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| Number | Title | Issue Date |
| 7435681 | Methods of etching stacks having metal layers and hard mask layers Methods which comprise: providing a stack to be etched, the stack comprising a metal interconnect layer disposed above a substrate, a barrier layer disposed above the metal interconnect layer, a hard mask layer disposed on the barrier layer, and a patterning layer d... | 10/14/2008 |
| 7413995 | Etched interposer for integrated circuit devices In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer 106 incl... | 08/19/2008 |
| 7384869 | Protection of silicon from phosphoric acid using thick chemical oxide A method for protecting exposed silicon from attack by phosphoric acid during wet etching and stripping processes is provided. According to various embodiments of the method, a thick chemical oxide layer can be formed on the exposed silicon to protect the exposed po... | 06/10/2008 |
| 7368384 | Film formation apparatus and method of using the same A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containi... | 05/06/2008 |
| 7338887 | Plasma control method and plasma control apparatus A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the method serves to minimize variations in film thickness caused by the varia... | 03/04/2008 |
| 7312153 | Treatment of semiconductor wafers A method is described for treating a wafer having at least a surface layer of semiconductor material, with the surface of this surface layer having undergone a chemical-mechanical polishing step followed by an RCA cleaning step. After the polishing step and prior to... | 12/25/2007 |
| 7294566 | Method for forming wiring pattern, method for manufacturing device, device, electro-optic apparatus, and electronic equipment A method for forming a wiring pattern according to an aspect of the invention forms a wiring pattern in a certain area on a substrate by using a droplet discharge technique, and includes forming a bank surrounding the certain area on the substrate; discharging a fir... | 11/13/2007 |
| 7271022 | Process for forming microstructures The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a patter... | 09/18/2007 |
| 7192885 | Method for texturing surfaces of silicon wafers A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution. The etching solution... | 03/20/2007 |
| 7179753 | Process for planarizing substrates of semiconductor technology In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instea... | 02/20/2007 |
| 7129181 | Sub-resolution gaps generated by controlled over-etching Controlled overetching is utilized to produce metal patterns having gaps that are smaller than the resolution limits of the feature patterning (e.g., photolithography) process utilized to produce the metal patterns. A first metal layer is formed and masked, and expo... | 10/31/2006 |
| 7067435 | Method for etch-stop layer etching during damascene dielectric etching with low polymerization The present invention provides a method for etching a substrate 100. The method includes conducting a first etch through a dielectric layer 130 located over an etch-stop layer 140, the dielectric layer having a photoresist layer 170 locat... | 06/27/2006 |
| 6690027 | Method for making a device comprising layers of planes of quantum dots A method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe, or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate is described. Electrochemical treatment of the stack of layers to make the layers porous and f... | 02/10/2004 |
| 6683007 | Etching and cleaning methods and etching and cleaning apparatus used therefor An etching/cleaning method makes it possible to effectively remove unnecessary materials on a semiconductor wafer, having a surface peripheral area and a surface device area, without damaging the device area. The semiconductor is rotated in a horizontal p... | 01/27/2004 |
| 6677252 | Methods for planarization of non-planar surfaces in device fabrication A method of planarizing a surface of a wafer includes providing a planarization material on the wafer surface and bringing a substantially flat surface into contact with the planarization material on the wafer. The planarization material is exposed to rad... | 01/13/2004 |
| 6660180 | Compositions for etching silicon with high selectivity to oxides and methods of using same A silicon etching method includes providing a substrate assembly including an exposed silicon region and an exposed oxide region. An etch composition including an ammonium fluoride component, an inorganic acid component, and an oxidizing agent is also pro... | 12/09/2003 |
| 6649996 | In situ and ex situ hardmask process for STI with oxide collar application A method or process for etching a trench in an IC structure is disclosed. The IC structure might be comprised of a plurality of different component materials arranged proximate to one another, all of which need to be etched down to a target level. A first... | 11/18/2003 |
| 6641662 | Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO3 half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence throug... | 11/04/2003 |
| 6642154 | Method and apparatus for fabricating structures using chemically selective endpoint detection One embodiment of the present invention provides a process for selective etching during semiconductor manufacturing. The process starts by receiving a silicon substrate with a first layer composed of a first material, which is covered by a second layer co... | 11/04/2003 |
| 6635185 | Method of etching and cleaning using fluorinated carbonyl compounds A method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of F--C... | 10/21/2003 |
| 6630399 | Titanium disilicide resistance in pinched active regions of semiconductor devices A method of manufacturing a semiconductor device (2) on a substrate (1), the semiconductor device including an active area (5, 6, 16) in the substrate (1) demarcated by spacers (10-13,20-23) and arranged so as to contact an interconnect (29) including TiS... | 10/07/2003 |
| 6624067 | Process for removing a silicon-containing material through use of a byproduct generated during formation of a diffusion barrier layer A process for selectively removing a silicon-containing material through use of a byproduct of a chemical vapor deposition is disclosed. The process includes fabricating an insulating film upon a silicon base layer such that the insulating film includes a... | 09/23/2003 |
| 6610213 | Process for the wet chemical treatment of a semiconductor wafer A process for the wet chemical treatment of a semiconductor wafer in a vessel, in which the semiconductor wafer is brought into contact with a liquid in which very small gas bubbles are dispersed. Two circuits are set up for conveying the liquid, with a f... | 08/26/2003 |
| 6602433 | Gas delivery system A substrate is treated by supplying an etchant and/or deposition gas into a chamber in which the substrate is situated. In order to avoid the problems associated with transportation of toxic gases, the gases required for such processes are delivered direc... | 08/05/2003 |
| 6545299 | Structures using chemo-mechanical polishing and chemically-selective endpoint detection One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids ... | 04/08/2003 |
| 6540827 | Slicing of single-crystal films using ion implantation A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantati... | 04/01/2003 |
| 6538285 | Silicon wafer The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through... | 03/25/2003 |
| 6503321 | Slicing of single-crystal films using ion implantation A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantati... | 01/07/2003 |
| 6465357 | Fabricating structures using chemo-mechanical polishing and chemically-selective endpoint detection One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids ... | 10/15/2002 |
| 6444589 | Method and apparatus for etching silicon An etching method and an etching apparatus for applying an etchant containing nitric acid and hydrofluoric acid to silicon to etch the silicon. The etchant used in etching is recovered, and brought into contact with a gas inert to the etchant, whereby the... | 09/03/2002 |
| 6439989 | Polymeric polishing pad having continuously regenerated work surface An article or polishing pad for altering a surface of a workpiece includes a polymeric matrix having a work surface and a subsurface proximate to the work surface. When the article is in contact with a working environment, the work surface is made relativ... | 08/27/2002 |
| 6436229 | Gas phase silicon etching with bromine trifluoride An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3 can be applied in a pulse mode and in a continuous flow m... | 08/20/2002 |
| 6432837 | Semiconductor wafer processing method and semiconductor wafers produced by the same A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, pr... | 08/13/2002 |
| 6428620 | Substrate processing method and apparatus and SOI substrate An object of this invention is to provide a substrate processing method capable of satisfactorily performing in etching in the step of removing a porous silicon layer by etching. In order to achieve this object, a substrate processing method includes the ... | 08/06/2002 |
| 6413408 | Method for the production of a porous layer An interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide... | 07/02/2002 |
| 6413874 | Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same With a method according to the invention, a semiconductor article such as an SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is etched by heat treatment in a hydrogen-containing reducing atmosphere in order... | 07/02/2002 |
| 6406551 | Method for treating a substrate with heat sensitive agents The present invention provides a method for treating a substrate, or a plurality of substrates, so that the treatment thereof is enhanced. In particular, the method includes the steps of causing a heated liquid to contact the substrate(s) and causing a pr... | 06/18/2002 |
| 6383936 | Method for removing black silicon in semiconductor fabrication A method for removing black silicon in semiconductor fabrication is disclosed. First, a trench is formed in a semiconductor substrate having a pad dielectric layer and a hard mask layer. Then, the hard mask layer is removed. A photoresist layer covers the... | 05/07/2002 |
| 6383403 | Dry etching method A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 1010 /cm3 is generated. As the perfluorocycloolefin, those having... | 05/07/2002 |
| 6380099 | Porous region removing method and semiconductor substrate manufacturing method A given planarity of the underlying layer is ensured after removal of a porous layer. In the first step, a porous layer is filled with a preprocess solution (e.g., water). In the second step, the preprocess solution filling the porous layer is replaced wi... | 04/30/2002 |
