Quotables
"During my service in the United States Congress, I took the initiative in creating the Internet."
Al Gore ; The basis for the later misquote by US Republicans that Gore had "invented" the Internet. Gore was the leading political champion of the modern-day Internet.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7442656 | Method and apparatus for forming silicon oxide film A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a chlorosilane family gas, a second process gas containing a Cl-replacing gas, and a third process gas containin... | 10/28/2008 |
| RE40507 | Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume... | 09/16/2008 |
| 7416988 | Semiconductor device and fabrication process thereof A method of fabricating a semiconductor device includes the steps of modifying a damaged layer containing carbon and formed at a semiconductor surface by exposing the damaged layer to oxygen radicals to form a modified layer, and removing the modified layer by a wet... | 08/26/2008 |
| 7387926 | Method for manufacturing CMOS image sensor A method for manufacturing a CMOS image sensor is provided. The method includes forming a gate electrode on a semiconductor layer having defined regions of a photodiode region and a logic region, such that a gate oxide film is interposed between the semiconductor la... | 06/17/2008 |
| 7388228 | Display device and method of manufacturing the same Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either b... | 06/17/2008 |
| 7354873 | Method for forming insulation film A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas ... | 04/08/2008 |
| 7352053 | Insulating layer having decreased dielectric constant and increased hardness A method of manufacturing a mechanically robust insulating layer, including forming a low-k dielectric layer having a first dielectric constant on a substrate and forming a carbon nitride cap layer on the low-k dielectric layer, the insulating layer thereby having a... | 04/01/2008 |
| 7351643 | Method of manufacturing a semiconductor device Even though photolithography with a diameter of 0.20 μm or less is employed, a contact hole having a tapered shape with a required width including a positioning tolerance can be formed in a narrower gap between the gate electrodes. A method forms a minute contact h... | 04/01/2008 |
| 7329947 | Heat treatment jig for semiconductor substrate When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and supports the semiconductor substrate, and a second jig (holder) that... | 02/12/2008 |
| 7320943 | Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same Disclosed is a capacitor with a dielectric layer having a low equivalent oxide thickness compared to a HfO2 layer and capable of decreasing a level of a leakage current incidence and a method for fabricating the same. Particularly, the capacitor includes:... | 01/22/2008 |
| 7312127 | Incorporating dopants to enhance the dielectric properties of metal silicates The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. Accor... | 12/25/2007 |
| 7304004 | System and method for forming a gate dielectric A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionize... | 12/04/2007 |
| 7297640 | Method for reducing argon diffusion from high density plasma films A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used for generating the high density plasma. The first step deposition uses... | 11/20/2007 |
| 7294583 | Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more eff... | 11/13/2007 |
| 7294588 | In-situ-etch-assisted HDP deposition A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having a... | 11/13/2007 |
| 7247939 | Metal filled semiconductor features with improved structural stability A method for forming a metal filled semiconductor feature with improved structural stability including a semiconductor wafer having an anisotropically etched opening formed through a plurality of dielectric insulating layers revealing a first etching resistant layer... | 07/24/2007 |
| 7205248 | Method of eliminating residual carbon from flowable oxide fill Methods of forming an oxide layer such as high aspect ratio trench isolations, and treating the oxide substrate to remove carbon, structures formed by the method, and devices and systems incorporating the oxide material are provided. ... | 04/17/2007 |
| 7205249 | CVD plasma assisted low dielectric constant films A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties ... | 04/17/2007 |
| 7199061 | Pecvd silicon oxide thin film deposition A method of depositing a gate dielectric layer for a thin film transistor is provided. The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound. ... | 04/03/2007 |
| 7144783 | Reducing gate dielectric material to form a metal gate electrode extension In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have vertical portions that may be exposed to a reduction reaction. As a result of the reduction reaction, the vertical portions may be converted to metal, which adds to the existing g... | 12/05/2006 |
| 7115501 | Method for fabricating an integrated circuit device with through-plating elements and terminal units A method for fabricating an integrated circuit device, an electrically conductive substrate being provided, an insulation layer being deposited on the substrate, the insulation layer being etched in structures, a contact-making layer being deposited on the patterned... | 10/03/2006 |
| 6703708 | Graded thin films Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of imp... | 03/09/2004 |
| 6703282 | Method of reducing NMOS device current degradation via formation of an HTO layer as an underlying component of a nitride-oxide sidewall spacer A method of forming an NMOS device with reduced device degradation, generated during a constant current stress, has been developed. The reduced device degradation is attributed to the use of a high temperature oxide (HTO), layer, used as an underlying com... | 03/09/2004 |
| 6696362 | Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of ti... | 02/24/2004 |
| 6693003 | Semiconductor device and manufacturing method of the same In a semiconductor device, formed are a lower capacitor electrode on an element isolation film on a silicon substrate, a capacitor insulating film and an upper capacitor electrode. A silicon oxide film is formed on the entire surface of the silicon substr... | 02/17/2004 |
| 6690084 | Semiconductor device including insulation film and fabrication method thereof A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implant... | 02/10/2004 |
| 6689696 | Method for manufacturing semiconductor device employing dielectric layer used to form conductive layer into three dimensional shape A method for manufacturing a semiconductor device employing a dielectric layer for forming a conductive layer into a three-dimensional shape. The dielectric layer is formed on a substrate in such a manner as to provide an intrinsic etch rate within the la... | 02/10/2004 |
| 6683005 | Method of forming capacitor constructions The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material t... | 01/27/2004 |
| 6682979 | Methods of forming transistors associated with semiconductor substrates The invention encompasses a method of forming an oxide region over a semiconductor substrate. A nitrogen-containing layer is formed across at least some of the substrate. After the nitrogen-containing layer is formed, an oxide region is grown from at leas... | 01/27/2004 |
| 6669858 | Integrated low k dielectrics and etch stops A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in depos... | 12/30/2003 |
| 6670242 | Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer A method for making an integrated circuit device includes forming source and drain regions in a semiconductor substrate and defining a channel region therebetween, forming a graded, grown, gate oxide layer adjacent the channel region, forming a nitride la... | 12/30/2003 |
| 6669825 | Method of forming a dielectric film A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals... | 12/30/2003 |
| 6670275 | Method of rounding a topcorner of trench A method for pulling back SiN to increase rounding effect in a shallow trench isolation process, includes the steps of preparing a substrate of Si and forming a SiO2 layer on the substrate, forming a Si3 N4 layer on the Si... | 12/30/2003 |
| 6670283 | Backside protection films Disclosed is a method of fabricating a semiconductor device, comprising: (a) providing a bare semiconductor substrate, the substrate having a frontside and a backside; (b) forming one or more protective films on the backside of the substrate; and (c) perf... | 12/30/2003 |
| 6667540 | Method and apparatus for reducing fixed charge in semiconductor device layers The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon... | 12/23/2003 |
| 6660656 | Plasma processes for depositing low dielectric constant films A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociat... | 12/09/2003 |
| 6660663 | Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier pr... | 12/09/2003 |
| 6660666 | Integrated processing system for forming an insulating layer of thin film transistor liquid crystal display A processing station for forming an insulating film comprises a chemical vapor deposition (CVD) unit, a cleaning unit, a cassette station that receives a plurality of substrates, and a transfer system. The transfer system effectuates the conveyance of a s... | 12/09/2003 |
| 6656854 | Method of forming a low dielectric constant film with tetramethylcyclotetrasiloxane (TMCTS) and LPCVD technique In a method for manufacturing a semiconductor device, a semiconductor substrate is provided. On the substrate, conductors spaced apart from one another are formed. Then, an insulating layer is formed on the conductors and the substrate. The insulating lay... | 12/02/2003 |
| 6656313 | Structure and method for improved adhesion between two polymer films A method for improving the adhesion between polyimide layers and the structure formed by the method. A silicon oxide-containing layer is formed on the surface of a polyimide layer and a second layer of polyimide is formed on the silicon oxide-containing l... | 12/02/2003 |
