Class 257/E21.28 - Deposition of aluminum oxide (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.274. This
No. of patents: 30
Last issue date: 08/12/2008

Number	Title	Issue Date
7411255	Dopant barrier for doped glass in memory devices A semiconductor device has a diffusion barrier formed between a doped glass layer and surface structures formed on a substrate. The diffusion barrier includes alumina and optionally a nitride, and has a layer thickness satisfying the high aspect ratio of the gaps be...	08/12/2008
7351656	Semiconductor device having oxidized metal film and manufacture method of the same A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in ...	04/01/2008
7320943	Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same Disclosed is a capacitor with a dielectric layer having a low equivalent oxide thickness compared to a HfO2 layer and capable of decreasing a level of a leakage current incidence and a method for fabricating the same. Particularly, the capacitor includes:...	01/22/2008
7303991	Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ...	12/04/2007
7235502	Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors A gate dielectric structure (201) fabrication process includes forming a transitional dielectric film (205) overlying a silicon oxide film (204). A high dielectric constant film (206) is then formed overlying an upper surface of the trans...	06/26/2007
7196008	Aluminum oxide as liner or cover layer to spacers in memory device For fabricating a memory device, spacers are formed to sides of word-line gates. In addition, aluminum oxide is formed as one of a liner layer or a cover layer to the spacers. The aluminum oxide has a chemical composition of Al2O3 for example. ...	03/27/2007
7153785	Method of producing annealed wafer and annealed wafer The present invention provides method of producing an annealed wafer wherein a silicon single crystal wafer produced by the Czochralski (CZ) method is subjected to a high temperature annealing in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereo...	12/26/2006
7141500	Methods for forming aluminum containing films utilizing amino aluminum precursors A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: Al(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R...	11/28/2006
6635559	Formation of insulating aluminum oxide in semiconductor substrates The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a vari...	10/21/2003
6627462	Semiconductor device having a capacitor and method for the manufacture thereof A semiconductor device for use in a memory cell includes an active matrix provided with a silicon substrate, a transistor formed on the silicon substrate, a capacitor structure formed over the transistor, a metal interconnection for electrically connectin...	09/30/2003
6620670	Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2 O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an...	09/16/2003
6617173	Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition A technique to form an ultrathin dielectric layer over a ferromagnetic layer by atomic layer deposition....	09/09/2003
6617212	Semiconductor device and method for fabricating the same using damascene process A semiconductor device and a method for fabricating the semiconductor device using a damascene process are disclosed. The method includes forming an Al2 O3 film over a dummy gate disposed over a semiconductor substrate. Next, the dum...	09/09/2003
6524918	Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectric A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. An aluminum oxide (Al2 O3) layer is deposited on top of the semiconductor substrate and then, silic...	02/25/2003
6426307	Method of manufacturing an aluminum oxide film in a semiconductor device In a method of manufacturing an aluminum oxide film using atomic layer deposition, alcohol is delivered as an oxygen source instead of water vapor into a reactor via a different delivery line from an aluminum source. Thus, the disclosed method can prevent...	07/30/2002
6403156	Method of forming an A1203 film in a semiconductor device A method is disclosed for forming an aluminum oxide film on a semiconductor device. In a process of depositing an aluminum oxide film by atomic layer deposition method using TMA (trimethyl aluminum; Al(CH3)3) as an aluminum source an...	06/11/2002
6124158	Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants A process is provided for the formation of a thin film of gate dielectric or similar material on a silicon semiconductor substrate from an organic precursor by atomic layer epitaxy, wherein the organic precursor is introduced to react with the treated sur...	09/26/2000
5807765	Processing of Sb-based lasers A method for passivating a III-V semiconductor surface with Al2 O3 is disclosed. Sb-based semiconductor lasers may be etched with a solution of HCl:HNO3 :H2 O for a more uniform surface....	09/15/1998
5177031	Method of passivating etched mirror facets of semiconductor laser diodes A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability. The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may...	01/05/1993
4790920	Method for depositing an al₂ O₃ cap layer on an integrated circuit substrate A process for depositing a layer of reactively sputtered aluminum oxide on a wafer is disclosed, having particular application in semiconductor fabrication. A wafer is provided with a layer of aluminum (or aluminum with 1% silicon) having a thickness of g...	12/13/1988
4767724	Unframed via interconnection with dielectric etch stop A layer of aluminum oxide or other insulative metal oxide is employed as an etch stop in the fabrication of very large scale integrated circuit devices. The use of such etch stops permits fabrication of unframed or borderless via openings and correspondin...	08/30/1988
4617192	Process for making optical INP devices The invention is a process for putting down coatings of aluminum oxide on optical surfaces using electron-beam deposition in an oxygen-enriched atmosphere. Particularly good results are obtained when oxygen is flowed over or directed at the surface to be ...	10/14/1986
4592927	Growth of oxide thin films using solid oxygen sources Oxide (Rm On) films are grown by evaporation from separate sources of element (R) and an oxide (Mr Os) which serves as the oxygen source. The oxide (Mr Os) should sublimate congruently; i.e...	06/03/1986
4561009	Semiconductor device A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected fr...	12/24/1985
4433004	Semiconductor device and a method for manufacturing the same A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected fr...	02/21/1984
4389973	Apparatus for performing growth of compound thin films A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps...	06/28/1983
4302278	GaAs Crystal surface passivation method Reheating the cooled wafer product of the known method of forming thermal oxide surface passivation layers on GaAs crystal wafers, i.e. heating the wafer in contact with thermally vaporized As2 O3 in a substantially oxygen free close...	11/24/1981
4133925	Planar silicon-on-sapphire composite A semi-planar silicon-on-sapphire composite comprises a sapphire substrate, an epitaxial monocrystalline silicon mesa formed adjacent the substrate and an epitaxial deposition of monocrystalline aluminum oxide surrounding the mesa....	01/09/1979
4076573	Method of making planar silicon-on-sapphire composite A method is provided for the manufacture of a semi-planar silicon-on-sapphire composite comprising a sapphire substrate, an epitaxial monocrystalline silicon mesa formed adjacent the substrate and an epitaxial deposition of monocrystalline aluminum oxide ...	02/28/1978
4053335	Method of gettering using backside polycrystalline silicon An integrated circuit structure and method for manufacturing same which provides for gettering with a backside layer of polycrystalline silicon. The gettering of unwanted impurities from the integrated circuits involves the deposition of a polycrystalline...	10/11/1977

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Class 257/E21.28 - Deposition of aluminum oxide (EPO)