Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 7407824 | Guard ring for improved matching A semiconductor manufacturing method comprises forming a leveling guard ring defining an interior area into which are fabricated one or more devices. In certain embodiments two or more matched devices, such as in a common centroid layout, are fabricated in the inter... | 08/05/2008 |
| 7396725 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming an insulating layer, a first conductive layer, a dielectric layer and a capping conductive layer over a semiconductor substrate in which a cell region is defined. The capping conductive layer and the ... | 07/08/2008 |
| 7396778 | Method for synthesizing polymeric material, method for forming polymer thin film and method for forming interlayer insulating film A Lewis acid-base reaction is caused, in a solution, between a first monomer corresponding to a Lewis acid and a second monomer corresponding to a Lewis base, so as to generate a monomer adduct in which the first monomer and the second monomer are bonded to each oth... | 07/08/2008 |
| 7382041 | Organic-inorganic composite insulating material for electronic element, method of producing same and field-effect transistor comprising same A method of producing an organic-inorganic composite insulating material for electronic element comprises subjecting a mixture of an organic polymer or its solution and a metal alkoxide or its solution as a starting material to sol-gel reaction of the metal alkoxide... | 06/03/2008 |
| 7361612 | Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers ... | 04/22/2008 |
| 7358597 | UV-activated dielectric layer A dielectric layer on a semiconductor substrate is made porous by radiation with UV light. The dielectric material contains a photosensitive moiety that absorbs UV radiation and dissociates from the dielectric material. The UV-activated material then may be diffused... | 04/15/2008 |
| 7352000 | Organic thin film transistor with polymeric interface Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated cir... | 04/01/2008 |
| 7348283 | Mechanically robust dielectric film and stack A method for forming a mechanically robust dielectric film comprises depositing a dielectric film on a substrate and then inducing a compressive strain in a top surface of the dielectric film to form a compressive strained surface. The compressive strain may be indu... | 03/25/2008 |
| 7329619 | Method for patterning thin film, method and apparatus for fabricating flat panel display Disclosed is a method and apparatus for fabricating a patterned thin film layer within a flat panel display that employs a soft mold and heat treatment in place of a photolithographic process. The disclosed method may reduce process time as well as substantially min... | 02/12/2008 |
| 7319070 | Semiconductor device fabrication method In a conductive layer fabrication method, a lower resist layer (210) is formed on a semiconductor substrate. A water soluble resin layer (212) is formed over the lower resist layer. Heat treatment is performed so as to produce a cross-linking layer ( | 01/15/2008 |
| 7316983 | Film formation apparatus and film formation method and cleaning method The purpose of the invention is to provide a film formation apparatus capable of forming an EL layer with a high purity and a high density, and a cleaning method. The invention is a formation of an EL layer with a high density by heating a substrate 10 by a h... | 01/08/2008 |
| 7304000 | Photoresist trimming process A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthenin... | 12/04/2007 |
| 7288488 | Method for resist strip in presence of regular low k and/or porous low k dielectric materials A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric ma... | 10/30/2007 |
| 7253012 | Guard ring for improved matching A semiconductor manufacturing method comprises forming a leveling guard ring defining an interior area into which are fabricated one or more devices. In certain aspects, two or more matched devices, such as in a common centroid layout, are fabricated in the interior... | 08/07/2007 |
| 7253110 | Method and apparatus for forming a barrier metal layer in semiconductor devices A method and apparatus for forming a barrier metal layer in semiconductor devices are disclosed. A disclosed method for forming a barrier metal layer in a semiconductor device forms an interlayer insulating layer on a front face of a semiconductor substrate having a... | 08/07/2007 |
| 7247555 | Method to control dual damascene trench etch profile and trench depth uniformity A method of forming trench openings in a dual damascene trench and via etch process by using a two component hard mask layer, termed a bi-layer, over different intermetal dielectrics, IMD, to solve dual damascene patterning problems, such as, fencing and sub-trench ... | 07/24/2007 |
| 7226873 | Method of improving via filling uniformity in isolated and dense via-pattern regions An isotropic-diffusion filling method uses a thermal process on a result structure comprising a photoresist layer and an organic material layer to create a cross-linking layer there between, which minimizes step height differences between isolated and dense via-patt... | 06/05/2007 |
| 7199062 | Method for forming a resist film on a substrate having non-uniform topography A preferred embodiment of the invention provides a method of spin coating a liquid, such as a resist, onto a surface of a substrate. An embodiment of the invention comprises dispensing a liquid onto the surface; spinning the substrate at a first rotational velocity ... | 04/03/2007 |
| 7166546 | Planarization for integrated circuits A method of planarizing a layer of an integrated circuit. In one embodiment, a liquid film is applied over the layer, using extrusion coating techniques. In another embodiment, the layer itself may be applied as a liquid film, using extrusion techniques. ... | 01/23/2007 |
| 7135398 | Reliable low-k interconnect structure with hybrid dielectric An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of ... | 11/14/2006 |
| 7119009 | Semiconductor device with dual damascene wiring A semiconductor device having: an underlie having a conductive region in the surface layer of the underlie; an insulating etch stopper film covering the surface of the underlie; an interlayer insulating film formed on the insulating etch stopper film; a wiring trenc... | 10/10/2006 |
| 7041910 | Emissive, high charge transport polymers The present invention generally relates to stable emissive aggregates of polymers. The aggregates are composed of various polymer molecules arranged in such a way as to allow extended electronic couplings between nearby polymer molecules, enhancing exciton transport... | 05/09/2006 |
| 6703323 | Method of inhibiting pattern collapse using a relacs material A method of inhibiting pattern collapse using relacs (resist enhancement lithography assisted by chemical shrink) is disclosed herein. More particularly, the present invention relates to a method of forming photoresist patterns by coating relacs material ... | 03/09/2004 |
| 6699531 | Plasma treatment method In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450° C. At this time, a F gas is released from the CF film, ... | 03/02/2004 |
| 6699784 | Method for depositing a low k dielectric film (K>3.5) for hard mask application A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a proces... | 03/02/2004 |
| 6693345 | Semiconductor wafer assemblies comprising photoresist over silicon nitride materials In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; ... | 02/17/2004 |
| 6685983 | Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices s... | 02/03/2004 |
| 6682989 | Plating a conductive material on a dielectric material A surface may be selectively coated with a polymer using an induced surface grafting or polymerization reaction. The reaction proceeds in those regions that are polymerizable and not in other regions. Thus, a semiconductor structure having organic regions... | 01/27/2004 |
| 6679997 | Organic insulation film formation method The present invention enables reduction of a film thickness of a protection film so as to eliminate destruction caused by stress of the protection film; to increase a film thickness of an organic insulation film so as to exhibit the function of the organi... | 01/20/2004 |
| 6677099 | Positive type photosensitive polyimide resin composition A positive type photosensitive resin composition which can be developed by an aqueous alkaline solution and which is excellent in the developability and the adhesion to a substrate, is presented. Namely, the present invention presents a positive type phot... | 01/13/2004 |
| 6677252 | Methods for planarization of non-planar surfaces in device fabrication A method of planarizing a surface of a wafer includes providing a planarization material on the wafer surface and bringing a substantially flat surface into contact with the planarization material on the wafer. The planarization material is exposed to rad... | 01/13/2004 |
| 6667249 | Minimizing coating defects in low dielectric constant films A method of coating a low dielectric constant material layer wherein the wafer surface is pre-wetted using a solvent to prevent or reduce coating defects is described. A semiconductor substrate is provided wherein a top surface of the semiconductor substr... | 12/23/2003 |
| 6663973 | Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepa... | 12/16/2003 |
| 6664200 | Method of manufacturing a semiconductor component and polyimide etchant therefor A method of manufacturing a semiconductor component having a layer (240, 340) comprised of polyimide includes using an etchant that is at least partially composed of aminopropanediol to etch the layer comprised of polyimide. The etchant can also include a... | 12/16/2003 |
| 6663713 | Method and apparatus for forming a thin polymer layer on an integrated circuit structure A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into rea... | 12/16/2003 |
| 6656313 | Structure and method for improved adhesion between two polymer films A method for improving the adhesion between polyimide layers and the structure formed by the method. A silicon oxide-containing layer is formed on the surface of a polyimide layer and a second layer of polyimide is formed on the silicon oxide-containing l... | 12/02/2003 |
| 6656837 | Method of eliminating photoresist poisoning in damascene applications A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on th... | 12/02/2003 |
| 6656532 | Layered hard mask and dielectric materials and methods therefor A damascene structure includes a hard mask layer that is applied in a liquid phase to a line dielectric layer. Contemplated hard mask layers comprise a Si--N bond and are densified such that the etch resistivity of the hard mask layer is greater than the ... | 12/02/2003 |
| 6653358 | Composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matri... | 11/25/2003 |
| 6645881 | Method of forming coating film, method of manufacturing semiconductor device and coating solution A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.... | 11/11/2003 |
