Celebrity Inventors
Superstar singer Michael Jackson co-patented a "Method and means for creating anti-gravity illusion" in 1993.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 6900481 | Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors A method for forming a transistor includes forming a gate dielectric layer over a portion of a semiconductor substrate, the substrate being substantially free of silicon; defining a gate electrode over a portion of the gate dielectric layer; and introducing ions int... | 05/31/2005 |
| 6693046 | Method of manufacturing semiconductor device having multilevel wiring A method of manufacturing a semiconductor device includes the steps of: (X) forming a first hydrophobic insulating layer above a semiconductor substrate; (Y) hydrophilizing a surface of the first hydrophobic insulating layer; and (Z) forming a low dielect... | 02/17/2004 |
| 6683002 | Method to create a copper diffusion deterrent interface Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.... | 01/27/2004 |
| 6649545 | Photo-assisted remote plasma apparatus and method The present invention provides a plasma processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, an... | 11/18/2003 |
| 6635583 | Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. The same material may also be used as a barrier ... | 10/21/2003 |
| 6630396 | Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon A plasma enhanced chemical vapor deposition (PECVD) process is provided for depositing one or more dielectric material layers on a substrate for use in interconnect structures of integrated circuits. The method comprises the steps of depositing a fluorina... | 10/07/2003 |
| 6614096 | Method for manufacturing a semiconductor device and a semiconductor device Disclosed is a method for manufacturing a semiconductor device, which comprises the steps of forming a first insulating film made of a low dielectric constant material and containing carbon, subjecting the first insulating film to a surface treatment to r... | 09/02/2003 |
| 6597033 | Semiconductor memory device and manufacturing method thereof A semiconductor device of the present invention has a plurality of capacitors having a cylindrical lower electrode which is formed along the side and the bottom surface of a recess formed in an insulator film over a semiconductor substrate and which is ma... | 07/22/2003 |
| 6593653 | Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and is effective in preventing the migration or diffusion of metal or copper atoms through the SiCN layer. The SiCN layer can be used as a diffusion barrier between a metal ... | 07/15/2003 |
| 6589888 | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture of a silicon source, a carbon source, and an inert gas in the presence of an electric field.... | 07/08/2003 |
| 6573191 | Insulating film forming method and insulating film forming apparatus Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the afor... | 06/03/2003 |
| 6558756 | Method of forming interlayer insulating film A material containing, as a main component, an organic silicon compound represented by the following general formula: R1x Si(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl ... | 05/06/2003 |
| 6544901 | Plasma thin-film deposition method As thin-film deposition gases, cyclic C5 F8 gas and a hydrocarbon gas, e.g., C2 H4 gas, are used. These gases are activated as plasma under a pressure of, e.g., 0.1 Torr, to deposit a CF film on a semiconductor ... | 04/08/2003 |
| 6541369 | Method and apparatus for reducing fixed charges in a semiconductor device A method and apparatus for reducing trapped charges in a semiconductor device having a first layer and a second layer, said method comprising the steps of providing said first layer, flowing a deposition, a dilution and a conversion gas upon said first la... | 04/01/2003 |
| 6537733 | Method of depositing low dielectric constant silicon carbide layers A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field.... | 03/25/2003 |
| 6489238 | Method to reduce photoresist contamination from silicon carbide films Silicon carbide layers are often used as hardmask layers in semiconductor processing. The photoresist used to pattern the silicon carbide layers during the hardmask patterning process can become poisoned by the silicon carbide layer and remain attached to... | 12/03/2002 |
| 6465366 | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electri... | 10/15/2002 |
| 6458719 | LOW DIELECTRIC CONSTANT FILM COMPOSED OF BORON, NITROGEN, AND HYDROGEN HAVING THERMAL RESISTANCE, PROCESS FOR FORMING THE FILM, USE OF THE FILM BETWEEN SEMICONDUCTOR DEVICE LAYERS, AND THE DEVICE FORMED FROM THE FILM There is provided a film, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances. The low dielectric constant film having thermal resistance comprises molecules comprising ... | 10/01/2002 |
| 6444568 | Method of forming a copper diffusion barrier A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and is effective in preventing the migration or diffusion of metal or copper atoms through the SiCN layer. The SiCN layer can be used as a diffusion barrier between a metal ... | 09/03/2002 |
| 6436824 | Low dielectric constant materials for copper damascene Novel low dielectric constant materials for use as dielectric in the dual damascene process are provided. A low dielectric constant material dielectric layer is formed by reacting a nitrogen-containing precursor and a substituted organosilane in a plasma-... | 08/20/2002 |
| 6429129 | Method of using silicon rich carbide as a barrier material for fluorinated materials A method of forming interconnect structures in a semiconductor device, comprising the following steps. A semiconductor structure is provided. In the first embodiment, at least one metal line is formed over the semiconductor structure. A silicon-rich carbi... | 08/06/2002 |
| 6399489 | Barrier layer deposition using HDP-CVD A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), eth... | 06/04/2002 |
| 6376048 | Lamination structure, wiring structure, manufacture thereof, and semiconductor device A first layer is disposed on the principal surface of a substrate. An adhesive layer made of Si containing fluorocarbon is disposed on the first layer. A second layer is disposed on the adhesive layer. One of the first and second layers is made of a mater... | 04/23/2002 |
| 6365527 | Method for depositing silicon carbide in semiconductor devices A silicon carbide film is formed in a manner which avoids the high level contents of oxygen by depositing the film in at least two consecutive in-situ steps. Each step comprises plasma enhanced chemical vapor deposition (PECVD) of silicon carbride and amm... | 04/02/2002 |
| 6358316 | Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure In a method for producing a semiconductor device, a compound semiconductor cap layer including no aluminum is grown on a compound semiconductor layer including aluminum, a mask pattern insulating film is formed on a part of the compound semiconductor cap ... | 03/19/2002 |
| 6355574 | Method and device for treating a semiconductor surface The invention concerns a method for treating a surface (2) of a semiconductor (1B) and a corresponding treating device. The surface is made by first molecules of the semiconductor having external bonds saturated with hydrogen. The method consists in sendi... | 03/12/2002 |
| 6306212 | Gallium arsenide semiconductor devices fabricated with insulator layer An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface roughness and crystalline defect problems which, otherwise,... | 10/23/2001 |
| 6262445 | SiC sidewall process The use of silicon carbide to form sidewall spacers allows the use of a lower temperature deposition step, and provides greater etch selectivity with respect to oxide.... | 07/17/2001 |
| 6252295 | Adhesion of silicon carbide films The adhesion of a silicon carbide containing film to a surface is enhanced by employing a transition film of silicon nitride, silicon dioxide and/or silicon oxynitride.... | 06/26/2001 |
| 6251770 | Dual-damascene dielectric structures and methods for making the same A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer... | 06/26/2001 |
| 6228672 | Stable surface passivation process for compound semiconductors A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of met... | 05/08/2001 |
| 6208001 | Gallium arsenide semiconductor devices fabricated with insulator layer An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface roughness and crystalline defect problems which, otherwise,... | 03/27/2001 |
| 6184572 | Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layer... | 02/06/2001 |
| 6150258 | Plasma deposited fluorinated amorphous carbon films An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layer... | 11/21/2000 |
| 6133148 | Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method A method of depositing a thin film for a semiconductor device using a lamp heating type apparatus. In the method, a wafer is loaded into a processing chamber of the apparatus, and the pressure of the chamber and the temperature of a susceptor installed in... | 10/17/2000 |
| 6071780 | Compound semiconductor apparatus and method for manufacturing the apparatus An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped G&As layer and t... | 06/06/2000 |
| 6060384 | Borderless vias with HSQ gap filled patterned metal layers Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O2 -co... | 05/09/2000 |
| 6043167 | Method for forming low dielectric constant insulating film The method for forming an insulating film having a low dielectric constant, which is suitable for intermetal insulating film applications, by plasma enhanced chemical vapor deposition (PECVD) includes the step of supplying a first source gas containing fl... | 03/28/2000 |
| 6004622 | Spin-on-glass process with controlled environment A process for spreading and flowing in a flowable dielectric during manufacture of an integrated circuit resulting in greater planarity and better gap filling ability. The process involves spinning the integrated circuit while controlling evaporation of t... | 12/21/1999 |
| 5989998 | Method of forming interlayer insulating film A material containing, as a main component, an organic silicon compound represented by the following general formula: R1x Si(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl ... | 11/23/1999 |
