Class 257/E21.268 - Of silicon (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.266. This
No. of patents: 265
Last issue date: 08/26/2008

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Number	Title	Issue Date
7416907	Semiconductor device and method for forming the same A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitr...	08/26/2008
7396748	Semiconductor device includes gate insulating film having a high dielectric constant A semiconductor device comprising a semiconductor substrate and a MOSFET provided on the semiconductor substrate, the MOSFET including a gate insulating film and a gate electrode provided on the gate insulating film, wherein the gate insulating film has a higher die...	07/08/2008
7361613	Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ...	04/22/2008
7351668	Film formation method and apparatus for semiconductor process An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a ca...	04/01/2008
7351670	Method for producing silicon nitride films and process for fabricating semiconductor devices using said method Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH	04/01/2008
7297641	Method to form ultra high quality silicon-containing compound layers Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon p...	11/20/2007
7294582	Low temperature silicon compound deposition Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using...	11/13/2007
7279435	Apparatus for stabilizing high pressure oxidation of a semiconductor device A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O ...	10/09/2007
7217612	Manufacturing method for a semiconductor device with reduced local current A semiconductor device including: a first gate insulating film which is pattern-formed on an N type well region within a P type semiconductor substrate; a second gate insulating film which is formed on the semiconductor substrate except for this first gate insulatin...	05/15/2007
7214628	Plasma gate oxidation process using pulsed RF source power A method of fabricating a gate of a transistor device on a semiconductor substrate, includes the steps of placing the substrate in a vacuum chamber of a plasma reactor and introducing into the chamber a process gas that includes oxygen while maintaining a vacuum pre...	05/08/2007
7192887	Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same A method of manufacturing a MOS transistor is provided that achieves high-speed devices by reducing nitrogen diffusion to a silicon substrate interface due to redistribution of nitrogen and further suppressing its diffusion to a polysilicon interface, which prevents...	03/20/2007
7163901	Methods for forming thin film layers by simultaneous doping and sintering A method is provided for forming a thin film layer on a substrate. The method includes the steps of doping a thin surface layer on the substrate with low energy ions of a dopant material, and heating the thin surface layer sufficiently to produce a reaction between ...	01/16/2007
7109131	System and method for hydrogen-rich selective oxidation The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich ox...	09/19/2006
6713780	Process using poly-buffered STI A method of providing a substantially planar trench isolation region having substantially rounded corners, said method comprising the steps of: (a) forming a film stack on a surface of a substrate, said film stack comprising an oxide layer, a polysilicon layer and a...	03/30/2004
6703282	Method of reducing NMOS device current degradation via formation of an HTO layer as an underlying component of a nitride-oxide sidewall spacer A method of forming an NMOS device with reduced device degradation, generated during a constant current stress, has been developed. The reduced device degradation is attributed to the use of a high temperature oxide (HTO), layer, used as an underlying com...	03/09/2004
6703283	Discontinuous dielectric interface for bipolar transistors A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semi...	03/09/2004
6703278	Method of forming layers of oxide on a surface of a substrate A method of forming oxide layers of different thickness on a substrate is described, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a red...	03/09/2004
6699743	Masked nitrogen enhanced gate oxide The present invention provides a method for fabricating improved integrated circuit devices. The method of the present invention enables selective hardening of gate oxide layers and includes providing a semiconductor substrate having a gate oxide layer fo...	03/02/2004
6696360	Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in int...	02/24/2004
6683010	Method for forming silicon-oxynitride layer on semiconductor device A semiconductor device provides improved performance at high integration levels by utilizing a gate insulation layer formed from silicon-oxynitride which prevents impurities in the doped gate electrode from diffusing into the semiconductor substrate durin...	01/27/2004
6680261	Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layer Embodiments of the present invention are directed to a method of reducing boron outgassing at trench power IC's oxidation process for the sacrificial oxide layer whereby the threshold voltage of the power ICs can be improved and the yield of the product c...	01/20/2004
6673668	Method of forming capacitor of a semiconductor memory device A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a f...	01/06/2004
6669825	Method of forming a dielectric film A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals...	12/30/2003
6670231	Method of forming a dielectric layer in a semiconductor device Semiconductor devices that utilize a silicon-containing dielectric layer are disclosed. In one embodiment, a silicon-containing material is deposited on a substrate. The deposited material is processed with a reactive agent to react with silicon atoms of ...	12/30/2003
6667251	Plasma nitridation for reduced leakage gate dielectric layers A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such ...	12/23/2003
6665207	ROM embedded DRAM with dielectric removal/short A ROM embedded DRAM allows hard programming of ROM cells by shorting DRAM capacitor plates during fabrication. In one embodiment, the intermediate dielectric layer is removed and the plates are shorted with a conductor. In another embodiment, an upper con...	12/16/2003
6660659	Plasma method and apparatus for processing a substrate According to one aspect of the invention, a method is provided of processing a substrate, including locating the substrate in a processing chamber, creating a nitrogen plasma in the chamber, the plasma having an ion density of at least 1010 cm	12/09/2003
6656778	Passivation structure for flash memory and method for fabricating same A passivation structure for a semiconductor device includes a high ultraviolet transmittance silicon nitride (UV-SiN) layer. This UV-SiN layer substantially conformally overlies a plurality of top metal lines, which are formed over a semiconductor substra...	12/02/2003
6656789	Capacitor for highly-integrated semiconductor memory devices and a method for manufacturing the same The present invention relates to a capacitor structure suitable for semiconductor devices and a method for manufacturing such capacitors for highly-integrated memory devices using a TaON dielectric layer having a high dielectric constant. The capacitor is...	12/02/2003
6649538	Method for plasma treating and plasma nitriding gate oxides A method for forming a nitrided gate oxide over a silicon substrate in a semiconductor device fabrication process including providing a silicon semiconductor substrate; thermally growing a gate oxide layer including silicon dioxide over the silicon substr...	11/18/2003
6649543	Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices The invention encompasses a method of forming silicon nitride on a silicon-oxide-comprising material. The silicon-oxide-comprising material is exposed to activated nitrogen species from a nitrogen-containing plasma to introduce nitrogen into an upper port...	11/18/2003
6642156	Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectrics A method for forming an ultra thin gate dielectric for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes forming an initial nitride layer upon a substrate by rapidly heating the substrate in the pr...	11/04/2003
6642586	Semiconductor memory capable of being driven at low voltage and its manufacture method A gate insulating film is formed in a partial area of the surface of a semiconductor substrate, and on this gate insulating film, a gate electrode is formed. An ONO film is formed on the side wall of the gate electrode and on the surface of the semiconduc...	11/04/2003
6642573	Use of high-K dielectric material in modified ONO structure for semiconductor devices A process for fabrication of a semiconductor device including a modified ONO structure, comprising forming the modified ONO structure by providing a semiconductor substrate; forming a first dielectric material layer on the semiconductor substrate; deposit...	11/04/2003
6642117	Method for forming composite dielectric layer A method for forming a dielectric layer provides that a oxidizable substrate has formed thereupon a thermal oxide layer in turn having formed thereupon a deposited nitride layer. The deposited nitride/thermal oxide stack layer is then sequentially: (1) an...	11/04/2003
6639228	Method for molecular nitrogen implantation dosage monitoring A method for estimating molecular nitrogen implantation dosage. The semiconductor wafers are first implanted with various concentration of molecular nitrogen. After implantation, the implanted wafers and a non-implanted wafer are subjected to thermal proc...	10/28/2003
6635524	Method for fabricating capacitor of semiconductor memory device A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a nitride la...	10/21/2003
6632747	Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile An embodiment of the present invention is a method of forming an ultra-thin dielectric layer by providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to ...	10/14/2003
6633082	Semiconductor device and method for manufacturing the semiconductor device A semiconductor device is provided and contains a substrate, a first wiring layer, a first oxide film, a dielectric film, a first nitrogen layer, a second wiring layer, a via hole, and a second nitrogen layer. The first wiring layer is formed on the subst...	10/14/2003
6627463	Situ measurement of film nitridation using optical emission spectroscopy A method of nitriding a silicon oxide film according to the present invention includes flowing a nitrogen-containing gas into a substrate processing chamber and forming a plasma from the gas. Optical emissions from the plasma are then measured while a sil...	09/30/2003

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Class 257/E21.268 - Of silicon (EPO)