Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 7405168 | Plural treatment step process for treating dielectric films A method and computer readable medium for treating a dielectric film on one or more substrates includes disposing the one or more substrates in a process chamber configured to perform plural treatment processes on a dielectric film. The dielectric film is formed on ... | 07/29/2008 |
| 7396724 | Dual-hybrid liner formation without exposing silicide layer to photoresist stripping chemicals Methods of fabricating a semiconductor device including a dual-hybrid liner in which an underlying silicide layer is protected from photoresist stripping chemicals by using a hard mask as a pattern during etching, rather than using a photoresist. The hard mask preve... | 07/08/2008 |
| 7323729 | Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus therefor A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant such as dichlo... | 01/29/2008 |
| 7312138 | Semiconductor device and method of manufacture thereof A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode i... | 12/25/2007 |
| 7262142 | Semiconductor device fabrication method The semiconductor device fabrication method comprises the step of forming a first porous insulation film 38 over a semiconductor substrate 10; the step of forming a second insulation film 40 whose density is higher than that of the first porous ... | 08/28/2007 |
| 7223705 | Ambient gas treatment of porous dielectric A method of modifying the porosity of a thickness of a layer of porous dielectric material having a surface and formed on a semiconductor substrate is provided by exposing the porous dielectric material to a sufficient temperature in the presence of a first gas to d... | 05/29/2007 |
| 6846757 | Dielectric layer for a semiconductor device and method of producing the same A semiconductor device includes a low dielectric constant insulating film exhibiting an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein... | 01/25/2005 |
| 6703317 | Method to neutralize charge imbalance following a wafer cleaning process A method of reducing an electrical charge imbalance on a wafer process surface including providing a semiconductor wafer having a process surface including an upper most first material layer; cleaning the process surface according to a wafer cleaning proc... | 03/09/2004 |
| 6699531 | Plasma treatment method In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450° C. At this time, a F gas is released from the CF film, ... | 03/02/2004 |
| 6693046 | Method of manufacturing semiconductor device having multilevel wiring A method of manufacturing a semiconductor device includes the steps of: (X) forming a first hydrophobic insulating layer above a semiconductor substrate; (Y) hydrophilizing a surface of the first hydrophobic insulating layer; and (Z) forming a low dielect... | 02/17/2004 |
| 6689701 | Method of forming a spin on glass film of a semiconductor device The present invention discloses a method of forming a spin on glass film which can prevent a shift of the threshold voltage of a device by curing the spin on glass film with an electron beam of energy of 6-7 kV.... | 02/10/2004 |
| 6683005 | Method of forming capacitor constructions The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material t... | 01/27/2004 |
| 6679951 | Metal anneal with oxidation prevention The invention relates generally to the prevention of copper oxidation during copper anneal processes. In one aspect of the invention, copper oxidation is prevented by carrying out the anneal in the presence of one or more organic reducing agents.... | 01/20/2004 |
| 6680262 | Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming a dielectric layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of tha... | 01/20/2004 |
| 6669825 | Method of forming a dielectric film A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals... | 12/30/2003 |
| 6653247 | Dielectric layer for a semiconductor device and method of producing the same A semiconductor device includes a low dielectric constant insulating film exhibiting an Si--H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, a... | 11/25/2003 |
| 6652922 | Electron-beam processed films for microelectronics structures An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam expos... | 11/25/2003 |
| 6649545 | Photo-assisted remote plasma apparatus and method The present invention provides a plasma processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, an... | 11/18/2003 |
| 6640840 | Delivery of liquid precursors to semiconductor processing reactors This invention relates to methods and apparatus for delivering liquid precursors to semi-conductor processing apparatus. The liquid precursor delivery system is generally indicated at (10) and includes a source (11), an inlet tube (12), a two-way valve (1... | 11/04/2003 |
| 6620745 | Method for forming a blocking layer A method is provided for forming a blocking layer in a multilayer semiconductor device for blocking diffusion of a chemical species including the steps of providing an insulating layer including a target surface for forming a metal nitride layer thereon s... | 09/16/2003 |
| 6617260 | Method of manufacturing semiconductor device prevented from peeling of wirings from insulating film The present invention provides a manufacturing method of a semiconductor device which does not give rise to peeling of a metal film caused by oxygen held in a interlayer insulating film even when the wafer is subjected to a heat treatment after the metal ... | 09/09/2003 |
| 6613695 | Surface preparation prior to deposition Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the su... | 09/02/2003 |
| 6613702 | Methods of forming capacitor constructions The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material t... | 09/02/2003 |
| 6607991 | Method for curing spin-on dielectric films utilizing electron beam radiation An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography... | 08/19/2003 |
| 6592770 | Method of treating an isulating layer This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water... | 07/15/2003 |
| 6589839 | Dielectric cure for reducing oxygen vacancies A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectri... | 07/08/2003 |
| 6582777 | Electron beam modification of CVD deposited low dielectric constant materials A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor depos... | 06/24/2003 |
| 6583497 | Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one emb... | 06/24/2003 |
| 6576979 | Use of selective oxidation conditions for dielectric conditioning A method for conditioning or repairing a dielectric structure of a semiconductor device structure with selectivity over an adjacent conductive or semiconductive structure of the semiconductor device structure, such as a capacitor dielectric and an adjacen... | 06/10/2003 |
| 6573192 | Dual thickness gate oxide fabrication method using plasma surface treatment A method of forming on a common semiconductor body (substrate) silicon oxide layers of different thicknesses uses plasma treatment on selected portions of an original thermally grown silicon oxide layer. The plasma treated portions are completely etched a... | 06/03/2003 |
| 6573199 | Methods of treating dielectric materials with oxygen, and methods of forming capacitor constructions The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material t... | 06/03/2003 |
| 6563172 | Semiconductor substrate processing method An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direct... | 05/13/2003 |
| 6555487 | Method of selective oxidation conditions for dielectric conditioning A method for conditioning or repairing a dielectric structure of a semiconductor device structure with selectivity over an adjacent conductive or semiconductive structure of the semiconductor device structure, such as a capacitor dielectric and an adjacen... | 04/29/2003 |
| 6546939 | Post clean treatment A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional... | 04/15/2003 |
| 6534358 | Method of fabricating semiconductor device having ferroelectric capacitor An interlayer insulating film, contacts, and wirings are formed on a MOS transistor formed on a silicon substrate. Another interlayer insulating film and contacts are formed thereon. Subsequently, as a first heat treatment, a heat treatment is performed i... | 03/18/2003 |
| 6521545 | Method of a surface treatment on a fluorinated silicate glass film The invention shows a method of a surface treatment on a fluorine silicate glass film. At first a fluorine silicate glass layer is deposited on a semiconductor wafer. Partial fluorine ions in the fluorine silicate glass layer are in-situ removed to form a... | 02/18/2003 |
| 6518205 | Multifunctional reagents for the surface modification of nanoporous silica films A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore... | 02/11/2003 |
| 6503792 | Method for fabricating a patterned metal-oxide-containing layer The damage to edge sections which occurs during the patterning of a metal-oxide-containing layer can be compensated by the deposition of an annealing layer and a subsequent heat treatment step through which a material flow takes place from the annealing l... | 01/07/2003 |
| 6495906 | Simplified process for producing nanoporous silica The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic ... | 12/17/2002 |
| 6486061 | Post-deposition treatment to enhance properties of Si-O-C low K films A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification ge... | 11/26/2002 |
