic excited states of atomic oxygen which can efficiently oxidize materials at a temperature far less than that needed for purely thermal oxidation. This technique c...	08/22/1995
5418017	Method of forming oxide film A method of forming an oxide film of a high quality 400° C. or below. Ions of an inert gas, whose kinetic energy is 90 or below eV, are applied on the surface of a material of a semiconductor, metal or alloy, and oxygen gas molecules are fed. Thereby, a ...	05/23/1995
5407614	Process of making pitch-based carbon fibers Carbon fibers are provided essentially consisting of liquid crystal pitch based continuous monofilaments having an average filament diameter of 30 μm or greater. The carbon fibers can have modulus of elasticity of 80,000 Kgf/mm2 or greater and...	04/18/1995
5401357	Dry etching method A method may be used to dry etch a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma. The method is capable of selectively etching the desired mat...	03/28/1995
5373522	Semiconductor devices with native aluminum oxide regions A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least...	12/13/1994
5360768	Method of forming oxide film The present invention relates to a method of forming an oxide film comprising; a first step to form an oxide film on the surface of a substrate by bringing a solution containing oxygen and/or oxygen-containing molecule in contact with the surface of said ...	11/01/1994
5334273	Wafer bonding using trapped oxidizing vapor A bonding method including pressing a pair of slices together with a liquid oxidant therebetween and subjecting the pair of slices to a temperature to bond the slices together. Preferably a liquid oxidant is applied to one of the slices before they are pr...	08/02/1994
5266135	Wafer bonding process employing liquid oxidant A bonding method including pressing a pair of slices together with a liquid oxidant therebetween and subjecting the pair of slices to a temperature to bond the slices together. Preferably a liquid oxidant is applied to one of the slices before they are pr...	11/30/1993
5266518	Method of manufacturing a semiconductor body comprising a mesa In the method according to the invention, the upper and thicker of two semiconductor layers is etched by means of a selective and preferential etchant, substantially no underetching occurring with respect to the mask. Subsequently, the lower and thinner s...	11/30/1993
5262360	AlGaAs native oxide A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least...	11/16/1993
5238849	Method of fabricating semiconductor device A bipolar transistor having a silicon oxide film having a stoichiometric composition ratio of silicon to oxygen controlled to 1 to 2 formed at the boundary between a monocrystalline layer and a polycrystalline layer. In fabrication, a natural oxidized fil...	08/24/1993
5232870	Method for production of bonded wafer A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxyg...	08/03/1993
5223458	Method of manufacturing a III-V semiconductor device using a self-biased substrate and a plasma containing an electronegative species A passivation technique which significantly reduces degradation in reverse breakdown voltage characteristics usually introduced by passivation of active regions of field effect transistors is described. The technique uses a surface treatment in a plasma t...	06/29/1993
5219613	Process for producing storage-stable surfaces of polished silicon wafers Silicon wafers are first subjected to an oxidative treatment and subsequey to exposure to organosilicon compounds which contain at least one radical in the molecule which is hydrolyzably bound to the silicon and at least one radical in the molecule havin...	06/15/1993
5147827	Method for producing a passivation film of InP compound semiconductor A device such as a phototransistor, a photodiode, a laser diode or the like including a compound semiconductor coated with a stable passivation film to reduce leakage current is disclosed. The passivation film includes oxygen, a metallic element and const...	09/15/1992
5021365	Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and w...	06/04/1991
4994140	Method capable of forming a fine pattern without crystal defects In a method of processing a compound semiconductor wafer to deposit or form a specific layer on a wafer surface, to partially remove the specific layer to partially expose the wafer surface, and to etch a partially exposed area of the wafer, etching is pe...	02/19/1991
4933299	Method of forming 3-D structures using MOVCD with in-situ photoetching MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching. To prevent pattern broadening by diffussion of...	06/12/1990
4914743	Yoked orthogonally distributed equal reactance non-coplanar traveling wave amplifier A Field Effect Transistor (FET) device especially useful in common gate amplifiers of signals in the microwave to millimeter range. The device's input and output are impedence matched to preclude phase cancellation and form a traveling wave amplifier capa...	04/03/1990
4902647	Surface modification using low energy ground state ion beams A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux and energy. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The e...	02/20/1990
4855190	Electroluminescent lighting elements A continuous, foil-like electroluminescent lighting element having a plurality of separate units, each unit constituted of one or more discrete pieces of a phosphor, and being fully encapsulated in a cell consisting of a dielectric, which cell is at least...	08/08/1989
4843450	Compound semiconductor interface control Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and w...	06/27/1989
4806505	Samarium- and ytterbium-promoted oxidation of silicon and gallium arsenide surfaces A method is provided for the oxidation of a silicon or gallium arsenide surface by depositing thereon a samarium or ytterbium overlayer prior to exposure of the surface to an oxidizing atmosphere....	02/21/1989
4776925	Method of forming dielectric thin films on silicon by low energy ion beam bombardment A low-energy oxygen and/or nitrogen ion beam with an energy level of about 60 eV is used to form an ultra-thin layer of silicon adduct on unheated silicon substrates. The ion beam is created with a single-grid Kaufman-type source and the process is perfor...	10/11/1988
4749640	Integrated circuit manufacturing process A process is disclosed for manufacturing an integrated circuit in which multiple patterned layers of thin film materials are provided on a silicon wafer. The wafer is conditioned between the providing of layers, after each etching step, by rinsing the ite...	06/07/1988
4721685	Single layer poly fabrication method and device with shallow emitter/base junctions and optimized channel stopper A method for fabricating high performance bipolar transistors using a single polycrystalline silicon layer whereby horizontally and vertically scaled base/emitter junctions are achieved. In an extrinsic base transistor, a composite sandwich of overlying l...	01/26/1988

«First «Previous1 2 Next»Last»

PatentStorm

Did You Know...

PatentStorm News

Class 257/E21.283 - Of semiconductor material, e.g., by oxidation of semiconductor body itself (EPO)