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| Number | Title | Issue Date |
| 7390757 | Methods for improving low k FSG film gap-fill characteristics The present invention relates to fluorinated silicate glass (FSG) with low dielectric constant and improved gap-fill characteristics. In the present method, a fluorinated silicon source, an optional fluorine source, an optional carbon source, a hydrogen source, and ... | 06/24/2008 |
| 7247939 | Metal filled semiconductor features with improved structural stability A method for forming a metal filled semiconductor feature with improved structural stability including a semiconductor wafer having an anisotropically etched opening formed through a plurality of dielectric insulating layers revealing a first etching resistant layer... | 07/24/2007 |
| 7226875 | Method for enhancing FSG film stability A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The ga... | 06/05/2007 |
| 7199041 | Methods for fabricating an interlayer dielectric layer of a semiconductor device Methods for fabricating an interlayer dielectric layer of a semiconductor device are disclosed. An illustrated method comprises forming a metallic interconnect on a substrate; depositing an SRO layer on the metallic interconnect while the substrate is located in a c... | 04/03/2007 |
| 6696360 | Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in int... | 02/24/2004 |
| 6667248 | Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, a... | 12/23/2003 |
| 6649219 | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes containing one or more organofluoro silanes having the formula SiR1 R | 11/18/2003 |
| 6645873 | Method for manufacturing a semiconductor device A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF+H2 O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.... | 11/11/2003 |
| 6642619 | System and method for adhesion improvement at an interface between fluorine doped silicon oxide and tantalum A Fluorine doped Silicon Oxide (SiO2)/Tantalum interface and method for manufacturing the same are provided that ensure the structural integrity of integrated circuits that include a Fluorine doped Silicon Oxide structure and a corresponding Ta... | 11/04/2003 |
| 6633076 | Methods and apparatus for producing stable low k FSG film for HDP-CVD Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In... | 10/14/2003 |
| 6627996 | Semiconductor device having fluorine containing silicon oxide layer as dielectric for wiring pattern having anti-reflective layer and insulating layer thereon A semiconductor device with satisfactory bonding ability of a plasma SiOF oxide layer on a wiring and satisfactory burying ability for burying wiring space portions. The semiconductor substrate, forming an anti-reflection layer of a refractory metal or co... | 09/30/2003 |
| 6620739 | Method of manufacturing semiconductor device An inorganic insulating film 103 of SiC is formed on a fluorine-containing carbon film 102 by a chemical vapor deposition process using SiF4 and C2 H4 as source gases. By using SiF4 and CF4 containing... | 09/16/2003 |
| 6614096 | Method for manufacturing a semiconductor device and a semiconductor device Disclosed is a method for manufacturing a semiconductor device, which comprises the steps of forming a first insulating film made of a low dielectric constant material and containing carbon, subjecting the first insulating film to a surface treatment to r... | 09/02/2003 |
| 6596654 | Gap fill for high aspect ratio structures Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition pr... | 07/22/2003 |
| 6593248 | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a flu... | 07/15/2003 |
| 6586346 | Method of forming an oxide film A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The... | 07/01/2003 |
| 6583048 | Organosilicon precursors for interlayer dielectric films with low dielectric constants A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl e... | 06/24/2003 |
| 6572925 | Process for forming a low dielectric constant fluorine and carbon containing silicon oxide dielectric material A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C--H bo... | 06/03/2003 |
| 6558756 | Method of forming interlayer insulating film A material containing, as a main component, an organic silicon compound represented by the following general formula: R1x Si(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl ... | 05/06/2003 |
| 6555910 | Use of small openings in large topography features to improve dielectric thickness control and a method of manufacture thereof The present invention provides a semiconductor device and method of manufacture thereof that provides improved dielectric thickness control. The semiconductor device includes a metal feature located on a semiconductor substrate, wherein the metal feature ... | 04/29/2003 |
| 6551921 | Method of polishing a stack of dielectric layers including a fluorine containing silicon oxide layer A first layer metal wire, an SiOF film and an F diffusion prevention film are formed on a surface of a base layer including a substrate, elements formed on the substrate and an insulator layer formed to cover the substrate and the elements. The F diffusio... | 04/22/2003 |
| 6541400 | Process for CVD deposition of fluorinated silicon glass layer on semiconductor wafer An improved process for depositing a robust fluorosilicate glass film on a substrate in a chamber includes maintaining a total pressure in the chamber of less than about 1.7 torr, introducing vapor phase chemicals such as N2, SiF4, S... | 04/01/2003 |
| 6534616 | Precursors for making low dielectric constant materials with improved thermal stability Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp2 C--F and some hyperconjugated sp3 C--F bonds are disclosed in this inventi... | 03/18/2003 |
| 6531385 | Method of forming metal/dielectric multi-layered interconnects A method for forming a metal/dielectric multi-layered interconnect. A conductive layer is formed over a substrate. A protective film is formed over the conductive layer. A first high-density plasma fluorinated silica glass (HDP-FSG) layer is formed over t... | 03/11/2003 |
| 6528410 | Method for manufacturing semiconductor device A semiconductor device is manufactured by forming a first fluorine doped plasma silicon oxide film having a high fluorine concentration on first metallic interconnections formed on a semiconductor substrate surface, forming a second fluorine doped plasma ... | 03/04/2003 |
| 6521546 | Method of making a fluoro-organosilicate layer A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro... | 02/18/2003 |
| 6511922 | Methods and apparatus for producing stable low k FSG film for HDP-CVD Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In... | 01/28/2003 |
| 6500315 | Method and apparatus for forming a layer on a substrate A method and an apparatus for forming a layer on a substrate are disclosed. In accordance with one embodiment, a substrate (901) is placed into a chamber (30) that includes a coil (16) and a shield (14) wherein the coil and the shield are electrically iso... | 12/31/2002 |
| 6495477 | Method for forming a nitridized interface on a semiconductor substrate A surface treatment method for forming a fluorine-doped nitridized interface on a semiconductor substrate. The fluorine-doped nitridized interface may be formed using an ammonia plasma CVD process having a treatment gas doped with a fluorine component, su... | 12/17/2002 |
| 6489230 | Integration of low-k SiOF as inter-layer dielectric A semiconductor device formed on a substrate includes at least one metal stack formed on the substrate. A fluorosilicate glass layer is formed on the at least one metal stack, where the fluorosilicate glass layer acts as an interlayer dielectric for the s... | 12/03/2002 |
| 6479410 | Processing method for object to be processed including a pre-coating step to seal fluorine A wafer is mounted on a mounting stand 3 that is provided with an electrostatic chuck. Then an SiOF film is formed by creating a plasma of a processing gas and heating the wafer W to approximately 350° C. while the surface of the mounting stand 3 is heat... | 11/12/2002 |
| 6475925 | Reduced water adsorption for interlayer dielectric A method for forming a semiconductor device is disclosed in which a fluorinated silicon dioxide layer is formed over a semiconductor substrate. A first undoped silicon dioxide layer, with a thickness preferably less than approximately 50 nanometers, is th... | 11/05/2002 |
| 6472335 | Methods of adhesion promoter between low-K layer and underlying insulating layer The present invention provides a method improving the adhesion between inter metal dielectric (IMD) layers by performing a HF dip etch to treat the surface of an oxide, silicon nitride or Silicon oxynitride insulating layer before an overlying low-K layer... | 10/29/2002 |
| 6468927 | Method of depositing a nitrogen-doped FSG layer Gap-fill and damascene methods are disclosed for depositing an insulating thin film of nitrofluorinated silicate glass on a substrate in a process chamber. A high-density plasma, generated from a gaseous mixture of silicon-, fluorine-, oxygen-, and nitrog... | 10/22/2002 |
| 6458718 | Fluorine-containing materials and processes Chemical precursors that contain carbon atoms and fluorine atoms can be activated under a variety of conditions to deposit fluorine-containing materials. Chemical precursors of the formula (F3 C)4-m-n MXm Rn, ar... | 10/01/2002 |
| 6455444 | Semiconductor device having a multilayer interconnection structure A semiconductor device includes a F-doped interlayer insulation film and a high-refractive index insulation film having a refractive index higher than a refractive index of the F-doped interlayer insulation film, such that the high-refractive index insula... | 09/24/2002 |
| 6451686 | Control of semiconductor device isolation properties through incorporation of fluorine in peteos films A method and apparatus for reducing oxide traps within a silicon oxide film by incorporating a selected level of fluorine in the silicon oxide film. The method includes the steps of distributing a fluorine source to a processing chamber at a selected rate... | 09/17/2002 |
| 6448655 | Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorin... | 09/10/2002 |
| 6448666 | Semiconductor device and method for forming insulating film The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supp... | 09/10/2002 |
| 6444593 | Surface treatment of low-K SiOF to prevent metal interaction A method for using low dielectric SiOF in a process to manufacture semiconductor products, comprising the steps of obtaining a layer of SiOF, and depleting fluorine from a surface of the SiOF layer. In a preferred embodiment, the depleting step comprises ... | 09/03/2002 |
