Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
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| Number | Title | Issue Date |
| 7442639 | Method of forming plug of semiconductor device A method for forming a plug of a semiconductor device according to a preferred embodiment includes forming a metal wiring on a semiconductor substrate, forming an interlayer dielectric layer on the semiconductor substrate having the metal wiring, forming a contact h... | 10/28/2008 |
| 7432208 | Method of manufacturing suspension structure A method of manufacturing a suspension structure including providing a substrate, forming a first photoresist pattern on the substrate, heating the first photoresist pattern to harden it as a sacrificial layer, forming a second photoresist pattern on the substrate a... | 10/07/2008 |
| 7393784 | Method of manufacturing suspension structure and chamber A method of manufacturing a suspension structure including providing a substrate, forming a hole and a sacrificial layer filling the hole on the substrate, forming a patterned photoresist layer on the substrate and the sacrificial layer, the patterned photoresist la... | 07/01/2008 |
| 7342290 | Semiconductor metal contamination reduction for ultra-thin gate dielectrics A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom ... | 03/11/2008 |
| 7335521 | Method for the production of multilayer discs A Method for manufacturing an optical disc substrate comprises a first substrate with at least one structured surface, on which an anti-adhesive layer, preferably carbon, is deposited and first layer on top of said anti-adhesive layer. On a second substrate with a s... | 02/26/2008 |
| 7276447 | Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluoro-carbon based etch process on the workpiece to etch exposed portions of the dielectric layer... | 10/02/2007 |
| 7208428 | Method and apparatus for treating article to be treated A thermal treatment apparatus 1 includes a reaction tube 2 for containing wafers 10 contaminated with organic substances having a heater 12 capable of heating the reaction tube; a first gas supply pipe 13 for carrying oxygen gas in... | 04/24/2007 |
| 7169704 | Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H2) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H2 | 01/30/2007 |
| 6700202 | Semiconductor device having reduced oxidation interface A method and apparatus for reducing oxidation of an interface of a semiconductor device thereby improving adhesion of subsequently formed layers and/or devices is disclosed. The semiconductor device has at least a first layer and a second layer wherein th... | 03/02/2004 |
| 6692579 | Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence A method for cleaning a semiconductor structure using vapor phase condensation with a thermally vaporized cleaning agent, a hydrocarbon vaporized by pressure variation, or a combination of the two. In the thermally vaporized cleaning agent process, a semi... | 02/17/2004 |
| 6676800 | Particle contamination cleaning from substrates using plasmas, reactive gases, and mechanical agitation A method and apparatus for cleaning semiconductor wafers, next generation lithography (NGL) masks, and optical photomasks as well as test wafers and in service NGL and optical masks is disclosed. The method and apparatus utilize reactive gases and gas mix... | 01/13/2004 |
| 6677247 | Method of increasing the etch selectivity of a contact sidewall to a preclean etchant A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the pr... | 01/13/2004 |
| 6676764 | Method for cleaning a substrate in selective epitaxial growth process The present invention discloses a method for cleaning a surface of a substrate where a silicon epitaxial layer will be formed before growing the silicon epitaxial layer in a selective epitaxial growth process. Firstly, a high temperature heating element i... | 01/13/2004 |
| 6667244 | Method for etching sidewall polymer and other residues from the surface of semiconductor devices A method for removing organic and inorganic residues or polymers from the surface of semiconductor devices, with a combination of etchant gasses including water vapor generated using a catalytic moisture generator or CMG. The water vapor is generated by i... | 12/23/2003 |
| 6664179 | Semiconductor device production method and semiconductor device production apparatus A semiconductor device production method that is used to uniformly and efficiently reduce metal oxides produced on metal (copper, for example) which forms electrodes or wirings on a semiconductor device. An object to be treated on which copper oxides are ... | 12/16/2003 |
| 6663792 | Equipment for UV wafer heating and photochemistry The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by h... | 12/16/2003 |
| 6645852 | Process for fabricating a semiconductor device having recess portion A process for fabricating a semiconductor device, which comprises forming a recess portion in an insulating film covering a wiring made of copper or a copper alloy so that the recess portion reaches the wiring, wherein, after forming the recess portion, a... | 11/11/2003 |
| 6642153 | Method for avoiding unetched polymer residue in anisotropically etched semiconductor features A method for plasma treating an anisotropically etched semiconductor feature with improved removal of residual polymeric material including providing a semiconductor wafer having an anisotropically etched feature opening further including an edge portion ... | 11/04/2003 |
| 6638855 | Method of filling contact hole of semiconductor device A method of filling a contact hole of a semiconductor device preceded by dry cleaning for removing a damaged layer resulting from dry etching is provided. The method includes selectively exposing an underlying material layer by a dry etch and dry cleaning... | 10/28/2003 |
| 6629538 | Method for cleaning semiconductor wafers in a vacuum environment A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small cl... | 10/07/2003 |
| 6630399 | Titanium disilicide resistance in pinched active regions of semiconductor devices A method of manufacturing a semiconductor device (2) on a substrate (1), the semiconductor device including an active area (5, 6, 16) in the substrate (1) demarcated by spacers (10-13,20-23) and arranged so as to contact an interconnect (29) including TiS... | 10/07/2003 |
| 6624083 | METHOD FOR REMOVING CONTAMINANT COMPOUNDS RESPECTIVELY HAVING BENZENE RING THEREIN FROM SURFACE OF SI LAYER AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE INCLUDING STEP FOR REMOVING CONTAMINANT COMPOUNDS A method for removing contaminant compounds respectively having a benzene ring therein from the surface of an Si layer, the method containing enter a step for causing the Si layer to contact with the air, oxygen or ozone under a heated condition or a step... | 09/23/2003 |
| 6620251 | Substrate processing method and substrate processing apparatus A closed container composed of a lid body and a lower container are provided in a cover body, and a supply pipe for nitrogen gas is connected to the cover body. A light source unit including UV lamps in the lid body is provided to face a mounting table in... | 09/16/2003 |
| 6593282 | Cleaning solutions for semiconductor substrates after polishing of copper film A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and ... | 07/15/2003 |
| 6588437 | System and method for removal of material Apparatus for removal of material in reactions having limited solubility and diffusion. An exemplary system removes unwanted material from the surface of a semiconductor wafer. A flow apparatus is provided for removal of material from a work piece having ... | 07/08/2003 |
| 6579807 | Method for forming isolation regions on semiconductor device A method for forming an isolation region on a semiconductor substrate with a high yield, comprising partially covering the surface of a semiconductor substrate with an oxidation inhibitor film, depositing a material for side-wall parts on the oxidation in... | 06/17/2003 |
| 6580104 | Elimination of contaminants prior to epitaxy and related structure According to the disclosed method, the surface of a semiconductor wafer is covered by a protective oxide. The semiconductor wafer is then placed in a CVD reactor at a first temperature. Contaminants and the protective oxide are then removed from the surfa... | 06/17/2003 |
| 6568408 | Method and apparatus for removing a liquid from a surface of a rotating substrate A method and an apparatus for removing a liquid, i.e a wet processing liquid, from a surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter besides the liquid also a gaseous substance c... | 05/27/2003 |
| 6566271 | Method of producing a semiconductor surface covered with fluorine Fluorine is deposited on a semiconductor substrate surface according to a novel process. A semiconductor substrate is placed in a reaction chamber and the substrate surface is wetted with water and/or alcohol. A compound containing fluorine is led to the ... | 05/20/2003 |
| 6554950 | Method and apparatus for removal of surface contaminants from substrates in vacuum applications A method and apparatus for removal of volatile contaminants from substrate surfaces before the substrate enters a process chamber. Substrate cleaning is achieved by irradiating the substrate with a low-energy electron beam. The interaction of the electron... | 04/29/2003 |
| 6551409 | Method for removing organic contaminants from a semiconductor surface A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched resi... | 04/22/2003 |
| 6551939 | Plasma surface treatment method and resulting device The present invention provides a method for treating a surface of an object using, for example, a downstream region of a plasma source. The method includes a step of generating a plasma from a gas-C in a plasma source, where the gas-C includes a gas-A and... | 04/22/2003 |
| 6541434 | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phos... | 04/01/2003 |
| 6534412 | Method for removing native oxide A method for removing a native oxide layer using hydrogen to react with the native oxide layer is described. Oxygen atoms in silicon dioxide is replaced to achieve the purpose of native oxide removal. Additionally, laser enhancement is used to lower the r... | 03/18/2003 |
| 6526997 | Dry cleaning method for the manufacture of integrated circuits A method for manufacturing an integrated circuit device. The method includes retrieving an in process substrate comprising one or more particles from an input chamber, which is coupled to a chamber for a robot arm, which is maintained under a predetermine... | 03/04/2003 |
| 6513538 | Method of removing contaminants from integrated circuit substrates using cleaning solutions A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and a... | 02/04/2003 |
| 6514886 | Method for elimination of contaminants prior to epitaxy According to the disclosed method, the surface of a semiconductor wafer is covered by a protective oxide. For example, the protective oxide can be silicon oxide and the semiconductor wafer can be a silicon wafer. The semiconductor wafer is then placed in ... | 02/04/2003 |
| 6494959 | Process and apparatus for cleaning a silicon surface A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamina... | 12/17/2002 |
| 6491764 | Method and apparatus for removing a liquid from a surface of a rotating substrate A method and an apparatus for removing a liquid, i.e a wet processing liquid, from a surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter besides the liquid also a gaseous substance c... | 12/10/2002 |
| 6489590 | Laser removal of foreign materials from surfaces A method of fast and complete laser removal of inorganic and organic foreign material, including particles down to submicron-sizes and atomic contaminants, such as heavy metals and alkaline elements, from a substrate without any damage to the substrate, c... | 12/03/2002 |
