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"I watched his countenance closely, to see if he was not deranged ... and I was assured by other senators after he left the room that they had no confidence in it."
U.S. Senator Smith of Indiana ; After seeing Samuel Morse demonstrate the telegraph.
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| Number | Title | Issue Date |
| 7442631 | Doping method and method of manufacturing field effect transistor A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a first concentration; analyzing a peak concentration Y of the compound ... | 10/28/2008 |
| 7442623 | Method for manufacturing bonded substrate and bonded substrate manufactured by the method A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlappi... | 10/28/2008 |
| 7416924 | Organic light emitting display with single crystalline silicon TFT and method of fabricating the same Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the singl... | 08/26/2008 |
| 7410839 | Thin film transistor and manufacturing method thereof The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes ... | 08/12/2008 |
| 7384812 | Method of manufacturing a semiconductor device with light shading means The semiconductor device according to this invention is characterized by a package structure of a semiconductor substrate 100 equipped with a photoelectric converting portion, wherein a light-shading means 104 is arranged in an area corresponding to at... | 06/10/2008 |
| 7372113 | Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the ga... | 05/13/2008 |
| 7368369 | Method for activating P-type semiconductor layer A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprise... | 05/06/2008 |
| 7189662 | Methods of forming semiconductor constructions The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive material of the substrate to deuterium-enriched steam. In other aspe... | 03/13/2007 |
| 7189639 | Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a proces... | 03/13/2007 |
| 7144783 | Reducing gate dielectric material to form a metal gate electrode extension In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have vertical portions that may be exposed to a reduction reaction. As a result of the reduction reaction, the vertical portions may be converted to metal, which adds to the existing g... | 12/05/2006 |
| 7109103 | Semiconductor device and method of manufacturing the same A semiconductor device including a silicon substrate, a gate insulator film formed on the silicon substrate and including silicon, deuterium, and at least one of oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein a deuterium concentr... | 09/19/2006 |
| 6677213 | SONOS structure including a deuterated oxide-silicon interface and method for making the same A method for processing a semiconductor topography is provided, which includes diffusing deuterium across one or more interfaces of a silicon-oxide-nitride-oxide-silicon (SONOS) structure. In particular, the method may include diffusing deuterium across o... | 01/13/2004 |
| 6674151 | Deuterium passivated semiconductor device having enhanced immunity to hot carrier effects A semiconductor device having trap sites passivated with deuterium has enhanced immunity to hot carrier effects. The trap sites which are passivated with deuterium are encapsulated beneath a barrier film and are therefore resistant to having the deuterium... | 01/06/2004 |
| 6661065 | Semiconductor device and SOI substrate A systematized semiconductor device having a gate insulating film which can be formed thinner than a silicon oxide film and which is less susceptible to deterioration. Further, a semiconductor device having improved reliability in which an insulating film... | 12/09/2003 |
| 6624052 | Process for annealing semiconductors and/or integrated circuits A method of making a semiconductor structure, includes annealing a structure in a deuterium-containing atmosphere. The structure includes (i) a substrate, (ii) a gate dielectric on the substrate, (iii) a gate on the gate dielectric, (iv) an etch-stop laye... | 09/23/2003 |
| 6603181 | MOS device having a passivated semiconductor-dielectric interface A MOS structure processed to have a semiconductor-dielectric interface that is passivated to reduce the interface state density. An example is a MOSFET having a gate dielectric on which an electrode is present that is substantially impervious to molecular... | 08/05/2003 |
| 6586809 | Semiconductor device and method for fabricating the same A gate insulating film, a gate electrode, a gate-top protection film, LDD layers and nitride film sidewalls are formed on a semiconductor substrate. Source/drain regions are formed in the semiconductor substrate. After deposition of an interlayer insulati... | 07/01/2003 |
| 6576522 | Methods for deuterium sintering A method for deuterium sintering to improve the hot carrier aging of an integrated circuit includes (a) providing a partially fabricated integrated circuit structure comprising a semiconductor substrate and a dielectric layer formed on at least a portion ... | 06/10/2003 |
| 6544908 | Ammonia gas passivation on nitride encapsulated devices A method for passivating at least interfaces between structures formed from a material including silicon and adjacent dielectric structures so as to reduce a concentration of dangling silicon bonds at these interfaces and to reduce or eliminate the occurr... | 04/08/2003 |
| 6541373 | Manufacture method for semiconductor with small variation in MOS threshold voltage After a MOS type transistor is formed on the surface of a semiconductor substrate, an interlayer insulating film covering the transistor is formed. The insulating film includes a silicon oxide film made of hydrogen silsesquioxane resin in a ceramic state.... | 04/01/2003 |
| 6521977 | Deuterium reservoirs and ingress paths Semiconductor structures are provided with on-board deuterium reservoirs or with deuterium ingress paths which allow for diffusion of deuterium to semiconductor device regions for passivation purposes. The on-board deuterium reservoirs are in the form of ... | 02/18/2003 |
| 6483172 | Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface states A process for fabricating a device including the step of forming a structure for facilitating the passivation of surface states is disclosed. The structure comprises an oxynitride layer formed as part of the device structure. The oxynitride facilitates th... | 11/19/2002 |
| 6465370 | Low leakage, low capacitance isolation material A method for reducing a capacitance formed on a silicon substrate includes the step of introducing hydrogen atoms into a portion of said surface to increase the dielectric constant of such portion of the surface increasing the effective thickness of the d... | 10/15/2002 |
| 6458714 | Method of selective oxidation in semiconductor manufacture Disclosed is a method of selective oxidation of components of a semiconductor transistor containing silicon in the presence of high conductivity metal or metal alloys. A high temperature annealing step allows hydrogen gas to permeate the surface of a meta... | 10/01/2002 |
| 6444533 | Semiconductor devices and methods for same Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can ... | 09/03/2002 |
| 6436799 | Process for annealing semiconductors and/or integrated circuits A method of making a semiconductor structure, includes annealing a structure in a deuterium-containing atmosphere. The structure includes (i) a substrate, (ii) a gate dielectric on the substrate, (iii) a gate on the gate dielectric, (iv) an etch-stop laye... | 08/20/2002 |
| 6436195 | Method of fabricating a MOS device Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free rad... | 08/20/2002 |
| 6365935 | TFT having hydrogen containing buffer and substrate regions There is disclosed a method of fabricating a semiconductor device having excellent characteristics. The device comprises a substrate having an insulating surface. A hydrogen-rich region is formed inside the substrate by ion doping. Thermal processing is p... | 04/02/2002 |
| 6352909 | Process for lift-off of a layer from a substrate Process for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separative interlayer comprises a thin quasi-continuous gaseous layer a... | 03/05/2002 |
| 6350673 | Method for decreasing CHC degradation A method for decreasing CHC degradation is provided. The method includes providing a semiconductor device (10) having at least one metal layer (28) completed. Then, a planarizing dielectric layer (30) is added to the semiconductor device (10). The semicon... | 02/26/2002 |
| 6326274 | Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface... | 12/04/2001 |
| 6309938 | Deuterated bipolar transistor and method of manufacture thereof A bipolar transistor and a method of manufacturing the transistor. The transistor includes: (1) a substrate having a base region, an emitter region and a base-emitter junction between said base and emitter regions and (2) a substantial concentration of an... | 10/30/2001 |
| 6309968 | Method to improve intrinsic refresh time and dichlorosilane formed gate oxide reliability The intrinsic refresh time of a DRAM and the reliability of the gate oxide of the pass transistor of the memory cell of the DRAM is improved by a method to form electronic components of an integrated circuit on a semiconductor substrate that will eliminat... | 10/30/2001 |
| 6281053 | Thin film transistor with reduced hydrogen passivation process time A thin film field effect transistor includes source and drain regions, an active region sandwiched by the source and drain semiconductor regions. A gate insulating film is provided to cover the source and drain regions and the active region, and a semicon... | 08/28/2001 |
| 6258640 | Semiconductor device manufacturing method A well region is formed in a semiconductor substrate, the surface of the semiconductor substrate is thermally oxidized to thereby form a device isolation insulating film, impurities are injected into the semiconductor substrate to form a guard ring immedi... | 07/10/2001 |
| 6255197 | Hydrogen annealing method and apparatus A processing method includes providing a first gas including a hydrogen atom into a first chamber, igniting a plasma within the first chamber to provide a source of hydrogen atoms, passing the plasma downstream through a cavity to a second chamber dispose... | 07/03/2001 |
| 6221705 | Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface... | 04/24/2001 |
| 6194311 | Method for manufacturing semiconductor device capable of effectively carrying out hydrogen passivation In a method for manufacturing a semiconductor device, a first insulating layer is formed on a semiconductor substrate, and a gate electrode is formed on the first insulating layer. Then, a second insulating layer is formed over the gate electrode. The sec... | 02/27/2001 |
| 6187665 | Process for deuterium passivation and hot carrier immunity A process sequence for forming a semiconductor device utilizes a passivation annealing process using deuterium which enhances immunity to hot carrier effects and extends device lifetime. The process sequence is carried out prior to the introduction of met... | 02/13/2001 |
| 6156653 | Method of fabricating a MOS device Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free rad... | 12/05/2000 |
