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| Number | Title | Issue Date |
| 7427559 | Method of reducing the surface roughness of spin coated polymer films According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer ... | 09/23/2008 |
| 7384834 | Semiconductor device and a method of manufacturing the same A semiconductor device and a method of manufacturing such a semiconductor device having a field effect transistor with improved current driving performance (e.g., an increase of drain current) of the field effect transistor comprising the steps of ion implanting an ... | 06/10/2008 |
| 7365000 | Method for fabricating semiconductor device Disclosed is a method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process due to a density difference created by reliance on a thickness of a SOG layer subjected to a curing pr... | 04/29/2008 |
| 7354868 | Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform c... | 04/08/2008 |
| 7344999 | Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substr... | 03/18/2008 |
| 7338909 | Micro-etching method to replicate alignment marks for semiconductor wafer photolithography A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process ... | 03/04/2008 |
| 7270130 | Semiconductor device cleaning employing heterogeneous nucleation for controlled cavitation The present invention provides a method for cleaning semiconductor devices through heterogeneous nucleation of cavitation bubbles. Heterogeneous nucleation is performed by applying sonic energy to a cleaning solution and a phase material in order to remove unwanted ... | 09/18/2007 |
| 7176041 | PAA-based etchant, methods of using same, and resultant structures A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):... | 02/13/2007 |
| 7157415 | Post etch cleaning composition for dual damascene system A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect ... | 01/02/2007 |
| 7125784 | Method of forming isolation film in semiconductor device The present invention relates to a method for forming an isolation film in a semiconductor device. After a trench for isolation is formed, a polymer film is stripped by a post cleaning process using BFN. A pre-treatment cleaning process using only SC-1 is performed ... | 10/24/2006 |
| 6887796 | Method of wet etching a silicon and nitrogen containing material The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous sol... | 05/03/2005 |
| 6703316 | Method and system for processing substrate A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying appara... | 03/09/2004 |
| 6701941 | Method for treating the surface of a workpiece An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide flui... | 03/09/2004 |
| 6703319 | Compositions and methods for removing etch residue A composition suitable for cleaning and methods of cleaning etch residue are provided. The composition includes at least one source of a fluoride ion and at least one organic solvent.... | 03/09/2004 |
| 6703317 | Method to neutralize charge imbalance following a wafer cleaning process A method of reducing an electrical charge imbalance on a wafer process surface including providing a semiconductor wafer having a process surface including an upper most first material layer; cleaning the process surface according to a wafer cleaning proc... | 03/09/2004 |
| 6695926 | Treatment method of semiconductor wafers and the like and treatment system for the same A method of treating semiconductor wafers in a sealed container is provided and includes transferring and vertically placing a plurality of wafers in the container and sealing the container. An inert gas is fed into the sealed container and a quantity of ... | 02/24/2004 |
| 6696326 | Cleaning method to prevent watermarks In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to ... | 02/24/2004 |
| 6696361 | Post-CMP removal of surface contaminants from silicon wafer A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized wat... | 02/24/2004 |
| 6692579 | Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence A method for cleaning a semiconductor structure using vapor phase condensation with a thermally vaporized cleaning agent, a hydrocarbon vaporized by pressure variation, or a combination of the two. In the thermally vaporized cleaning agent process, a semi... | 02/17/2004 |
| 6692976 | Post-etch cleaning treatment The present disclosure relates to a post-etch cleaning treatment for a semiconductor device such as a FeRAM. The treatment comprises providing an etchant comprising both a fluorine compound and a chlorine compound, and applying the etchant to the semicond... | 02/17/2004 |
| 6689645 | Method of surface treatment on the improvement of electrical properties for doped silicon oxides (SiO2) films In the fabrication of gate oxides in IC process, a suitable cleaning/etching process is required to remove the native oxides and reduce surface microroughness in addition to standard RCA cleaning. For ultrathin oxide thickness ( | 02/10/2004 |
| 6683007 | Etching and cleaning methods and etching and cleaning apparatus used therefor An etching/cleaning method makes it possible to effectively remove unnecessary materials on a semiconductor wafer, having a surface peripheral area and a surface device area, without damaging the device area. The semiconductor is rotated in a horizontal p... | 01/27/2004 |
| 6681781 | Methods for cleaning microelectronic substrates using ultradilute cleaning liquids A method of cleaning a surface of an article using cleaning liquids in combination with acoustic energy. Preferably, an ultradilute concentration of a cleaning enhancement substance, such as ammonia gas, is dissolved in a liquid solvent, such as filtered ... | 01/27/2004 |
| 6677286 | Compositions for removing etching residue and use thereof Compositions containing water, an organic dicarboxylic acid, a buffering agent and fluorine source and optionally a water miscible organic solvent are capable of removing etching residue.... | 01/13/2004 |
| 6673757 | Process for removing contaminant from a surface and composition useful therefor Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing aqueous composition comprising a fluoride containing compound; a dicarboxylic acid and/or sa... | 01/06/2004 |
| 6670261 | Production method for annealed wafer There is provided a manufacturing process for an annealed wafer capable of reducing boron contamination occurring while annealing is performed in a state where a wafer surface after cleaning is exposed to a gas in Ar atmosphere to suppress a change in res... | 12/30/2003 |
| 6664611 | Composition and method for cleaning residual debris from semiconductor surfaces A method for removing a dielectric anti-reflective coating (DARC) of silicon oxynitride material from a layer of insulative material which is formed over a substrate in a semiconductor device involves contacting the DARC material with a mixture of tetrame... | 12/16/2003 |
| 6656289 | Method of reducing water spotting and oxide growth on a semiconductor structure The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.... | 12/02/2003 |
| 6656895 | Remover composition A remover composition comprising (a) 100 parts by weight of a composition obtained by adding a cyclic urea compound to water, water-soluble organic solvent, or a mixture of water and water-soluble organic solvent so that the concentration of the cyclic ... | 12/02/2003 |
| 6652666 | Wet dip method for photoresist and polymer stripping without buffer treatment step A wet dip method for photoresist and polymer stripping from a wafer surface without the need for a buffer solvent treatment step is disclosed. In the method, the wafer is first exposed to an etchant solution that is maintained at a temperature of at least... | 11/25/2003 |
| 6652659 | Low species buffered rinsing fluids and method A method of rinsing an electronic substrate recognizes that adding a buffer to a rinsing fluid eliminates fluctuations in the amount of residues on an electronic substrate, and a buffered rinsing fluid is prepared by (a) providing water from a water sourc... | 11/25/2003 |
| 6653233 | Process of providing a semiconductor device with electrical interconnection capability A process of providing a semiconductor device with electrical interconnection capability wherein a sacrificial material is introduced into topographical features of the semiconductor device prior to chemical mechanical polishing so that debris formed duri... | 11/25/2003 |
| 6645311 | Method of reducing water spotting and oxide growth on a semiconductor structure The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.... | 11/11/2003 |
| 6645682 | Thinner for rinsing photoresist and method of treating photoresist layer A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant o... | 11/11/2003 |
| 6641678 | Methods for cleaning microelectronic structures with aqueous carbon dioxide systems A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing ... | 11/04/2003 |
| 6641677 | Method of reducing water spotting and oxide growth on a semiconductor structure The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatmen... | 11/04/2003 |
| 6642142 | Substrate cleaning method and method for producing an electronic device In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed... | 11/04/2003 |
| 6638365 | Method for obtaining clean silicon surfaces for semiconductor manufacturing A method of preparing a silicon surface for a subsequent processing said such as thermal oxidation, or metal silicide formation, via use of a novel wet chemical clean procedure, has been developed. The novel wet chemical clean procedure is comprised of th... | 10/28/2003 |
| 6638145 | Constant pH polish and scrub A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid having a high pH chemis... | 10/28/2003 |
| 6635565 | Method of cleaning a dual damascene structure A method of cleaning a dual damascene structure includes forming a first conductive layer in a substrate. A dielectric layer is formed over the substrate. A dual damascene opening is formed in the dielectric layer to expose the first conductive layer. A H... | 10/21/2003 |
