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| Number | Title | Issue Date |
| 7439154 | Method of fabricating interconnect structure A method for fabricating an interconnect structure is described. A substrate with a conductive part thereon is provided, a first porous low-k layer is formed on the substrate, and then a first UV-curing step is conducted. A damascene structure is formed in the first... | 10/21/2008 |
| 7416955 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device, includes forming a first insulating film containing silicon oxide as a main ingredient, on an underlying region, adhering water to the first insulating film, forming a polymer solution layer containing a silicon-cont... | 08/26/2008 |
| 7410916 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection... | 08/12/2008 |
| 7407895 | Process for producing dielectric insulating thin film, and dielectric insulating material Provided is a method for producing, in a simple manner, a general-purpose dielectric insulating thin film that has a varying dielectric constant and accepts an accurate film thickness control and a control of the composition, the structure and the thickness thereof.... | 08/05/2008 |
| 7294909 | Electronic package repair process A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and th... | 11/13/2007 |
| 7265009 | HDP-CVD methodology for forming PMD layer A method of forming an HDP-CVD pre-metal dielectric (PMD) layer to reduce plasma damage and/or preferential sputtering at a reduced a thermal budget including providing a semiconductor substrate comprising at least two overlying semiconductor structures separated by... | 09/04/2007 |
| 7160819 | Method to perform selective atomic layer deposition of zinc oxide A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes is... | 01/09/2007 |
| 7141503 | Methods for manufacturing a soft error and defect resistant pre-metal dielectric layer A method for forming a pre-metallization layer on an underlying micro-structure, and a corresponding micro-structure formed by the method. The micro-structure may be a semiconductor circuit and/or a Micro-Electro-Mechanical Systems (MEMS) device. A first layer of un... | 11/28/2006 |
| 6899857 | Method for forming a region of low dielectric constant nanoporous material using a microemulsion technique A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of preparing a microemulsion. The method of the present embodiment then recites applying the microemulsion to a surface... | 05/31/2005 |
| 6699799 | Method of forming a semiconductor device A method of forming a semiconductor device includes a liner is conformally stacked on a semiconductor substrate before coating an SOG layer thereon, and then curing the SOG layer, preferably in an ambient of oxygen radicals formed at a temperature of 1000... | 03/02/2004 |
| 6696363 | Method of and apparatus for substrate pre-treatment The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus incl... | 02/24/2004 |
| 6670231 | Method of forming a dielectric layer in a semiconductor device Semiconductor devices that utilize a silicon-containing dielectric layer are disclosed. In one embodiment, a silicon-containing material is deposited on a substrate. The deposited material is processed with a reactive agent to react with silicon atoms of ... | 12/30/2003 |
| 6660615 | Method and apparatus for growing layer on one surface of wafer A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bot... | 12/09/2003 |
| 6653718 | Dielectric films for narrow gap-fill applications A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallo... | 11/25/2003 |
| 6645882 | Preparation of composite high-K/standard-K dielectrics for semiconductor devices A semiconductor device and a method of fabricating the semiconductor device having a composite dielectric layer including steps of providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric ... | 11/11/2003 |
| 6638358 | Method and system for processing a semiconductor device The present invention is a method and system for processing a semiconductor device, the semiconductor device comprising at least two gate stacks and a spacer gap. The method and system comprise utilizing a spin-on technique at the transistor device level ... | 10/28/2003 |
| 6617264 | SOG materials for spacer anodic bonding and method of preparing the same Disclosed herein is an SOG (Spin on Glass) material for spacer anodic bonding, which includes: 0.1~3 wt % of tetraethyl orthosilicate (TEOS); 0.1~5 wt % of methyl triethyl orthosilicate (MTEOS); 20~30 wt % of ethanol; 0.1~2 wt % of acetic acid solution ... | 09/09/2003 |
| 6613697 | Low metallic impurity SiO based thin film dielectrics on semiconductor substrates using a room temperature wet chemical growth process, method and applications thereof Disclosed is a method for making low metallic impurity SiO-based dielectric thin films on semiconductor substrates using a room temperature wet chemical growth (RTWCG) process for electronic and photonic (optoelectronic) device applications. The process c... | 09/02/2003 |
| 6607991 | Method for curing spin-on dielectric films utilizing electron beam radiation An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography... | 08/19/2003 |
| 6599846 | Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film w... | 07/29/2003 |
| 6584807 | Method of fabricating a component with crystalline silicon substrate A method of fabricating a component having a crystalline silicon substrate includes the steps of depositing a layer of silica onto a crystalline silicon substrate, this silica layer being doped with dopants, and then treating the substrate. Before the dop... | 07/01/2003 |
| 6576053 | Method of forming thin film using atomic layer deposition method In a method of forming a thin film using an atomic layer deposition (ALD) method, a thin film is formed on a substrate in cycles. Each cycle includes injecting a first reactant including an atom that forms the thin film and a ligand into a reaction chambe... | 06/10/2003 |
| 6572974 | Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins Changes in the infrared reflection spectrum of a thin film of silica-like resinous material sandwiched between metal electrodes can be induced by applying an electric potential to a top electrode which is semitransparent. Characteristic infrared absorptio... | 06/03/2003 |
| 6541373 | Manufacture method for semiconductor with small variation in MOS threshold voltage After a MOS type transistor is formed on the surface of a semiconductor substrate, an interlayer insulating film covering the transistor is formed. The insulating film includes a silicon oxide film made of hydrogen silsesquioxane resin in a ceramic state.... | 04/01/2003 |
| 6532772 | Formation of planar dielectric layers using liquid interfaces A method and apparatus for forming a planar layer on a surface of a microelectronic substrate. The method comprises controlling a temperature of a liquid support material to be at least an annealing temperature of material comprising the planar layer. In ... | 03/18/2003 |
| 6528397 | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent... | 03/04/2003 |
| 6517911 | Process for the formation of silicon oxide films There is provided a process for forming a silicon oxide film which is useful as an electrical insulating film, dielectric film or protective film as used in LSI, thin-film transistor, photoelectric converter, photosensitive body and the like. The process ... | 02/11/2003 |
| 6509386 | Porous insulating compounds and method for making same A method of forming a porous insulating composition comprising the steps of (A) providing at least one organic sacrificial material/dielectric material composition comprising at least one organic sacrificial material and at least one dielectric material; ... | 01/21/2003 |
| 6509281 | Techniques for improving adhesion of silicon dioxide to titanium The present invention is described in several embodiments depicting structures and methods to form these structures. A first embodiment is a structure having a silicon dioxide film bonded to a metal film comprising: a metal nitride film bonded to the meta... | 01/21/2003 |
| 6503633 | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and hav... | 01/07/2003 |
| 6503849 | Method for forming insulating film A method for forming an insulating film, wherein a precursor film of a coating type insulating film having Si--H bonding is coated, the precursor film is calcined in an atmosphere containing at least one of an inert gas and oxygen gas for converting it in... | 01/07/2003 |
| 6489252 | Method of forming a spin-on-glass insulation layer A method of forming a SOG insulation layer of a semiconductor device comprises the steps of forming the SOG insulation layer on a substrate having a stepped pattern using a solution containing a polysilazane in an amount of less than 20% by weight in term... | 12/03/2002 |
| 6482751 | Titanium dioxide layer serving as a mask and its removed method A titanium dioxide layer serving as a mask used in a manufacturing process of integrated circuit and its removed method are disclosed. The method includes the steps of forming a titanium dioxide layer on the integrated circuit device to serve as a mask, a... | 11/19/2002 |
| 6479405 | Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method A method of forming a silicon oxide layer of a semiconductor device comprising coating a spin-on glass (SOG) composition including perhydropolysilazane having a compound of the formula (SiH2 NH2)n where n represents a posi... | 11/12/2002 |
| 6472750 | Process for realizing an intermediate dielectric layer for enhancing the planarity in semiconductor electronic devices A method is for forming an intermediate dielectric layer to optimize the planarity of electronic devices integrated on a semiconductor which incorporate non-volatile memories. The insulating dielectric is deposited from a liquid state source comprising si... | 10/29/2002 |
| 6465368 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film A method of manufacturing an insulating film-forming material comprising dissolving an inorganic polymer compound or an organic polymer compound in an organic solvent having a solubility in water of 100 g/100 cc or less at 20° C., and causing the solutio... | 10/15/2002 |
| 6461982 | Methods for forming a dielectric film A method of forming a high dielectric oxide film includes forming a high dielectric oxide film on a surface. The high dielectric oxide film has a dielectric constant greater than about 4 and includes a plurality of oxygen vacancies present during the form... | 10/08/2002 |
| 6458713 | Method for manufacturing semiconductor device A method of forming a film, which comprises the steps of coating a liquid raw material comprising a precursor of film-forming material dissolved in a solvent, on a surface of substrate, and forming a solid film on the surface of substrate by subjecting th... | 10/01/2002 |
| 6448190 | Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid A thin film of solid material is selectively formed during fabrication of an integrated circuit by applying a liquid precursor to a substrate having a first surface and a second surface and treating the liquid precursor. The first surface has different ph... | 09/10/2002 |
| 6448175 | Method for forming insulating thin films To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesqui... | 09/10/2002 |
