Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 7432120 | Method for realizing a hosting structure of nanometric elements Method for manufacturing a hosting structure of nanometric elements comprising the steps of depositing on an upper surface of a substrate, of a first material, a block-seed having at least one side wall. Depositing on at least one portion of sad surface and on the b... | 10/07/2008 |
| 7297568 | Three-dimensional structural body composed of silicon fine wire, its manufacturing method, and device using same A three-dimensional structure composed of highly-reliable silicon ultrafine wires, a method for producing the three-dimensional structure, and a device including the same are provided. The three-dimensional structure composed of silicon fine wires includes wires ( | 11/20/2007 |
| 7294566 | Method for forming wiring pattern, method for manufacturing device, device, electro-optic apparatus, and electronic equipment A method for forming a wiring pattern according to an aspect of the invention forms a wiring pattern in a certain area on a substrate by using a droplet discharge technique, and includes forming a bank surrounding the certain area on the substrate; discharging a fir... | 11/13/2007 |
| 7192885 | Method for texturing surfaces of silicon wafers A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution. The etching solution... | 03/20/2007 |
| 7192882 | Component for electromagnetic waves and a method for manufacturing the same The present invention relates to a method for fabricating a cavity in substrate for a component for electromagnetic waves, the method comprising providing said cavity by removal of material from said substrate by removal of material by immersing the substrate in a l... | 03/20/2007 |
| 6670257 | Method for forming horizontal buried channels or cavities in wafers of monocrystalline semiconductor material A method of forming buried cavities in a wafer of monocrystalline semiconductor material with at least one cavity formed in a substrate of monocrystalline semiconductor material by timed TMAH etching silicon; covering the cavity with a material inhibiting... | 12/30/2003 |
| 6642154 | Method and apparatus for fabricating structures using chemically selective endpoint detection One embodiment of the present invention provides a process for selective etching during semiconductor manufacturing. The process starts by receiving a silicon substrate with a first layer composed of a first material, which is covered by a second layer co... | 11/04/2003 |
| 6635500 | Treatment of substrates A process of reclaiming a semiconductor wafer 10 comprises the steps of a) removing films of foreign matter from the surface of the wafer 10 by etching, b) polishing opposite sides of the wafer 10 between contra-rotating polishing means 26, 28 to remove d... | 10/21/2003 |
| 6620331 | Method of etching an opening The invention relates to a method for etching an opening, and more precisely, to etching in a silicon plate for creating a nozzle opening. According to the invention, one side of the silicon plate (1) is protected by a protective layer (2), and a recess (... | 09/16/2003 |
| 6599840 | Material removal method for forming a structure Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the materi... | 07/29/2003 |
| 6596642 | Material removal method for forming a structure Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the materi... | 07/22/2003 |
| 6596648 | Material removal method for forming a structure Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the materi... | 07/22/2003 |
| 6545299 | Structures using chemo-mechanical polishing and chemically-selective endpoint detection One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids ... | 04/08/2003 |
| 6495411 | Technique to improve deep trench capacitance by increasing surface thereof A method for fabricating deep-submicron DRAMs containing a deep trench capacitor with enlarged sidewall surface for improved storage capacitance. It includes the main steps of: (a) forming a silicon substrate having a (110) crystalline plane and a (111) c... | 12/17/2002 |
| 6465357 | Fabricating structures using chemo-mechanical polishing and chemically-selective endpoint detection One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids ... | 10/15/2002 |
| 6461967 | Material removal method for forming a structure Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the materi... | 10/08/2002 |
| 6451218 | Method for the wet chemical pyramidal texture etching of silicon surfaces A new and improved etching solution and etching method provide wet chemical pyramidal texture etching of (100) silicon surfaces. A uniform and completely pyramidal texture etching of silicon surfaces is achieved with an etching solution including water, a... | 09/17/2002 |
| 6432837 | Semiconductor wafer processing method and semiconductor wafers produced by the same A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, pr... | 08/13/2002 |
| 6426254 | Method for expanding trenches by an anisotropic wet etch In accordance with the present invention, a method for expanding trenches includes the steps of forming a trench in a substrate, preparing surfaces withIn the trench by etching the surfaces with a wet etchant to provide a hydrogen terminated silicon surfa... | 07/30/2002 |
| 6417107 | Method for manufacturing a functional device by forming 45-degree-surface on (100) silicon Conventional methods of forming a (111)-plane into a 45-degree-surface have employed a silicon wafer which requires a high processing cost, and methods utilizing an inexpensive (100) silicon wafer have not been successful in forming a 45-degree-surface ha... | 07/09/2002 |
| 6395645 | Anisotropic wet etching A method for anisotropic wet etching is disclosed. In to this invention, a photo mask for the etching mask suited in the anisotropic wet etching is provided. In the photo mask, a pattern with a series of adjacent corners having a substantially rectangular... | 05/28/2002 |
| 6346485 | Semiconductor wafer processing method and semiconductor wafers produced by the same A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, pr... | 02/12/2002 |
| 6329296 | Metal catalyst technique for texturing silicon solar cells Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than ... | 12/11/2001 |
| 6309975 | Methods of making implanted structures Methods are disclosed for forming shaped structures of silicon-containing material with ion implantation and an etching process which is selective to silicon-containing material implanted to a certain concentration of ions or with an etching process which... | 10/30/2001 |
| 6261964 | Material removal method for forming a structure Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the materi... | 07/17/2001 |
| 6251542 | Semiconductor wafer etching method A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin o... | 06/26/2001 |
| 6239039 | Semiconductor wafers processing method and semiconductor wafers produced by the same A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, pr... | 05/29/2001 |
| 6199563 | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method An ultrasonic bath (30) is arranged below a wafer processing bath (10). Wafers (40) are processed while ultrasonic waves are transmitted from the ultrasonic bath (30) to the wafer processing bath (10). The wafers (40) are processed while being entirely di... | 03/13/2001 |
| 6197611 | Method for producing silicon solar cell The present invention provides a method for producing a solar cell comprising the step of immersing a silicon substrate in an etching solution which includes an aqueous sodium carbonate (Na2 CO3) solution, optionally an aqueous sodiu... | 03/06/2001 |
| 6078078 | V-gate transistor An integrated circuit and a method of making a transistor thereof are provided. The integrated circuit includes a substrate and a plurality of transistors positioned on a plurality of active areas. Each of the transistors has a gate dielectric layer with ... | 06/20/2000 |
| 6074948 | Method for manufacturing thin semiconductor device In a method for manufacturing a semiconductor device, a semiconductor wafer having a front surface with semiconductor elements and a back surface with no semiconductor elements is prepared, and the back surface of the semiconductor wafer is etched to form... | 06/13/2000 |
| 6066513 | Process for precise multichip integration and product thereof Process for making an integrated circuit module and product thereof including a carrier supporting a plurality of precisely aligned semiconductor circuit chips having uniform thicknesses.... | 05/23/2000 |
| 6060773 | Semiconductor chip and method of manufacturing the same A semiconductor chip has a nonvolatile memory formed on the upper surface side of a semiconductor substrate. The chip includes at least one recess portion formed in the lower surface of the semiconductor substrate. The recess portion is located in a regio... | 05/09/2000 |
| 6033489 | Semiconductor substrate and method of making same A semiconductor substrate is provided that exhibits very low substrate resistance while also providing structural integrity and robustness to resist breakage during manufacturing. The invention also provides methods of making these semiconductor substrate... | 03/07/2000 |
| 6015978 | Resonance tunnel device The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etch... | 01/18/2000 |
| 5980762 | Method of micromachining a semiconductor A method of micromachining a silicon wafer that simultaneously forms narrow gaps having a width of 10 μm or less and wider gap portions using an anistropic etching solution. The etching solution contains KOH in a concentration of 35% or less and the pene... | 11/09/1999 |
| 5913980 | Method for removing complex oxide film growth on silicon crystal A method for treating thin silicon web crystals used to produce solar cells in order to remove complex SiOx contaminants from the web after growth. A dendritic silicon web with {111} surface orientation is immersed in a caustic solution of KOH or NaOH at ... | 06/22/1999 |
| 5888845 | Method of making high sensitivity micro-machined pressure sensors and acoustic transducers A method of making a pressure sensor or acoustic transducer having high sensitivity and reduced size. A thin sensing diaphragm is produced by growing a single crystal, highly doped silicon layer on a substrate using a chemical vapor deposition process. Th... | 03/30/1999 |
| 5888852 | Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etch... | 03/30/1999 |
| 5880027 | Process for fabricating semiconductor wafer The present invention provides a process for fabricating a semiconductor wafer, including surface-grinding both sides of the sliced wafer, and cleaning the surface-ground wafer with an alkaline solution to remove the sharp protruded part. The frictional r... | 03/09/1999 |
