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| Number | Title | Issue Date |
| 7384800 | Method of fabricating metal-insulator-metal (MIM) device with stable data retention In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of α-Ta is provided. The Ta of the first electrode is oxidized to form a Ta2O5 layer on the first electrode. A second electrode of β-Ta is provided on the Ta... | 06/10/2008 |
| 7381608 | Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode A method for making a semiconductor device is described. That method comprises adding nitrogen to a silicon dioxide layer to form a nitrided silicon dioxide layer on a substrate. After forming a sacrificial layer on the nitrided silicon dioxide layer, the sacrificia... | 06/03/2008 |
| 7374998 | Selective incorporation of charge for transistor channels A device and method for selective placement of charge into a gate stack includes forming gate stacks including a gate dielectric adjacent to a transistor channel and a gate conductor and forming doped regions for transistor operation. A layer rich in a passivating e... | 05/20/2008 |
| 7241677 | Process for producing integrated circuits including reduction using gaseous organic compounds This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing ce... | 07/10/2007 |
| 6664154 | Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes An exemplary embodiment relates to a method of using amorphous carbon in replacement gate integration processes. The method can include depositing an amorphous carbon layer above a substrate, patterning the amorphous carbon layer, depositing a dielectric ... | 12/16/2003 |
| 6664195 | Method for forming damascene metal gate The present invention relates to a method of forming a damascene gate electrode of highly integrated MOS transistor capable of easily removing a dummy polysilicon layer. The disclosed comprises the steps of forming a dummy gate insulating layer and a poly... | 12/16/2003 |
| 6664186 | Method of film deposition, and fabrication of structures A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vap... | 12/16/2003 |
| 6649462 | Semiconductor device and method of manufacturing the same including T-shaped gate A gate insulating film is provided on a channel region. A gate electrode includes a lower part and an upper part. The lower part has a lower surface and sides, and the upper part has a lower surface. The lower surface of the lower part contacts the gate i... | 11/18/2003 |
| 6638829 | Semiconductor structure having a metal gate electrode and elevated salicided source/drain regions and a method for manufacture A semiconductor structure and a process for its manufacture. A metal gate electrode is formed on a semiconductor substrate, the gate electrode being between nitride spacers. Lightly-doped drain regions and source/drain regions are disposed in the substrat... | 10/28/2003 |
| 6614082 | Fabrication of semiconductor devices with transition metal boride films as diffusion barriers An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming t... | 09/02/2003 |
| 6613654 | Fabrication of semiconductor devices with transition metal boride films as diffusion barriers An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming t... | 09/02/2003 |
| 6603181 | MOS device having a passivated semiconductor-dielectric interface A MOS structure processed to have a semiconductor-dielectric interface that is passivated to reduce the interface state density. An example is a MOSFET having a gate dielectric on which an electrode is present that is substantially impervious to molecular... | 08/05/2003 |
| 6579775 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electro... | 06/17/2003 |
| 6573149 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electro... | 06/03/2003 |
| 6562687 | MIS transistor and method for making same on a semiconductor substrate The invention relates to an MIS transistor comprising a channel region (118), source (114) and drain (116) regions arranged on either side of the channel, and a gate (150) set closely above the channel region. According to the invention, the channel has a... | 05/13/2003 |
| 6537901 | Method of manufacturing a transistor in a semiconductor device There is disclosed a method of manufacturing a transistor in a semiconductor device. The present invention forms a Ta film or a TaNx film at a low temperature or forms a first TaNx film in which the composition(x) of nitrogen is 0.45~0.55, on a gate insul... | 03/25/2003 |
| 6518154 | Method of forming semiconductor devices with differently composed metal-based gate electrodes MOS transistors and CMOS devices comprising a plurality of transistors including metal-based gate electrodes of different composition are formed by a process comprising: depositing a first blanket layer of a first metal on a thin gate insulator layer exte... | 02/11/2003 |
| 6515320 | Semiconductor device and method of manufacturing the same including thicker insulating layer on lower part of electrode A gate insulating film is provided on a channel region. A gate electrode includes a lower part and an upper part. The lower part has a lower surface and sides, and the upper part has a lower surface. The lower surface of the lower part contacts the gate i... | 02/04/2003 |
| 6482714 | Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device comprising a transistor structure including an epitaxial silicon layer formed on a main surface of an n-type semiconductor substrate, source-drain diffusion layers formed on at least the epitaxial silicon layer, a chann... | 11/19/2002 |
| 6479336 | Method for fabricating semiconductor device In the method of fabrication a structure is formed on a semiconductor substrate. The structure includes a tungsten suicide film. A contact hole is formed in the structure, and an oxidation process is conducted such that if a portion of the tungsten silici... | 11/12/2002 |
| 6383879 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electro... | 05/07/2002 |
| 6376349 | Process for forming a semiconductor device and a conductive structure Semiconductor devices and conductive structures can be formed having a metallic layer. In one embodiment, a semiconductor device includes an amorphous metallic layer (22) and a crystalline metallic layer (42). The amorphous metallic layer (22) helps to re... | 04/23/2002 |
| 6335542 | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than ... | 01/01/2002 |
| 6326219 | Methods for determining wavelength and pulse length of radiant energy used for annealing The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped thro... | 12/04/2001 |
| 6326251 | Method of making salicidation of source and drain regions with metal gate MOSFET A method of forming a transistor includes forming a source/drain implant in the initial processing stages just after the formation of the isolation and active regions on the substrate. A uniform nitride layer is formed over the surface of the substrate on... | 12/04/2001 |
| 6300201 | Method to form a high K dielectric gate insulator layer, a metal gate structure, and self-aligned channel regions, post source/drain formation A process of fabricating a sub-micron MOSFET device, featuring a high dielectric constant gate insulator layer, and a metal gate structure, has been developed. Processes performed at temperatures detrimental to the high dielectric, gate insulator layer, s... | 10/09/2001 |
| 6294820 | Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer A method for forming a tantalum-based anti-reflective coating (ARC) layer begins by forming an MOS metallic gate electrode layer (20) over a substrate (20). The MOS metallic gate electrode layer (20) is covered with an ARC layer (22). The ARC layer is pre... | 09/25/2001 |
| 6291282 | Method of forming dual metal gate structures or CMOS devices An embodiment of the instant invention is a method of forming a first transistor having a first gate electrode and a second transistor having a second gate electrode on a semiconductor substrate, the method comprising the steps of: forming a conductive ma... | 09/18/2001 |
| 6287918 | Process for fabricating a metal semiconductor device component by lateral oxidization A process for fabricating a semiconductor device includes the formation of a metal device feature layer using lithographic techniques, followed by an oxidation process to reduce the lateral dimension of the metal device feature. The oxidation process is c... | 09/11/2001 |
| 6271573 | Semiconductor device with gate structure and method of manufacturing the same Variations in threshold voltage among MOS devices are prevented by forming a metal gate electrode having an average grain size of 30 nm or less on a gate insulating film.... | 08/07/2001 |
| 6246096 | Totally self-aligned transistor with tungsten gate A totally self-aligned transistor with a tungsten gate. A single mask is used to align the source, drain, gate and isolation areas. Overlay error is greatly reduced by the use of a single mask for these regions. A mid-gap electrode is also self-aligned to... | 06/12/2001 |
| 6245620 | Method for foaming MOS transistor having bi-layered spacer A method is provided for forming a MOS transistor in a highly integrated semiconductor device. In this method a gate pattern is initially formed over a semiconductor substrate. A first dielectric film is then formed over the gate pattern at a first temper... | 06/12/2001 |
| 6197642 | Method for manufacturing gate terminal A method for manufacturing a gate terminal comprising the steps of providing a substrate, then forming and patterning an oxide layer to form a gate region. Next, a gate oxide layer and a crystalline silicon layer are formed in the gate region. This is fol... | 03/06/2001 |
| 6184113 | Method of manufacturing a gate electrode in a semiconductor device The present invention relates to a method for manufacturing a semiconductor device having a gate electrode (e.g. tungsten gate electrode) of low resistivity. In the method for manufacturing a semiconductor device, a conductive sacrifice polysilicon patter... | 02/06/2001 |
| 6171915 | Method of fabricating a MOS-type transistor To provide a method of fabricating a MOS-type transistor of a LDD structure with a gate electrode made of molybdenum, which brings about a reduction in the amount of overlapping between the gate electrode and source/drain, a gate electrode is made of moly... | 01/09/2001 |
| 6140167 | High performance MOSFET and method of forming the same using silicidation and junction implantation prior to gate formation A method is presented for forming a transistor wherein a silicide layer is formed upon an impurity region of a semiconductor substrate. After forming the silicide layer, a gate structure is preferably formed upon an exposed portion of the semiconductor su... | 10/31/2000 |
| 6136625 | Method of manufacturing an active matrix panel In the formation and structure of a thin film transistor (TFT), an insulator is formed to cover the surface of the transistor gate electrode, which electrode is separated from an underlying semiconductor layer, having defined source, drain and channel reg... | 10/24/2000 |
| 6133129 | Method for fabricating a metal structure with reduced length that is beyond photolithography limitations A metal structure is fabricated with a reduced length that is beyond that achievable from photolithography by using a silicidation anneal to control the reduced length. Generally, the present invention includes a step of forming a base metal structure on ... | 10/17/2000 |
| 6121094 | Method of making a semiconductor device with a multi-level gate structure The present invention is directed to a new semiconductor device and a method for making same. The semiconductor device is comprised of a gate dielectric layer, a conductor layer, and a metal oxide layer positioned between the gate dielectric layer and the... | 09/19/2000 |
| 6091122 | Fabrication of mid-cap metal gates compatible with ultra-thin dielectrics A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten... | 07/18/2000 |
