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| Number | Title | Issue Date |
| RE40507 | Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume... | 09/16/2008 |
| 7387926 | Method for manufacturing CMOS image sensor A method for manufacturing a CMOS image sensor is provided. The method includes forming a gate electrode on a semiconductor layer having defined regions of a photodiode region and a logic region, such that a gate oxide film is interposed between the semiconductor la... | 06/17/2008 |
| 7351643 | Method of manufacturing a semiconductor device Even though photolithography with a diameter of 0.20 μm or less is employed, a contact hole having a tapered shape with a required width including a positioning tolerance can be formed in a narrower gap between the gate electrodes. A method forms a minute contact h... | 04/01/2008 |
| 7320944 | Deposition of phosphosilicate glass film A method of forming a phosphosilicate glass, includes flowing a pre-deposition gas comprising an inert gas into a deposition chamber containing a substrate, where the temperature of the substrate is at a pre-deposition temperature of at least 400° C; continuously i... | 01/22/2008 |
| 7297620 | Method of forming an oxide layer including increasing the temperature during oxidation In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reactio... | 11/20/2007 |
| 7223706 | Method for forming plasma enhanced deposited, fully oxidized PSG film A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may ... | 05/29/2007 |
| 7220686 | Process for contact opening definition for active element electrical connections A method is provided for contact opening definition for active element electrical connections. According to the method, a layer of BPSG is formed on a surface of an integrated circuit, and a transparent layer of nitride UV is formed above the layer of BPSG. Preferab... | 05/22/2007 |
| 7199057 | Method of eliminating boron contamination in annealed wafer A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silico... | 04/03/2007 |
| 6962855 | Method of forming a porous material layer in a semiconductor device A material layer containing impurities that react with water molecules is formed on a substrate. The material layer is then heated under a pressure exceeding one atmosphere and in the presence of water vapor to generate pores in the material layer. The material laye... | 11/08/2005 |
| 6849497 | Method of fabricating a semiconductor integrated circuit including a capacitor formed on a single insulating substrate layer having lower boron dose in the vicinity of the surface thereof In the case where holes are defined in BPSG films, respectively, lower electrodes are formed of polysilicon inside the holes, respectively, a nitride film is formed on top of the respective lower electrodes and one of the BPSG films, and the nitride film is subjecte... | 02/01/2005 |
| 6703321 | Low thermal budget solution for PMD application using sacvd layer The present invention provides exemplary methods, apparatus and systems for planarizing an insulating layer, such as a borophosphosilicate glass (BPSG) layer, deposited over a substrate. In one embodiment, a substrate (140) is inserted into a substrate pr... | 03/09/2004 |
| 6689696 | Method for manufacturing semiconductor device employing dielectric layer used to form conductive layer into three dimensional shape A method for manufacturing a semiconductor device employing a dielectric layer for forming a conductive layer into a three-dimensional shape. The dielectric layer is formed on a substrate in such a manner as to provide an intrinsic etch rate within the la... | 02/10/2004 |
| 6667540 | Method and apparatus for reducing fixed charge in semiconductor device layers The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon... | 12/23/2003 |
| 6654226 | Thermal low k dielectrics An integrated circuit having an electrically insulating layer of an electrically nonconductive material, where the electrically insulating layer is disposed between at least two electrically conductive elements. The electrically nonconductive material is ... | 11/25/2003 |
| 6649514 | EEPROM device having improved data retention and process for fabricating the device An EEPROM device having improved data retention and process for fabricating the device includes a two-step deposition process for the fabrication of an ILD layer overlying the high voltage elements of an EEPROM memory cell. The ILD layer is fabricated by ... | 11/18/2003 |
| 6639285 | Method for fabricating a semiconductor device A method for making a semiconductor device is provided. The method allows for depositing a layer of a doped dielectric. The method further allows for executing plasma etching so that one or more etchant gases flow over the layer of doped dielectric. A red... | 10/28/2003 |
| 6627551 | Method for avoiding microscratch in interlevel dielectric layer chemical mechanical polishing process This invention discloses a method for avoiding microscratch in interlevel dielectric layer chemical mechanical polishing process. There is step height difference on surface of the interlevel dielectric layer between the memory array and the logic device, ... | 09/30/2003 |
| 6627973 | Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device A method of eliminating voids in the interlayer dielectric material of 0.18-μm flash memory semiconductor devices and a semiconductor device formed by the method. The present invention provides a method for eliminating voids in the interlayer dielectric ... | 09/30/2003 |
| 6620534 | Film having enhanced reflow characteristics at low thermal budget A method of forming a film having enhanced reflow characteristics at low thermal budget is disclosed, in which a surface layer of material is formed above a base layer of material, the surface layer having a lower melting point than the base layer. In thi... | 09/16/2003 |
| 6620662 | Double recessed transistor A transistor structure is provided. This structure has a source electrode and a drain electrode. A doped cap layer of Gax In1-x As is disposed below the source electrode and the drain electrode and provides a cap layer opening. An un... | 09/16/2003 |
| 6614096 | Method for manufacturing a semiconductor device and a semiconductor device Disclosed is a method for manufacturing a semiconductor device, which comprises the steps of forming a first insulating film made of a low dielectric constant material and containing carbon, subjecting the first insulating film to a surface treatment to r... | 09/02/2003 |
| 6599574 | Method and apparatus for forming a dielectric film using helium as a carrier gas The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior ... | 07/29/2003 |
| 6596641 | Chemical vapor deposition methods A chemical vapor deposition method includes providing a semiconductor substrate within a chemical vapor deposition chamber. At least one liquid deposition precursor is vaporized with a vaporizer to form a flowing vaporized precursor stream. The flowing va... | 07/22/2003 |
| 6596654 | Gap fill for high aspect ratio structures Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition pr... | 07/22/2003 |
| 6569782 | Insulating layer, semiconductor device and methods for fabricating the same An insulating layer having a BPSG layer, a semiconductor device and methods for fabricating them. After preparing an oxidizing atmosphere using an oxygen gas, a first seed layer is formed with a tetraethylorthosilicate (TEOS) and the oxygen gas. Thereafte... | 05/27/2003 |
| 6541809 | Method of making straight wall containers and the resultant containers A method for providing semiconductor openings having a substantially straight wall or other desired etch profile. An etchable material layer is formed having target dopant levels or other etch rate varying characteristics to compensate for the characteris... | 04/01/2003 |
| 6524911 | Combination of BPTEOS oxide film with CMP and RTA to achieve good data retention An improved method of fabricating a non-volatile semiconductor device having a BPTEOS oxide film is provided. The present method utilizes the step of performing a RTA at a temperature of about 800° C. immediately after the deposition of the BPTEOS film s... | 02/25/2003 |
| 6514882 | Aggregate dielectric layer to reduce nitride consumption A method including over a substrate, forming an aggregate comprising a barrier layer between a first dielectric layer comprising nitrogen and a second dielectric layer comprising phosphorous, and after forming the aggregate, thermally treating the substra... | 02/04/2003 |
| 6514876 | Pre-metal dielectric rapid thermal processing for sub-micron technology A process for forming silicate glass layers on substrates is disclosed. A silicate glass layer is first deposited onto a substrate, such as a semiconductor wafer. The wafer is then placed in a thermal processing chamber and heated in the presence of a rea... | 02/04/2003 |
| 6514837 | High density plasma chemical vapor deposition apparatus and gap filling method using the same A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at i... | 02/04/2003 |
| 6503826 | Semiconductor device and method for manufacturing the same In an LDD structure MOSFET, a protecting multilayer insulating film is formed to cover a gate electrode in order to protect the gate electrode and the gate oxide film from a moisture included in an upper level layer. The protecting multilayer insulating f... | 01/07/2003 |
| 6489254 | Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/... | 12/03/2002 |
| 6489253 | Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formed A method of eliminating voids in the interlayer dielectric material of 0.18-μm flash memory semiconductor devices and a semiconductor device formed by the method. The present invention provides a method for eliminating voids in the interlayer dielectric ... | 12/03/2002 |
| 6489255 | Low temperature/low dopant oxide glass film A layer of doped oxide glass is deposited on a semiconductor device in a chemical vapor deposition chamber by reacting gaseous sources of silicon, ozone and at least one boron or phosphorus dopant in a carrier gas, the ozone being present in a ratio of ab... | 12/03/2002 |
| 6461966 | Method of high density plasma phosphosilicate glass process on pre-metal dielectric application for plasma damage reducing and throughput improvement A method of forming a composite dielectric layer comprising the following steps. A structure having at least two semiconductor structures separated by a gap therebetween is provided. A first dielectric layer is formed over the structure, the two semicondu... | 10/08/2002 |
| 6441466 | Method and apparatus for reducing fixed charge in semiconductor device layers The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon... | 08/27/2002 |
| 6436195 | Method of fabricating a MOS device Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free rad... | 08/20/2002 |
| 6436806 | Semiconductor device manufacturing method for preventing electrical shorts between lower and upper interconnection layers A method for manufacturing a semiconductor device is provided which suppresses migration of lower interconnectors formed on a borophosphosilicate glass (BPSG) layer toward upper interconnectors as a result of secondary reflowing of the BPSG layer during s... | 08/20/2002 |
| 6432839 | Film forming method and manufacturing method of semiconductor device The invention is a method for forming a flattened interlayer insulating film covering a wiring layer or the like of a semiconductor IC device, and a method of manufacturing a semiconductor device. The film-forming method includes the steps of preparing a ... | 08/13/2002 |
| 6429149 | Low temperature LPCVD PSG/BPSG process A disclosed process use low pressure chemical vapor deposition (LPCVD) of doped oxide film on a substrate. The process includes the steps of providing a substrate in an LPCVD reactor and flowing BTBAS and oxygen into the LPCVD reactor to react on the subs... | 08/06/2002 |
