Class 257/E21.269 - Formed by deposition from a gas or vapor (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.268. This
No. of patents: 167
Last issue date: 10/07/2008

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Number	Title	Issue Date
7432134	Semiconductor device and method of fabricating the same A semiconductor device 100 includes an element-forming region having gate electrode 108 formed therein, and a circumferential region formed in the outer circumference of the element-forming region and having an element-isolating region 118 forme...	10/07/2008
7416994	Atomic layer deposition systems and methods including metal beta-diketiminate compounds The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates. ...	08/26/2008
7408225	Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-...	08/05/2008
7368779	Hemi-spherical structure and method for fabricating the same Hemi-spherical structure and method for fabricating the same. A device includes discrete pillar regions on a substrate, and a pattern layer on the discrete support structures and the substrate. The pattern layer has hemi-spherical film regions on the discrete suppor...	05/06/2008
7361613	Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ...	04/22/2008
7335609	Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing ...	02/26/2008
7314838	Method for forming a high density dielectric film by chemical vapor deposition A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate...	01/01/2008
7247582	Deposition of tensile and compressive stressed materials A method of depositing tensile or compressively stressed silicon nitride on a substrate is described. Silicon nitride having a tensile stress with an absolute value of at least about 1200 MPa can be deposited from process gas comprising silicon-containing gas and ni...	07/24/2007
7214631	Method of forming gate dielectric layer A method for forming a gate dielectric layer is described. A silicon oxide layer is formed on a semiconductor substrate. Then, a first and a second nitrogen doping processes are performed in sequence to the silicon oxide layer using plasma comprising inert gas and g...	05/08/2007
7148157	Use of phoslon (PNO) for borderless contact fabrication, etch stop/barrier layer for dual damascene fabrication and method of forming phoslon A method of forming phoslon (PNO) comprising the following steps. A CVD reaction chamber having a reaction temperature of from about 300 to 600° C. is provided. From about 10 to 200 sccm PH3 gas, from about 50 to 4000 sccm N2 gas and from abou...	12/12/2006
7141500	Methods for forming aluminum containing films utilizing amino aluminum precursors A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: Al(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R...	11/28/2006
6703708	Graded thin films Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of imp...	03/09/2004
6682979	Methods of forming transistors associated with semiconductor substrates The invention encompasses a method of forming an oxide region over a semiconductor substrate. A nitrogen-containing layer is formed across at least some of the substrate. After the nitrogen-containing layer is formed, an oxide region is grown from at leas...	01/27/2004
6680228	Capacitor in semiconductor device In the capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2 O3 film is formed over the TaON film, and an upper ele...	01/20/2004
6677201	Method of fabricating thermal CVD oxynitride and BTBAS nitride sidewall spacer for metal oxide semiconductor transistors A method for using CVD oxynitride and BTBAS nitride during the sidewall formation process in MOS transistor fabrication processes. A silicon oxynitride layer (110) and a silicon nitride layer (120) are used to form sidewalls for MOS transistors. The silic...	01/13/2004
6670284	Method of decontaminating process chambers, methods of reducing defects in anti-reflective coatings, and resulting semiconductor structures A method for fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the anti-reflective coating is to be deposited. The anti-ref...	12/30/2003
6670275	Method of rounding a topcorner of trench A method for pulling back SiN to increase rounding effect in a shallow trench isolation process, includes the steps of preparing a substrate of Si and forming a SiO2 layer on the substrate, forming a Si3 N4 layer on the Si...	12/30/2003
6670695	Method of manufacturing anti-reflection layer An anti-reflection layer and method of manufacture. A silicon substrate has a conductive layer formed thereon. Plasma-enhanced chemical vapor deposition is performed to form a graded silicon oxynitride layer over the conductive layer. During silicon oxyni...	12/30/2003
6664201	Method of manufacturing anti-reflection layer An anti-reflection layer and method of manufacture. A silicon substrate has a conductive layer formed thereon. Plasma-enhanced chemical vapor deposition is performed to form a graded silicon oxynitride layer over the conductive layer. During silicon oxyni...	12/16/2003
6664612	Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials A semiconductor component with passivation includes at least two double passivating layers, of which an uppermost is applied to a planar surface of a layer located therebelow. The double passivating layers include two layers of different dielectric materi...	12/16/2003
6653184	Method of forming transistors associated with semiconductor substrates comprising forming a nitrogen-comprising region across an oxide region of a transistor gate The invention encompasses a method of forming an oxide region over a semiconductor substrate. A nitrogen-containing layer is formed across at least some of the substrate. After the nitrogen-containing layer is formed, an oxide region is grown from at leas...	11/25/2003
6642141	In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene application A structure to enable damascene copper semiconductor fabrication is disclosed. There is a silicon nitride film for providing a diffusion barrier for Cu as well as an etch stop for the duel damascene process. Directly above the silicon nitride film is a si...	11/04/2003
6642157	Film forming method and semiconductor device There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other....	11/04/2003
6627508	Method of forming capacitors containing tantalum The invention pertains to semiconductor circuit components and capacitors, and to methods of forming capacitors and semiconductor circuit components. In one aspect, the invention includes a method of forming a dielectric layer comprising: a) forming a fir...	09/30/2003
6624088	Method of forming low dielectric silicon oxynitride spacer films highly selective to etchants A method of depositing a silicon oxynitride spacer film on a gate stack in a semiconductor device involves contacting the gate stack with bistertiarybutylaminosilane (BTBAS), at least one nitrogen containing compound and oxygen (O2). The deposi...	09/23/2003
6620665	Method for fabricating semiconductor device A process control is performed for fabricating both a wafer for a device including a Ge-containing semiconductor film and a wafer for a device, for example, including no Ge-containing semiconductor film on a common fabrication line. When the wafer includi...	09/16/2003
6596654	Gap fill for high aspect ratio structures Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition pr...	07/22/2003
6576528	Capacitor for semiconductor memory device and method of manufacturing the same Disclosed are a capacitor for semiconductor devices capable of increasing storage capacitance and preventing leakage current, and method of manufacturing the same. The capacitor for semiconductor memory devices according to the present invention includes:...	06/10/2003
6573195	Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere In fabricating a semiconductor device, a hydrogen-containing first insulating film is formed over a semiconductor layer, a gate insulating film and a gate electrode, and a first heat-treatment in a hydrogen atmosphere is performed. A second insulating fil...	06/03/2003
6566281	Nitrogen-rich barrier layer and structures formed The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molec...	05/20/2003
6548899	Method of processing films prior to chemical vapor deposition using electron beam processing A treated substrate produced by a process for treating a dielectric layer on a substrate, which comprises applying a sufficient amount of a liquid dielectric composition onto an upper surface of a semiconductor substrate to thereby form a dielectric layer...	04/15/2003
6541330	Capacitor for semiconductor memory device and method of manufacturing the same Disclosed are a capacitor for semiconductor device capable of increasing storage capacitance and preventing leakage current, and method of manufacturing the same. According to the present invention. A lower electrode is formed on a semiconductor substrate...	04/01/2003
6531372	Method of manufacturing capacitor of semiconductor device using an amorphous TaON The present invention discloses a method of manufacturing a TaON capacitor having a high capacity comprising the steps of forming an intermediate insulating layer on a semiconductor substrate; forming a lower electrode on the intermediate insulating layer...	03/11/2003
6518200	Graded composite layer and method for fabrication thereof Within both a fabrication and a method for fabricating the fabrication there is provided a second layer of a second material separated on one of its sides from a first layer of a first material by a first transition layer of a transition material. The sec...	02/11/2003
6518626	Method of forming low dielectric silicon oxynitride spacer films highly selective of etchants A method of depositing a silicon oxynitride spacer film on a gate stack in a semiconductor device involves contacting the gate stack with bistertiarybutylaminosilane (BTBAS), at least one nitrogen containing compound and oxygen (O2). The deposi...	02/11/2003
6518117	Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over...	02/11/2003
6507081	In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene application A structure to enable damascene copper semiconductor fabrication is disclosed. There is a silicon nitride film for providing a diffusion barrier for Cu as well as an etch stop for the duel damascene process. Directly above the silicon nitride film is a si...	01/14/2003
6503826	Semiconductor device and method for manufacturing the same In an LDD structure MOSFET, a protecting multilayer insulating film is formed to cover a gate electrode in order to protect the gate electrode and the gate oxide film from a moisture included in an upper level layer. The protecting multilayer insulating f...	01/07/2003
6500772	Methods and materials for depositing films on semiconductor substrates A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R--NH)4-n SiXn, wherein...	12/31/2002
6501151	Integrated capacitor with a mixed dielectric An integrated circuit capacitor includes a substrate, a first metal electrode on the substrate, and a dielectric layer on the first metal electrode. The dielectric layer includes a homogeneous combination of at least two dielectric materials having permit...	12/31/2002

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Class 257/E21.269 - Formed by deposition from a gas or vapor (EPO)