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| Number | Title | Issue Date |
| 7390756 | Atomic layer deposited zirconium silicon oxide films A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include form... | 06/24/2008 |
| 7368774 | Capacitor and its manufacturing method, ferroelectric memory device, actuator, and liquid jetting head A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate titanate or lead zirconate titanate niobate with a Nb composition smalle... | 05/06/2008 |
| 7291530 | Semiconductor storage device and method of manufacturing the same A method of manufacturing a semiconductor storage device having a capacitive element having a dielectric layer having a perovskite-type crystal structure represented by general formula ABO3 and a lower electrode and an upper electrode disposed so as to sa... | 11/06/2007 |
| 7125742 | Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation la... | 10/24/2006 |
| 6703655 | Ferroelectric memory transistor A ferroelectric memory transistor includes a substrate having active regions therein; a gate stack, including: a high-k insulator element, including a high-k cup and a high-k cap; a ferroelectric element, wherein said ferroelectric element is encapsulated... | 03/09/2004 |
| 6699725 | Methods of fabricating ferroelectric memory devices having a ferroelectric planarization layer In the present invention, ferroelectric memory devices using a ferroelectric planarization layer and methods of fabricating the same are disclosed. According to the method of the present invention, a conductive layer is formed on an interlayer insulation ... | 03/02/2004 |
| 6696363 | Method of and apparatus for substrate pre-treatment The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus incl... | 02/24/2004 |
| 6693318 | Reduced diffusion of a mobile specie from a metal oxide ceramic A barrier layer is provided to prevent the diffusion of excess mobile specie from a metal oxide ceramic into the substrate. The barrier layer is provided below the metal oxide ceramic, separating it from the substrate below.... | 02/17/2004 |
| 6693033 | Method of removing an amorphous oxide from a monocrystalline surface A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxid... | 02/17/2004 |
| 6686236 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the decreases a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. In the above manner, a fatigue resista... | 02/03/2004 |
| 6682973 | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfa... | 01/27/2004 |
| 6673664 | Method of making a self-aligned ferroelectric memory transistor A method of making a self-aligned ferroelectric memory transistor includes preparing a substrate, shallow trench isolation, n the polysilicon; and forming a gate stack, including: depositing a layer of silicon nitride; selectively etching the silicon nitr... | 01/06/2004 |
| 6667215 | Method of making transistors A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features... | 12/23/2003 |
| 6667196 | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer ... | 12/23/2003 |
| 6663989 | Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a per... | 12/16/2003 |
| 6664115 | Metal insulator structure with polarization-compatible buffer layer An MIS device (20) includes a semiconducting substrate (22), a silicon nitride buffer layer (24), a ferroelectric metal oxide superlattice material (26), and a noble metal top electrode (28). The layered superlattice material (26) is preferably a strontiu... | 12/16/2003 |
| 6664116 | Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; deposi... | 12/16/2003 |
| 6660535 | Method of forming haze- free BST films Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientatio... | 12/09/2003 |
| 6660536 | Method of making ferroelectric material utilizing anneal in an electrical field A ferroelectric thin film precursor material is annealed while in an electric field. The electric field is maintained as the material cools. A partially completed integrated circuit with a ferroelectric thin film precursor material may be placed between t... | 12/09/2003 |
| 6660414 | Tungsten-doped thin film materials A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Bax... | 12/09/2003 |
| 6656748 | FeRAM capacitor post stack etch clean/repair The present invention is directed to a method of forming an FeRAM integrated circuit, which includes performing a capacitor stack etch to define the FeRAM capacitor. The method comprises etching a PZT ferroelectric layer with a high temperature BCl3 | 12/02/2003 |
| 6653156 | Ferroelectric device with capping layer and method of making same A ferroelectric device includes a ferroelectric layer and an electrode. The ferroelectric material is made of a perovskite or a layered superlattice material. A superlattice generator metal oxide is deposited as a capping layer between said ferroelectric ... | 11/25/2003 |
| 6649424 | Method for fabricating an integrated semiconductor circuit having a strongly polarizable dielectric or ferroelectric A method of fabricating semiconductor circuits having integrated capacitors that have a dielectric or a ferroelectric material between electrodes. The materials are subjected to heat treatment at high temperatures in an oxygen atmosphere for the purpose o... | 11/18/2003 |
| 6645881 | Method of forming coating film, method of manufacturing semiconductor device and coating solution A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.... | 11/11/2003 |
| 6645805 | Method for forming dielectric film of capacitor A method for forming a dielectric film of a capacitor includes injecting a first source containing a first component into a reaction chamber to be adsorbed on a surface of a substrate, purging residual first source out of the reaction chamber, injecting a... | 11/11/2003 |
| 6643117 | Ferro-electric capacitor and method of fabrication of the ferro-electric capacitor A ferro-electric capacitor comprising a first electrode comprising at least a layer of a conductive oxide having at least two sub-layers of individual grains, wherein individual grains of a top sub-layer of the two sub-layers are oriented randomly. The ca... | 11/04/2003 |
| 6642066 | Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer An apparatus and a method of depositing a dielectric material film, including steps of initiating a process of depositing a dielectric material film under at least one controllable initial condition in an apparatus comprising a dielectric material deposit... | 11/04/2003 |
| 6642573 | Use of high-K dielectric material in modified ONO structure for semiconductor devices A process for fabrication of a semiconductor device including a modified ONO structure, comprising forming the modified ONO structure by providing a semiconductor substrate; forming a first dielectric material layer on the semiconductor substrate; deposit... | 11/04/2003 |
| 6642591 | Field-effect transistor A field-effect transistor includes a silicon substrate on which is formed a channel region, a source region and a drain region. A gate insulation layer of a transition metal oxide having a perovskite structure is formed over at least the channel region, a... | 11/04/2003 |
| 6639267 | Capacitor dielectric having perovskite-type crystalline structure A capacitor construction includes an inner electrode, an inner dielectric layer over the inner electrode, an outer dielectric layer over the inner dielectric layer, and an outer electrode over the outer dielectric layer. The inner dielectric layer can inc... | 10/28/2003 |
| 6638880 | Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provid... | 10/28/2003 |
| 6639262 | Metal oxide integrated circuit on silicon germanium substrate Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a ... | 10/28/2003 |
| 6635497 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the decreases a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. In the above manner, a fatigue resista... | 10/21/2003 |
| 6630393 | Semiconductor device manufacturing method and semiconductor device manufacturing by the same method A method for manufacturing a high dielectric constant insulating film made of a metal oxide on a silicon substrate is provided using a material gas mixture containing an oxidizing agent without forming silicon oxide layer on a silicon substrate. The manuf... | 10/07/2003 |
| 6623988 | Method for fabricating ferroelectric capacitor of semiconductor device A method for fabricating a ferroelectric capacitor of a semiconductor device is disclosed. This method carries out a patterning process of a capacitor electrode, which is difficult to handle in a dry etching process, with a lift-off method using a negativ... | 09/23/2003 |
| 6624462 | Dielectric film and method of fabricating the same A Pt/Ti film is formed on a substrate, and the Pt/Ti film is patterned in to a bottom electrode. Subsequently, a SrTiO3 film, that is, a dielectric film, is formed on the substrate by sputtering using a mixture of an Ar gas, an O2 ga... | 09/23/2003 |
| 6617209 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so th... | 09/09/2003 |
| 6617609 | Organic thin film transistor with siloxane polymer interface Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor ... | 09/09/2003 |
| 6616857 | C-axis oriented lead germanate film A ferroelectric Pb5 Ge3 O11 (PGO) thin film is provided with a metal organic vapor deposition (MOCVD) process and RTP (Rapid Thermal Process) annealing techniques. The PGO film is substantially crystallization with c-axis ... | 09/09/2003 |
| 6617266 | Barium strontium titanate annealing process A process for forming high k dielectric thin films on a substrate, e.g., silicon, by 1) low temperature (500° C. or less) deposition of a dielectric material onto a surface, followed by 2) high temperature post-deposition annealing. The deposition can ta... | 09/09/2003 |
