Bizarre Patents
A hand wearable body squeegee comprising a glove portion, a concave squeegee band, and a linear squeegee band.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7429789 | Fluoropolymer dielectric composition for use in circuitized substrates and circuitized substrate including same A dielectric composition for forming a dielectric layer usable in circuitized substrates such as PCBs, chip carriers and the like, the composition including at least two fluoropolymers and two inorganic fillers. A circuitized substrate including at least one such di... | 09/30/2008 |
| 7420279 | Carbon containing silicon oxide film having high ashing tolerance and adhesion An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1... | 09/02/2008 |
| 7410914 | Process for producing low-k dielectric films The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m | 08/12/2008 |
| 7405153 | Method for direct electroplating of copper onto a non-copper plateable layer A process for the formation of an interconnect in a semiconductor structure including the steps of forming a dielectric layer on a substrate, forming a first barrier layer on the dielectric layer, forming a second barrier layer on the first barrier layer, wherein th... | 07/29/2008 |
| 7399715 | Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying... | 07/15/2008 |
| 7396749 | Method for contacting parts of a component integrated into a semiconductor substrate The invention relates to a method for contacting parts of a component integrated into a semiconductor substrate (1). According to the inventive method, a first contact hole is produced in an insulating layer (2), said contact hole being then filled wit... | 07/08/2008 |
| 7364942 | Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor depositio... | 04/29/2008 |
| 7345351 | Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device... | 03/18/2008 |
| 7294585 | Compositions for preparing low dielectric materials Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention... | 11/13/2007 |
| 7279728 | Variable capacitance device with high accuracy A capacitance device includes a dielectric film, the first electrode and the second electrode. One of the two electrodes is divided into a plurality of electrode portions. Each of the divided electrode portions is connected with each other through switching transist... | 10/09/2007 |
| 7238626 | Chemically and electrically stabilized polymer films A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacu... | 07/03/2007 |
| 7220614 | Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor depositio... | 05/22/2007 |
| 7135398 | Reliable low-k interconnect structure with hybrid dielectric An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of ... | 11/14/2006 |
| 7122880 | Compositions for preparing low dielectric materials Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention... | 10/17/2006 |
| 6893726 | Substrate coated with silica-containing film with low-dielectric constant A coating liquid for forming a silica-containing film with a low-dielectric constant which enables formation of low-density film having a dielectric constant as low as 3 or less and having excellent resistance to oxygen plasma and process adaptation but also in the ... | 05/17/2005 |
| 6699784 | Method for depositing a low k dielectric film (K>3.5) for hard mask application A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a proces... | 03/02/2004 |
| 6696538 | Semiconductor interlayer dielectric material and a semiconductor device using the same The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properti... | 02/24/2004 |
| 6693046 | Method of manufacturing semiconductor device having multilevel wiring A method of manufacturing a semiconductor device includes the steps of: (X) forming a first hydrophobic insulating layer above a semiconductor substrate; (Y) hydrophilizing a surface of the first hydrophobic insulating layer; and (Z) forming a low dielect... | 02/17/2004 |
| 6677231 | Method for increasing adhesion ability of dielectric material in semiconductor A first dielectric layer 310 is formed on a substrate, wherein the first dielectric layer is a low-K material of an organic polymer. An adhesion promoter is then deposited on the first dielectric layer by chemical vapor deposition to form a first interlay... | 01/13/2004 |
| 6673725 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plas... | 01/06/2004 |
| 6674140 | Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapo... | 01/06/2004 |
| 6667147 | Electronic device manufacture Disclosed are methods of manufacturing electronic devices, particularly integrated circuits. Such methods include the use of low dielectric constant material prepared by using a removable porogen material.... | 12/23/2003 |
| 6667249 | Minimizing coating defects in low dielectric constant films A method of coating a low dielectric constant material layer wherein the wafer surface is pre-wetted using a solvent to prevent or reduce coating defects is described. A semiconductor substrate is provided wherein a top surface of the semiconductor substr... | 12/23/2003 |
| 6663973 | Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepa... | 12/16/2003 |
| 6660391 | Low .kappa. dielectric inorganic/organic hybrid films and method of making A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the fil... | 12/09/2003 |
| 6660822 | Method for forming insulating film between interconnect layers in microelectronic devices The present invention provides a method for forming insulating film between interconnect layers in microelectronic devices, said method comprising the steps of: preparing siloxane-based resins by hydrolyzing and polycondensing the compound represented by ... | 12/09/2003 |
| 6656855 | Deposition method of dielectric films having a low dielectric constant A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.... | 12/02/2003 |
| 6656854 | Method of forming a low dielectric constant film with tetramethylcyclotetrasiloxane (TMCTS) and LPCVD technique In a method for manufacturing a semiconductor device, a semiconductor substrate is provided. On the substrate, conductors spaced apart from one another are formed. Then, an insulating layer is formed on the conductors and the substrate. The insulating lay... | 12/02/2003 |
| 6653719 | Silicone polymer insulation film on semiconductor substrate A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has --SiR2 O-- repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor subst... | 11/25/2003 |
| 6652922 | Electron-beam processed films for microelectronics structures An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam expos... | 11/25/2003 |
| 6654226 | Thermal low k dielectrics An integrated circuit having an electrically insulating layer of an electrically nonconductive material, where the electrically insulating layer is disposed between at least two electrically conductive elements. The electrically nonconductive material is ... | 11/25/2003 |
| 6645881 | Method of forming coating film, method of manufacturing semiconductor device and coating solution A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.... | 11/11/2003 |
| 6646327 | Semiconductor device and semiconductor device manufacturing method The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a subs... | 11/11/2003 |
| 6645883 | Film forming method, semiconductor device and manufacturing method of the same The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposi... | 11/11/2003 |
| 6642157 | Film forming method and semiconductor device There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.... | 11/04/2003 |
| 6639015 | Coating liquid for forming a silica-containing film with a low-dielectric constant A coating liquid for forming a silica-containing film with a low-dielectric constant, which enables the formation of a low-density film having a dielectric constant as low as 3 or less and having excellent resistance to oxygen plasma and process adaptatio... | 10/28/2003 |
| 6630412 | Semiconductor device and method of manufacturing the same In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered ins... | 10/07/2003 |
| 6627533 | Method of manufacturing an insulation film in a semiconductor device A method of manufacturing an insulating film in a semiconductor device is disclosed. The method comprises the steps of forming a SOD film on the entire structure to fill any distance between conductive layer patterns and after performing a curing process,... | 09/30/2003 |
| 6627560 | Method of manufacturing semiconductor device A method of manufacturing an interlayer insulating film that can form an insulating layer having excellent planarization property without using an etch-back process is offered. A method of manufacturing a semiconductor device having a step of forming an i... | 09/30/2003 |
| 6624094 | Method of manufacturing an interlayer dielectric film using vacuum ultraviolet CVD with Xe2 excimer lamp and silicon atoms A method of manufacturing an interlayer dielectric film by vacuum ultraviolet CVD including the steps of placing a wafer in a vacuum chamber having a window; causing a first gas that contains silicon atoms to flow through the vacuum chamber; exposing the ... | 09/23/2003 |
