Class 257/E21.278 - Deposition of silicon oxide (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.274. This
No. of patents: 120
Last issue date: 10/28/2008

«First «Previous1 2 3 Next»Last»

Number	Title	Issue Date
7442640	Semiconductor device manufacturing methods Methods of manufacturing a semiconductor device including a high-voltage device region and a low-voltage device region are provided. An illustrated method includes forming, on a substrate, a gate pattern for a high-voltage device and a low-voltage device; implanting...	10/28/2008
7439117	Method for designing a micro electromechanical device with reduced self-actuation A method is described for designing a micro electromechanical device in which the risk of self-actuation of the device in use is reduced. The method includes locating a first conductor in a plane and locating a second conductor with its collapsible portion at a pred...	10/21/2008
7435691	Micromechanical component and suitable method for its manufacture A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm featuring a silicon-oxide layer having an opening that is formed by silicon-...	10/14/2008
7435684	Resolving of fluorine loading effect in the vacuum chamber This invention relates to electronic device fabrication processes for making devices such as semiconductor wafers and resolves the fluorine loading effect in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow ...	10/14/2008
7416908	Method for fabricating a micro structure A method for fabricating a micro structure includes depositing a first layer of a first material over a substrate; patterning a first hard mask over the first layer; depositing a second layer of a second material over the first layer and the first hard mask; pattern...	08/26/2008
7416986	Test structure and method for detecting via contact shorting in shallow trench isolation regions A test structure for detecting void formation in semiconductor device layers includes a plurality of active device areas formed in a substrate, a plurality of shallow trench isolation (STI) regions separating the active device areas, a plurality of gate electrode st...	08/26/2008
7413998	Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed...	08/19/2008
7408215	Dynamic random access memory A DRAM structure on a silicon substrate has an active area, gate conductors, deep trench capacitors, and vertical transistors. The deep trench capacitors are formed at intersections of the active area and the gate conductors, and each deep trench capacitor is couple...	08/05/2008
7397074	RF field heated diodes for providing thermally assisted switching to magnetic memory elements An exemplary array of thermally-assisted magnetic memory structures includes a plurality of magnetic memory elements, each magnetic memory element being near a diode. A diode near a selected magnetic memory element can be heated by absorbing energy from a radio freq...	07/08/2008
7393736	Atomic layer deposition of ZrHfSnOfilms as high k gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO2), hafnium oxide (HfO2) and tin oxide (SnO2) acting as a single dielectric layer with a formula of ZrXHfYSn...	07/01/2008
7374964	Atomic layer deposition of CeO/AlOfilms as gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate layered dielectric layer of cerium oxide and aluminum oxide acting as a single dielectric layer with a ratio of approximately two to one between the cerium oxide and the aluminum oxide, and a method of ...	05/20/2008
7368359	Method for manufacturing semiconductor substrate and semiconductor substrate A semiconductor substrate (100) is acquired by forming a mask with a target thickness on a major surface of a single-crystal silicon substrate, implanting oxygen ions to the major surface at a high temperature, forming a surface protection layer for blocking ...	05/06/2008
7348204	Method of fabricating solid state imaging device including filling interelectrode spacings A method for fabricating a solid state imaging device comprising photoelectric conversion sections and charge transfer sections having single-layered charge transfer electrodes for transferring charges generated in the photoelectric conversion sections, the method i...	03/25/2008
7259111	Interface engineering to improve adhesion between low k stacks A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a ...	08/21/2007
7259112	Method for minimizing corner effect by densifying the insulating layer The invention concerns a method for minimizing “corner” effects in shallow silicon oxide trenches, by densifying the silicon oxide layer after it has been deposited in the trenches. Said densification is preferably carried out by irradiating the layer under lumi...	08/21/2007
7253036	Method of forming gate insulation film using plasma method of fabricating poly-silicon thin film transistor using the same A method of forming a gate insulation film of a crystallized thin film transistor, is provided, which can enhance an interfacial feature which exists between a gate oxide film and a silicon thin film substrate and which is fatal to performance of the thin film trans...	08/07/2007
7235449	Method of forming a gate oxide film for a high voltage region of a flash memory device A method of forming a gate oxide film for high voltage region of semiconductor devices includes forming patterns on a semiconductor substrate having a high voltage region, thereby exposing only a gate oxide film formation region for high voltage, forming a metal oxi...	06/26/2007
7235502	Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors A gate dielectric structure (201) fabrication process includes forming a transitional dielectric film (205) overlying a silicon oxide film (204). A high dielectric constant film (206) is then formed overlying an upper surface of the trans...	06/26/2007
7192893	Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off A process for enhanced selective deposition of a silicon oxide onto a substrate by pulsing delivery of the reactants through a linear injector is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relat...	03/20/2007
7192888	Low selectivity deposition methods A deposition method includes forming a nucleation layer over a substrate, forming a layer of a first substance at least one monolayer thick chemisorbed on the nucleation layer, and forming a layer of a second substance at least one monolayer thick chemisorbed on the...	03/20/2007
7071126	Densifying a relatively porous material An interlayer dielectric may be exposed to a gas cluster ion beam to densify an upper layer of the interlayer dielectric. As a result, the upper layer of the interlayer dielectric may be densified without separate deposition steps and without the need for etch stops...	07/04/2006
6596654	Gap fill for high aspect ratio structures Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition pr...	07/22/2003
6558756	Method of forming interlayer insulating film A material containing, as a main component, an organic silicon compound represented by the following general formula: R1x Si(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl ...	05/06/2003
6531714	Process for the production of a semiconductor device having better interface adhesion between dielectric layers A method for manufacturing a semiconductor device having improved adhesion at an interface between layers of dielectric material, comprising the steps of forming a first layer of dielectric material on at least one part of a structure defined in a semicon...	03/11/2003
6520189	CVD apparatus An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical c...	02/18/2003
6500772	Methods and materials for depositing films on semiconductor substrates A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R--NH)4-n SiXn, wherein...	12/31/2002
6475925	Reduced water adsorption for interlayer dielectric A method for forming a semiconductor device is disclosed in which a fluorinated silicon dioxide layer is formed over a semiconductor substrate. A first undoped silicon dioxide layer, with a thickness preferably less than approximately 50 nanometers, is th...	11/05/2002
6335288	Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching condition...	01/01/2002
6333276	Semiconductor device and method of forming semiconductor device A semiconductor device according to the present invention includes insulating branches which are formed as an interlayer insulating film on a semiconductor substrate. The interlayer insulating film has holes (voids) between the branches to thereby reduce ...	12/25/2001
6211096	Tunable dielectric constant oxide and method of manufacture A method is shown for manufacturing a semiconductor device in which a silicon oxide film acts as an insulating film for electrically isolating conductive layers included in the semiconductor device. An oxynitride silicon-oxide-like film is formed containi...	04/03/2001
6190926	Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion A yield enhancement technique for integrated circuit processing which reduces the deleterious effects of H2 O contamination which is absorbed by conventional dielectric films resulting in an undesired subsequent out-diffusion of hydrogen when t...	02/20/2001
6169004	Production method for a semiconductor device A P-type impurity layer, a silicon monocrystal film, a silicon oxide film and a crystal silicon film are successively formed on a semiconductor substrate by introducing appropriate functional gases on the semiconductor substrate, while irradiating the sem...	01/02/2001
6153537	Process for the production of a semiconductor device having better interface adhesion between dielectric layers A method for manufacturing a semiconductor device having improved adhesion at an interface between layers of dielectric material, comprising the steps of forming a first layer of dielectric material on at least one part of a structure defined in a semicon...	11/28/2000
6143672	Method of reducing metal voidings in 0.25 μm AL interconnect In one embodiment, the present invention relates to a method of depositing a dielectric layer over a stacked interconnect structure, involving the steps of: providing a substrate having at least one stacked interconnect structure comprising at least one o...	11/07/2000
6140246	In-situ P doped amorphous silicon by NH3 to form oxidation resistant and finer grain floating gates A polysilicon-based floating gate is formed so as to be resistant to oxidation that occurs during multiple thermo-cycles in fabrication. Accordingly, edge erase times in NOR-type memory devices may be minimized. Additionally, manufacture of oxidation resi...	10/31/2000
6121162	Method of forming a fluorine-added insulating film There is provided a method of forming an insulating film containing fluorine therein, including the steps of dissociating a process gas containing no hydrogen molecules and atoms with plasma in a reduced pressure, and varying said pressure while said insu...	09/19/2000
6042901	Method for depositing fluorine doped silicon dioxide films A process of preparing a moisture-resistant fluorine containing silicon oxide film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substra...	03/28/2000
6030900	Process for generating a space in a structure In a method for the production of a spacer layer in a structure in a first step a structure is produced by anisotropic dry etching, and in a further step an oxide layer is deposited with an organic silicon precursor at a pressure of p=0.2-1 bar and a temp...	02/29/2000
5989998	Method of forming interlayer insulating film A material containing, as a main component, an organic silicon compound represented by the following general formula: R1x Si(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl ...	11/23/1999
5990513	Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion A yield enhancement technique for integrated circuit processing which reduces the deleterious effects of H2 O contamination which is absorbed by conventional dielectric films resulting in an undesired subsequent out-diffusion of hydrogen when t...	11/23/1999

«First «Previous1 2 3 Next»Last»

PatentStorm

Quotables

PatentStorm News

Class 257/E21.278 - Deposition of silicon oxide (EPO)