Class 257/E21.204 - Conductor layer next to insulator is non-MeSi composite or compound, e.g., TiN (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.195. This subclass
No. of patents: 77
Last issue date: 09/30/2008

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Number	Title	Issue Date
7429777	Semiconductor device with a gate electrode having a laminate structure A semiconductor device includes a semiconductor substrate having a semiconductor layer, a gate electrode, a source region, a drain region, an element separation insulating film layer and a wiring. The gate electrode include a laminated structure having a gate insula...	09/30/2008
7300603	Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers An aqueous chemical mechanical planarizing composition includes an oxidizer for promoting barrier removal and an abrasive. Inhibitor decreases removals of a metal interconnect. The composition has a carboxylic acid polymer having at least one repeat unit of the poly...	11/27/2007
7282403	Temperature stable metal nitride gate electrode An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is charact...	10/16/2007
7256125	Method of manufacturing a semiconductor device For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film s...	08/14/2007
7208409	Integrated circuit metal silicide method Fluorine containing regions (70) are formed in the source and drain regions (60) of the MOS transistor. A metal layer (90) is formed over the fluorine containing regions (70) and the source and drain regions (60). The metal layer i...	04/24/2007
7186632	Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon In a method for manufacturing a semiconductor device having a laminated gate electrode, a phosphorus-doped polysilicon is formed on a gate oxide film. A high-melting metal or a compound of a high-melting metal and silicon is formed on the polysilicon. Phosphorus is ...	03/06/2007
7179743	Titanium underlayer for lines in semiconductor devices A thin Titanium underlayer 22 is included beneath a Titanium rich Titanium Nitride layer 28 in a metal line 20 on a silicon substrate to reduce stress voiding. ...	02/20/2007
7115524	Methods of processing a semiconductor substrate The invention includes methods of processing semiconductor substrates. In one implementation, a semiconductor substrate is provided which has an outer surface. Such surface has a peripheral region received about a peripheral edge of the semiconductor substrate. A la...	10/03/2006
6696345	Metal-gate electrode for CMOS transistor applications Described is a CMOS transistor structure with a multi-layered gate electrode structure and a method of fabrication. The gate electrode structure has a three-layered metallic gate electrode and a polysilicon layer. The first metallic layer acts as a barrie...	02/24/2004
6693313	Field effect transistors, field effect transistor assemblies, and integrated circuitry The invention encompasses integrated circuitry which includes a semiconductive material substrate and a first field effect transistor supported by the substrate. The first field effect transistor comprises a first transistor gate assembly which includes a...	02/17/2004
6664195	Method for forming damascene metal gate The present invention relates to a method of forming a damascene gate electrode of highly integrated MOS transistor capable of easily removing a dummy polysilicon layer. The disclosed comprises the steps of forming a dummy gate insulating layer and a poly...	12/16/2003
6664604	Metal gate stack with etch stop layer A metal gate structure and method of forming the same employs an etch stop layer between a first metal layer, made of TiN, for example, and the metal gate formed of tungsten. The etch stop layer prevents overetching of the TiN during the etching of the tu...	12/16/2003
6660577	Method for fabricating metal gates in deep sub-micron devices A method for fabricating metal gates in deep sub-micron CMOS devices. The method blanket deposits a transition metal nitride layer on top of a gate dielectric layer for forming gate electrodes for both a PMOS and an NMOS device. After a cap layer is depos...	12/09/2003
6657268	Metal gate stack with etch stop layer having implanted metal species A metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN during the etchin...	12/02/2003
6645798	Metal gate engineering for surface p-channel devices A semiconductor device, such as a CMOS device, having gates with a high work function in PMOS regions and low work functions in NMOS regions and a method of producing the same. Using nitrogen implantation or plasma annealing, a low work function W (or CoS...	11/11/2003
6642591	Field-effect transistor A field-effect transistor includes a silicon substrate on which is formed a channel region, a source region and a drain region. A gate insulation layer of a transition metal oxide having a perovskite structure is formed over at least the channel region, a...	11/04/2003
6638874	Methods used in fabricating gates in integrated circuit device structures One embodiment of the present invention is a method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory me...	10/28/2003
6635570	PECVD and CVD processes for WNx deposition Improvements to chemical vapor deposition processes are taught for depositing tungsten nitride in semiconductor manufacturing processes. In one irmproved process NF3 is used as a source of nitrogen, and a plasma is introduced under controlled c...	10/21/2003
6632731	Structure and method of making a sub-micron MOS transistor A method of fabricating a sub-micron MOS transistor includes preparing a substrate, including isolating an active region therein; depositing a gate oxide layer; depositing a first selective etchable layer over the gate oxide layer; depositing a second sel...	10/14/2003
6630710	Elevated channel MOSFET The present invention provides a semiconductor device (e.g., MOSFET) having a channel above the surface of the wafer containing a well and a junction. The elevated channel may be selectively epitaxially grown and enables higher mobility, thereby enabling ...	10/07/2003
6617226	Semiconductor device and method for manufacturing the same In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating ...	09/09/2003
6614082	Fabrication of semiconductor devices with transition metal boride films as diffusion barriers An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming t...	09/02/2003
6613654	Fabrication of semiconductor devices with transition metal boride films as diffusion barriers An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming t...	09/02/2003
6607958	Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating film and a gate electrode formed on the semiconductor substrate, source-drain regions formed in the semiconductor substrate, and a metal oxide layer formed selectivel...	08/19/2003
6562687	MIS transistor and method for making same on a semiconductor substrate The invention relates to an MIS transistor comprising a channel region (118), source (114) and drain (116) regions arranged on either side of the channel, and a gate (150) set closely above the channel region. According to the invention, the channel has a...	05/13/2003
6548389	Semiconductor device and method for fabricating the same After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium n...	04/15/2003
6545356	Graded layer for use in semiconductor circuits and method for making same Methods of forming a graded layer is disclosed. The graded layer transitions from one material to another material. The properties of these materials are chosen to optimize the interfaces on each side of the graded layer. Specifically, an improved transis...	04/08/2003
6537901	Method of manufacturing a transistor in a semiconductor device There is disclosed a method of manufacturing a transistor in a semiconductor device. The present invention forms a Ta film or a TaNx film at a low temperature or forms a first TaNx film in which the composition(x) of nitrogen is 0.45~0.55, on a gate insul...	03/25/2003
6498378	Methods of forming field effect transistors and integrated circuitry The invention encompasses integrated circuitry which includes a semiconductive material substrate and a first field effect transistor supported by the substrate. The first field effect transistor comprises a first transistor gate assembly which includes a...	12/24/2002
6492217	Complementary metal gates and a process for implementation A transistor device includes a gate dielectric overlying a substrate, a barrier layer overlying the gate dielectric, and a gate electrode overlying the barrier layer. The barrier layer of the device has a physical property that inhibits interaction betwee...	12/10/2002
6486030	Methods of forming field effect transistors and integrated circuitry including TiN gate element The invention encompasses integrated circuitry which includes a semiconductive material substrate and a first field effect transistor supported by the substrate. The first field effect transistor comprises a first transistor gate assembly which includes a...	11/26/2002
6476454	Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating film and a gate electrode formed on the semiconductor substrate, source-drain regions formed in the semiconductor substrate, and a metal oxide layer formed selectivel...	11/05/2002
6462403	Semiconductor device comprising thin film transistors having a passivation film formed thereon A semiconductor device comprising a thin film transistor, and a process for fabricating the same, the process comprising: a first step of forming an island-like semiconductor layer, a gate insulating film covering the semiconductor layer, and a gate elect...	10/08/2002
6451658	Graded layer for use in semiconductor circuits and method for making same Methods of forming a graded layer is disclosed. The graded layer transitions from one material to another material. The properties of these materials are chosen to optimize the interfaces on each side of the graded layer. Specifically, an improved transis...	09/17/2002
6444513	Metal gate stack with etch stop layer having implanted metal species A metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN during the etchin...	09/03/2002
6432779	Selective removal of a metal oxide dielectric A method for forming a semiconductor device is disclosed in which a metal oxide gate dielectric layer is formed over a substrate. A gate electrode is then formed over the metal oxide layer thereby exposing a portion of the metal oxide layer. The exposed p...	08/13/2002
6423619	Transistor metal gate structure that minimizes non-planarity effects and method of formation A metal gate structure is formed by depositing a gate dielectric, a gate electrode, a stop layer, and a metal layer within a gate trench and removing the portions of the layers that lie outside the gate trench. A first polish or etch process is used to re...	07/23/2002
6417551	Semiconductor device and method of manufacturing the same The present invention provides a method of manufacturing a semiconductor device, comprising the steps of forming a gate insulating film, on a semiconductor substrate, forming a gate electrode containing a refractory metal layer on the gate insulation film...	07/09/2002
6417085	Methods of forming a field effect transistor gate construction The invention includes field effect transistors and methods of forming field effect transistors. In one implementation, a field effect transistor includes a semiconductive channel region and a gate construction operatively proximate the channel region. Th...	07/09/2002
6376888	Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device having an N-type MIS transistor formed in a first region and a P-type MIS transistor formed in a second region, wherein, the N-type MIS transistor includes a first gate insulating film formed on at least the bottom of a...	04/23/2002

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Class 257/E21.204 - Conductor layer next to insulator is non-MeSi composite or compound, e.g., TiN (EPO)