Did You Know...
...that the Eveready Battery began as an invention called the "electric flowerpot," which was a tube with a battery and light bulb inside? The idea was to fasten this gizmo to the side of a flowerpot so it would illuminate the flowers from the bottom. The idea died on the vine and the businessman who licensed the flower pot, Conrad Huber, was left with a pile of useless tubes -- until he found a way to market them as batteries to light the world!
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| Number | Title | Issue Date |
| 7435628 | Method of forming a vertical MOS transistor A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. Th... | 10/14/2008 |
| 7416961 | Method for structuring a flat substrate consisting of a glass-type material Disclosed is a method for structuring a flat substrate consisting of a glass-type material. The invented method is distinguished by a combination of the following steps: providing a semiconductor flat substrate consisting of a semiconductor material, structur... | 08/26/2008 |
| 7371664 | Process for wafer thinning The present invention relates to a process for thinning a semiconductor wafer. Two surfaces of the wafer separately form a surface-bond glue (layer) and a surface protective glue (layer). The thinning process is applied to the wafer before forming the surface protec... | 05/13/2008 |
| 7344997 | Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device A semiconductor substrate comprising a semiconductor base, a dielectric layer formed in at least a part of an area on the semiconductor base, and a single crystal semiconductor layers having mutually different film thicknesses, disposed on the dielectric layer and f... | 03/18/2008 |
| 7323699 | Apparatus and method for modifying an object A method and apparatus includes positioning a reactant on a surface in specific location and then directing an energy source from a device at the reactant such that it modifies the surface to either remove material or add material. ... | 01/29/2008 |
| 7303962 | Fabricating method of CMOS and MOS device A complementary metal-oxide-semiconductor (CMOS) device comprising a substrate, a first type of metal-oxide-semiconductor (MOS) transistor, a second type of MOS transistor, an etching stop layer, a first stress layer and a second stress layer is provided. The substr... | 12/04/2007 |
| 7288418 | Process for treating substrates for the microelectronics industry, and substrates obtained by this process A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a redu... | 10/30/2007 |
| 7273824 | Semiconductor structure and fabrication therefor A semiconductor structure and a method of fabrication there-for are provided. The semiconductor structure comprises a substrate, a dielectric layer disposed over the substrate, a hydrophilic material layer disposed over the dielectric layer, and a hardmask layer dis... | 09/25/2007 |
| 7256148 | Method for treating a wafer edge A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the wafer surface only on the edge portion that is being treated. Alternat... | 08/14/2007 |
| 7253119 | Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles A plurality of semiconductor nanoparticles having an elementally passivated surface are provided. These nanoparticles are capable of being suspended in water without substantial agglomeration and substantial precipitation on container surfaces for at least 30 days. ... | 08/07/2007 |
| 7247572 | Method for fabricating a capacitor using a metal insulator metal structure A method for fabricating a capacitor using a metal/insulator/metal (MIM) structure is disclosed. An example method for fabricating a capacitor using an MIM structure including a first metal layer, a dielectric layer, and a second metal layer etches the second metal ... | 07/24/2007 |
| 7226870 | Forming of oblique trenches A method for forming an oblique recess of minimum dimension smaller than 10 μm in a wafer arranged in a plasma etch reactor in which the plasma extends along the wafer surface, including forming discontinuities in the contour of the plasma and of its sheath in the ... | 06/05/2007 |
| 7211517 | Semiconductor device and method that includes reverse tapering multiple layers A method of manufacturing a semiconductor device of the present invention includes (a) sequentially forming a gate insulating film 14, a first conductive layer 15 and a first insulating film 16 on a semiconductor layer 13 provided on an i... | 05/01/2007 |
| 7202177 | Nitrous oxide stripping process for organosilicate glass A method of stripping an integrated circuit (IC) structure having a photoresist material and an organosilicate glass (OSG) material is described. The method comprises feeding a nitrous oxide (N2O) gas into a reactor, generating a plasma in the reactor and... | 04/10/2007 |
| 7115515 | Methods for forming capacitor structures The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to ... | 10/03/2006 |
| 7098143 | Etching method using an at least semi-solid media An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove meta... | 08/29/2006 |
| 7074679 | Methods of fabricating self-aligned source of flash memory device Example methods of fabricating semiconductor devices are disclosed. One example method may include depositing an oxide layer, a first conducting layer for a floating gate, a dielectric layer, and a second conducting layer for a control gate in sequence on a semicond... | 07/11/2006 |
| 6693047 | Method for recycling semiconductor wafers having carbon doped low-k dielectric layers A method for removing at least one carbon doped oxide layer over a surface to recycle the semiconductor process wafer including providing a semiconductor wafer including a process surface including at least one carbon doped silicon oxide layer; oxidizing ... | 02/17/2004 |
| 6656818 | Manufacturing process for semiconductor wafer comprising surface grinding and planarization or polishing Provided is a manufacturing process for a semiconductor wafer according to which semiconductor wafers each with higher flatness can be manufactured with good efficiency from a wafer work having passed through a surface grinding step by enabling restrictio... | 12/02/2003 |
| 6635500 | Treatment of substrates A process of reclaiming a semiconductor wafer 10 comprises the steps of a) removing films of foreign matter from the surface of the wafer 10 by etching, b) polishing opposite sides of the wafer 10 between contra-rotating polishing means 26, 28 to remove d... | 10/21/2003 |
| 6585567 | Short CMP polish method A short CMP polish process is provided which removes minimal amounts of oxide and reduces defectivity at the surface of the wafer during short periods of rework by maintaining a high pH at the wafer surface in the presence of a high pH slurry. In one embo... | 07/01/2003 |
| 6576501 | Double side polished wafers having external gettering sites, and method of producing same A semiconductor wafer manufacturing process is disclosed wherein a double side polished wafer having oxygen induced stacking faults to provide extrinsic gettering on the back surface of the wafer. The process includes polishing the back surface of the waf... | 06/10/2003 |
| 6566267 | Inexpensive process for producing a multiplicity of semiconductor wafers A process for producing a multiplicity of semiconductor wafers, which includes the following individual steps: (a) simultaneous polishing a front side and a back side of each semiconductor wafer between rotating polishing plates with a polishing fluid bei... | 05/20/2003 |
| 6547647 | Method of wafer reclaim A method of wafer reclaim, at least includes: provide a wafer; perform a first semiconductor process to let both film layer and numerous particles are formed on the wafer; perform chemical mechanical polishing process to let part of film layer is removed ... | 04/15/2003 |
| 6538285 | Silicon wafer The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through... | 03/25/2003 |
| 6514835 | Stress control of thin films by mechanical deformation of wafer substrate A method of improving the physical and/or electrical and/or magnetic properties of a thin film material formed on a substrate, wherein the properties of the thin film material are stress-dependent, by selectively applying force to the substrate during the... | 02/04/2003 |
| 6514423 | Method for wafer processing A method for processing a semiconductor wafer to reduce surface roughness. The wafer has two flat, opposite faces with a peripheral edge extending around a circumference of the wafer between the faces. The method includes, in the following order, the step... | 02/04/2003 |
| 6511895 | Semiconductor wafer turning process A semiconductor wafer processing apparatus grinds a surface of a semiconductor wafer by mechanical grinding, and then removes a damaged layer in the ground surface. In the processing apparatus, a grinding portion, a precenter portion, a wafer cleaning por... | 01/28/2003 |
| 6465328 | Semiconductor wafer manufacturing method An edge-rounded portion mirror finishing process, which results in low deformation on a wafer, which has undergone a slicing process including a grinding process in which double-sided grinding is performed on the. sliced wafer; a finishing grinding proces... | 10/15/2002 |
| 6455399 | Smoothing method for cleaved films made using thermal treatment In a specific embodiment, the present invention provides a novel process for smoothing a surface of a separated film. The present process is for the preparation of thin semiconductor material films. The process includes a step of implanting by ion bombard... | 09/24/2002 |
| 6432824 | Method for manufacturing a semiconductor wafer In the semiconductor wafer manufacturing method of the present invention, a deteriorated layer on the surface of a semiconductor wafer which has been made flat by lapping or polishing is removed by the following dry etching. Plasma which contains a neutra... | 08/13/2002 |
| 6417147 | Cleaning agent composition, method for cleaning and use thereof An object of the present invention is to provide a new cleaning agent composition having excellent cleaning power for the surface contamination of a semiconductor wafer or various precisely worked instruments made of glass or ceramic, which is used in the... | 07/09/2002 |
| 6376335 | Semiconductor wafer manufacturing process A semiconductor wafer manufacturing process is disclosed wherein extremely flat, double side polished semiconductor wafers having enhanced gettering characteristics on the back surface are produced. The process includes creating an enhanced gettering laye... | 04/23/2002 |
| 6376395 | Semiconductor wafer manufacturing process A process for manufacturing polished-like first-grade semiconductor wafers is disclosed. The process greatly simplifies the amount of polishing required while producing high quality semiconductor wafers. After a semiconductor wafer is sliced from a single... | 04/23/2002 |
| 6333279 | Method for producing silicon wafer and silicon wafer The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through... | 12/25/2001 |
| 6315826 | Semiconductor substrate and method of manufacturing the same Disclosed are a structure of a semiconductor substrate and a method of manufacturing the semiconductor substrate preventing a reduction of gettering capability due to a high-temperature heat treatment. In a semiconductor substrate containing a highly conc... | 11/13/2001 |
| 6284658 | Manufacturing process for semiconductor wafer The present invention has an object to provide a manufacturing process of a semiconductor wafer in which improvement on accuracy in a chamfering portion is realized. The manufacturing process of a semiconductor wafer comprises: a slicing step of obtaining... | 09/04/2001 |
| 6244945 | Polishing system including a hydrostatic fluid bearing support A polishing system such as a chemical mechanical belt polisher includes a hydrostatic fluid bearing that supports polishing pads and incorporates one or more of the following novel aspects. One aspect uses compliant surfaces surrounding fluid inlets in an... | 06/12/2001 |
| 6204151 | Smoothing method for cleaved films made using thermal treatment In a specific embodiment, the present invention provides a novel process for smoothing a surface of a separated film. The present process is for the preparation of thin semiconductor material films. The process includes a step of implanting by ion bombard... | 03/20/2001 |
| 6180742 | Pressure sensitive adhesive composition and use thereof A pressure sensitive adhesive composition comprising: (A) a carboxyl group containing copolymer obtained by solution polymerization of (a) a carboxyl group containing polymerizable monomer and (b) another monomer copolymerizable with the monomer (a); (B) a neu... | 01/30/2001 |
