Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 7439177 | Method of manufacturing semiconductor device for improving contact hole filling characteristics while reducing parasitic capacitance of inter-metal dielectric In manufacturing a semiconductor device, a metal film is formed on a semiconductor substrate, and a high-temperature amorphous carbon film pattern for defining a wiring forming area is formed on the metal film. The metal film is etched by using the high-temperature ... | 10/21/2008 |
| 7427563 | Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures The present invention is directed to improved dielectric copper barrier layer and related interconnect structures. One structure includes a semiconductor substrate having a copper line. An insulating layer formed of at least one of silicon and carbon is formed on th... | 09/23/2008 |
| 7427807 | Chip heat dissipation structure and manufacturing method This invention discloses a manufacturing method and a structure for a chip heat dissipation. This heat dissipation structure includes a bottom plate of circuit structure, a die of central processing unit and a cap. The cover is often used in conducting the waste hea... | 09/23/2008 |
| 7390947 | Forming field effect transistors from conductors A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least t... | 06/24/2008 |
| 7341957 | Masking structure having multiple layers including amorphous carbon layer A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide ... | 03/11/2008 |
| 7335610 | Ultraviolet blocking layer Semiconductor structures and methods of fabricating semiconductor structures are disclosed. The method comprises the steps of: providing an initial semiconductor structure; forming a non-silicon layer overlying the initial semiconductor structure, the non-silicon la... | 02/26/2008 |
| 7148156 | Removable amorphous carbon CMP stop A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the ... | 12/12/2006 |
| 7129180 | Masking structure having multiple layers including an amorphous carbon layer A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide ... | 10/31/2006 |
| 7115993 | Structure comprising amorphous carbon film and method of forming thereof A semiconductor device includes a semiconductor substrate, a film stack formed on the semiconductor substrate and having a film to be processed. A dual hard mask included in the film stack has an amorphous carbon layer and an underlying hard mask layer interposed be... | 10/03/2006 |
| 6635575 | Methods and apparatus to enhance properties of Si-O-C low K films A method for providing a dielectric film having enhanced adhesion and stability. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is part... | 10/21/2003 |
| 6632478 | Process for forming a low dielectric constant carbon-containing film An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbo... | 10/14/2003 |
| 6630396 | Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon A plasma enhanced chemical vapor deposition (PECVD) process is provided for depositing one or more dielectric material layers on a substrate for use in interconnect structures of integrated circuits. The method comprises the steps of depositing a fluorina... | 10/07/2003 |
| 6576520 | Amorphous carbon layer for improved adhesion of photoresist and method of fabrication An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer, formed on the surface of the substrate, and a ... | 06/10/2003 |
| 6541397 | Removable amorphous carbon CMP stop A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one a... | 04/01/2003 |
| 6524974 | FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS An improvement in the formation of low dielectric constant carbon-containing silicon oxide dielectric material by reacting a carbon-substituted silane with an oxidizing agent is described, wherein the process is carried out in the presence of a reaction r... | 02/25/2003 |
| 6486559 | COPPER WIRING STRUCTURE COMPRISING A COPPER MATERIAL BURIED IN A HOLLOW OF AN INSULATING FILM AND A CARBON LAYER BETWEEN THE HOLLOW AND THE COPPER MATERIAL IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME The object of the present invention is to provide a copper wiring structure in which finely processed copper wiring in a wiring structure in grooves is steadily formed with a high reliability and a method for fabricating the same, wherein an electroconduc... | 11/26/2002 |
| 6482741 | COPPER WIRING STRUCTURE COMPRISING A COPPER MATERIAL BURIED IN A HOLLOW OF AN INSULATING FILM AND A CARBON LAYER BETWEEN THE HOLLOW AND THE COPPER MATERIAL IN SEMICONDUCTOR DEVICE AND METHOD FABRICATING THE SAME The object of the present invention is to provide a copper wiring structure in which finely processed copper wiring in a wiring structure in grooves is steadily formed with a high reliability and a method for fabricating the same, wherein an electroconduc... | 11/19/2002 |
| 6455430 | Method of embedding contact hole by damascene method A carbon film is formed over an insulating film and a contact hole is defined therein by patterning. Copper is formed over an entire surface including the contact hole and polished by chemical mechanical polishing. The polishing of the copper is terminate... | 09/24/2002 |
| 6444538 | Method for manufacturing a semiconductor memory device using hemispherical grain silicon A semiconductor device for manufacturing a semiconductor memory cell includes the steps of: a) preparing an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating la... | 09/03/2002 |
| 6414377 | Low k dielectric materials with inherent copper ion migration barrier An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an... | 07/02/2002 |
| 6368924 | Amorphous carbon layer for improved adhesion of photoresist and method of fabrication An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer formed on the surface of the substrate, and a r... | 04/09/2002 |
| 6346747 | Method for fabricating a thermally stable diamond-like carbon film as an intralevel or interlevel dielectric in a semiconductor device and device made A method for fabricating a thermally stable carbon-based low dielectric constant film such as a hydrogenated amorphous carbon film or a diamond-like carbon film in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor... | 02/12/2002 |
| 6337518 | Low dielectric constant amorphous fluorinated carbon and method of preparation An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetra... | 01/08/2002 |
| 6277766 | Method of making fullerene-decorated nanoparticles and their use as a low dielectric constant material for semiconductor devices This invention provides a process for making an insulation layer for use in microelectronic devices, whereby capacitive coupling and propagation delay in the microelectronic devices are reduced. This invention can include the formation of a stable solutio... | 08/21/2001 |
| 6251802 | Methods of forming carbon-containing layers In one aspect, the invention includes an etching process, comprising: a) providing a first material over a substrate, the first material comprising from about 2% to about 20% carbon (by weight); b) providing a second material over the first material; and ... | 06/26/2001 |
| 6197706 | Low temperature method to form low k dielectric Black diamond films, deposited using PECVD at low substrate temperatures, have been effectively stabilized by immersing them in de-ionized water at a temperature of about 90° C. for about 20 minutes or in a hydrogen peroxide solution (typically at a conc... | 03/06/2001 |
| 6197704 | Method of fabricating semiconductor device There is provided a method of fabricating a semiconductor device having a multi-layered structure and including an interlayer insulating film composed of carbon family material, the method including the steps of (a) depositing an insulating film on a lowe... | 03/06/2001 |
| 6184572 | Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layer... | 02/06/2001 |
| 6150258 | Plasma deposited fluorinated amorphous carbon films An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layer... | 11/21/2000 |
| 6107168 | Process for passivating a silicon carbide surface against oxygen In the manufacture of semiconductor components, a SiC single crystal is exposed, during storage or transport between two process steps, to an oxygen-containing gas atmosphere, for example air. In order to prevent an oxide coating from forming on the SiC s... | 08/22/2000 |
| 5981000 | Method for fabricating a thermally stable diamond-like carbon film A method for fabricating a thermally stable carbon-based low dielectric constant film such as a hydrogenated amorphous carbon film or a diamond-like carbon film in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor... | 11/09/1999 |
| 5942328 | Low dielectric constant amorphous fluorinated carbon and method of preparation An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetra... | 08/24/1999 |
| 5900290 | Method of making low-k fluorinated amorphous carbon dielectric The invention provides a process for depositing fluorinated amorphous carbon (a-F:C) films on IC wafers to provide a low-k interconnect dielectric material. The process, carried out in a PECVD chamber, introduces silane gas (SiH4) into the mixt... | 05/04/1999 |
| 5776235 | Thick opaque ceramic coatings Thick opaque ceramic coatings are used to protect delicate microelectronic devices against excited energy sources, radiation, light, abrasion, and wet etching techniques. The thick opaque ceramic coating are prepared from a mixture containing phosphoric a... | 07/07/1998 |
| 5707487 | Method of manufacturing semiconductor device According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carb... | 01/13/1998 |
| 5698901 | Semiconductor device with amorphous carbon layer for reducing wiring delay The invention provides a semiconductor device in which interlayer insulative layers are composed of amorphous carbon film. The amorphous carbon film may include fluorine (F) therein. The invention further provides a method of fabricating a semiconductor d... | 12/16/1997 |
| 5683939 | Diamond insulator devices and method of fabrication Semiconductor device and circuits and methods of fabrication which provides multilevel interconnections with grown diamond insulation films and second level resistors in the diamond insulation. The diamond provides both good electrical insulation and good... | 11/04/1997 |
| 5679269 | Diamond-like carbon for use in VLSI and ULSI interconnect systems The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relat... | 10/21/1997 |
| 5674355 | Diamond-like carbon for use in VLSI and ULSI interconnect systems The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relat... | 10/07/1997 |
| 5559367 | Diamond-like carbon for use in VLSI and ULSI interconnect systems The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relat... | 09/24/1996 |
