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| Number | Title | Issue Date |
| 7442633 | Decoupling capacitor for high frequency noise immunity Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the substrate,... | 10/28/2008 |
| 7442654 | Method of forming an oxide layer on a compound semiconductor structure A method of forming a dielectric layer structure on a supporting semiconductor structure having a first surface comprises providing a first beam of oxide; depositing a first layer of oxide on the first surface of the supporting semiconductor structure using the firs... | 10/28/2008 |
| 7416994 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates. ... | 08/26/2008 |
| 7408225 | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-... | 08/05/2008 |
| 7390756 | Atomic layer deposited zirconium silicon oxide films A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include form... | 06/24/2008 |
| 7319068 | Method of depositing low k barrier layers A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as ... | 01/15/2008 |
| 7312165 | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a meta... | 12/25/2007 |
| 7312127 | Incorporating dopants to enhance the dielectric properties of metal silicates The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. Accor... | 12/25/2007 |
| 7304004 | System and method for forming a gate dielectric A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionize... | 12/04/2007 |
| 7238629 | Deposition method, method of manufacturing semiconductor device, and semiconductor device The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic... | 07/03/2007 |
| 7202183 | Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substr... | 04/10/2007 |
| 7186663 | High density plasma process for silicon thin films A method is provided for forming a Si and Si—Ge thin films. The method comprises: providing a low temperature substrate material of plastic or glass; supplying an atmosphere; performing a high-density (HD) plasma process, such as an HD PECVD process using an induc... | 03/06/2007 |
| 7166541 | Method of forming dielectric layer using plasma enhanced atomic layer deposition technique A method of forming a dielectric layer using a plasma enhanced atomic layer deposition technique includes: loading a semiconductor substrate having a three-dimensional structure into a reaction chamber; and repeatedly performing the following steps until a dielectri... | 01/23/2007 |
| 7163901 | Methods for forming thin film layers by simultaneous doping and sintering A method is provided for forming a thin film layer on a substrate. The method includes the steps of doping a thin surface layer on the substrate with low energy ions of a dopant material, and heating the thin surface layer sufficiently to produce a reaction between ... | 01/16/2007 |
| 7160821 | Method of depositing low k films A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate le... | 01/09/2007 |
| 7153786 | Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semicondu... | 12/26/2006 |
| 7125813 | Method of depositing low K barrier layers A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as ... | 10/24/2006 |
| 6900481 | Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors A method for forming a transistor includes forming a gate dielectric layer over a portion of a semiconductor substrate, the substrate being substantially free of silicon; defining a gate electrode over a portion of the gate dielectric layer; and introducing ions int... | 05/31/2005 |
| 6846757 | Dielectric layer for a semiconductor device and method of producing the same A semiconductor device includes a low dielectric constant insulating film exhibiting an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein... | 01/25/2005 |
| 6693792 | Semiconductor integrated circuits and fabricating method thereof A capacitor having an equivalent thickness of 3.0 nm or less, with a sufficient static capacitance and less leakage current in a reduced size, constituted by stacking an interfacial film 21 having a physical thickness of 2.5 nm or more for suppressing tun... | 02/17/2004 |
| 6690052 | Semiconductor device having a capacitor with a multi-layer dielectric A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of... | 02/10/2004 |
| 6683011 | Process for forming hafnium oxide films A process for forming a hafnium oxide-containing film on a substrate such as silicon that includes introducing an anhydrous hafnium nitrate-containing precursor into a reactor containing the substrate, and converting the precursor into the hafnium oxide-c... | 01/27/2004 |
| 6683012 | Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insu... | 01/27/2004 |
| 6682974 | Fabricating capacitor of semiconductor device Disclosed is a method for fabricating a capacitor in a semiconductor device. A semiconductor substrate is provided. A bottom electrode is formed on the substrate by sequentially depositing Ru through a PECVD process and Ru through a LPCVD process on the s... | 01/27/2004 |
| 6682973 | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfa... | 01/27/2004 |
| 6680130 | High K dielectric material and method of making a high K dielectric material A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric mater... | 01/20/2004 |
| 6679996 | Metal oxide pattern forming method In a pattern forming method for selectively forming an oxide layer on a substrate surface, the substrate surface is selectively coated with a coating layer. On the coating layer and an exposed part of the substrate surface, an oxide layer is formed by the... | 01/20/2004 |
| 6677250 | CVD apparatuses and methods of forming a layer over a semiconductor substrate The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through t... | 01/13/2004 |
| 6677254 | Processes for making a barrier between a dielectric and a conductor and products produced therefrom The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging ... | 01/13/2004 |
| 6674169 | Semiconductor device with titanium silicon oxide layer A semiconductor device comprised of a substantially conformal layer of titanium silicon oxide deposited on a semiconductor substrate. The layer of titanium silicon oxide is substantially free of chlorine related impurities. The layer of titanium silicon o... | 01/06/2004 |
| 6673668 | Method of forming capacitor of a semiconductor memory device A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a f... | 01/06/2004 |
| 6670242 | Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer A method for making an integrated circuit device includes forming source and drain regions in a semiconductor substrate and defining a channel region therebetween, forming a graded, grown, gate oxide layer adjacent the channel region, forming a nitride la... | 12/30/2003 |
| 6664160 | Gate structure with high K dielectric A method for forming a gate structure beginning with a semiconductor substrate provided with an isolation region formed therein. An HfO2 layer and a conductive layer are formed on the semiconductor substrate, subsequently. The conductive layer ... | 12/16/2003 |
| 6665207 | ROM embedded DRAM with dielectric removal/short A ROM embedded DRAM allows hard programming of ROM cells by shorting DRAM capacitor plates during fabrication. In one embodiment, the intermediate dielectric layer is removed and the plates are shorted with a conductor. In another embodiment, an upper con... | 12/16/2003 |
| 6656785 | MIM process for logic-based embedded RAM A method for forming a metal-interlayer-metal (MIM) device in an embedded memory device, including semiconductor devices thereof. An MIM device can be formed upon a semiconductor substrate utilizing no more than one additional photo mask layer prior to th... | 12/02/2003 |
| 6656788 | Method for manufacturing a capacitor for semiconductor devices A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON fil... | 12/02/2003 |
| 6653247 | Dielectric layer for a semiconductor device and method of producing the same A semiconductor device includes a low dielectric constant insulating film exhibiting an Si--H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, a... | 11/25/2003 |
| 6653185 | Method of providing trench walls by using two-step etching processes Method of providing trench walls of a uniform orientation to support epitaxial growth in the trench. The trench is formed by a first etching process. A second etching process is used to change crystal orientation and thus create a widened trench with modi... | 11/25/2003 |
| 6653246 | High dielectric constant materials A method and structure for an integrated circuit structure that includes introducing precursors on a substrate, oxidizing the precursors and heating the precursors. The introducing and the oxidizing of the precursors is preformed in a manner so as to form... | 11/25/2003 |
| 6653198 | Method for fabricating capacitor in semiconductor device and capacitor fabricated thereby A capacitor in a semiconductor device and fabricating method therefor are disclosed, in which the capacitor in a semiconductor device comprises: a semiconductor substrate, a first Ru film formed on the semiconductor substrate, a Y2 O3 | 11/25/2003 |
