Class 257/E21.2 - Conductor comprising metal or metallic silicide formed by deposition e.g., sputter deposition, i.e., without silicidation reaction (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.198. This subclass
No. of patents: 356
Last issue date: 10/07/2008

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Number	Title	Issue Date
7432216	Semiconductor device and manufacturing method thereof The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4....	10/07/2008
7425489	Self-aligned shallow trench isolation A method of making a semiconductor structure includes etching an isolation oxide. The isolation oxide is in a substrate, a gate layer is on the substrate, a patterned metallic layer is on the gate layer, and a first patterned etch-stop layer is on the metallic layer...	09/16/2008
7399670	Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed A method of forming transistor gate structures in an integrated circuit device can include forming a high-k gate insulating layer on a substrate including a first region to include PMOS transistors and a second region to include NMOS transistors. A polysilicon gate ...	07/15/2008
7388228	Display device and method of manufacturing the same Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either b...	06/17/2008
7381657	Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed...	06/03/2008
7326621	Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate A method of fabricating a recess channel array transistor. Using a mask layer pattern having a high etch selectivity with respect to a silicon substrate, the silicon substrate and an isolation insulating layer are etched to form a recess channel trench. After formin...	02/05/2008
7271081	Metal/ZnOx/metal current limiter A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method includes the steps of: providing a substrate; forming an MSM bottom electrode overlying the substrate; forming a ZnO...	09/18/2007
7256125	Method of manufacturing a semiconductor device For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film s...	08/14/2007
7232751	Semiconductor device and manufacturing method therefor According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced ...	06/19/2007
7223660	Flash assisted annealing The present disclosure relates to a rapid thermal processing system that may be useful for processing semiconductor devices. A flash lamp may be utilized to provide pulse heating of a semiconductor for annealing or other purposes. A sensor may be provided to sense a...	05/29/2007
6703296	Method for forming metal salicide A method for forming a metal salicide layer on a shallow junction is described. A substrate having a gate structure thereon and a shallow junction therein is provided. An atomic layer deposition (ALD) process is then performed to deposit a tungsten salici...	03/09/2004
6703303	Method of manufacturing a portion of a memory Metal nitride and metal oxynitride extrusions often form on metal suicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of selectively removing such extrusions. In one embodiment, a nov...	03/09/2004
6699755	Method for producing a gate A method for producing a gate on a semiconductor substrate. The semiconductor substratehas a first oxide layer, a conductive layer, a silicide layer, and a hard mask formed thereon. The method includes defining the hard mask to form a pattern of the gate,...	03/02/2004
6699744	Method of forming a MOS transistor of a semiconductor device The disclosure relates to a method of forming a MOS transistor of a semiconductor device and, more particularly, to a method of forming a PMOS transistor of a semiconductor device that minimizes temporary reinforcement and diffusion of dopants for control...	03/02/2004
6699786	Method for forming a semiconductor device that uses a low resistance tungsten silicide layer with a strong adherence to an underlayer Tungsten silicide WSix is grown through reduction of WF6 with SiCl2 H2, and the flow rate between WF6 and SiCl2 H2 is controlled in such a manner that the composition ratio x ranges ...	03/02/2004
6696346	Method of manufacturing semiconductor device It is an object of the present invention to provide a semiconductor device capable of decreasing electric resistance of a lower electrode provided therein, as well as capable of accurately responding to external signals having high frequencies inputted th...	02/24/2004
6693354	Semiconductor structure with substantially etched nitride defects protruding therefrom Metal nitride and metal oxynitride extrusions often form on metal silicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of selectively removing such extrusions. In one embodiment, a no...	02/17/2004
6693022	CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition...	02/17/2004
6686275	Method of selectively removing metal nitride or metal oxynitride extrusions from a semmiconductor structure Metal nitride and metal oxynitride extrusions often form on metal silicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of selectively removing such extrusions. In one embodiment, a no...	02/03/2004
6674139	Inverse T-gate structure using damascene processing A field effect transistor has an inverse-T gate conductor having a thicker center portion and thinner wings. The wings may be of a different material different than the center portion. In addition, gate dielectric may be thicker along edges than in the ce...	01/06/2004
6660587	Method for forming a gate electrode in a semiconductor device A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stack...	12/09/2003
6653225	Method for forming gate electrode structure with improved profile and gate electrode structure therefor A gate electrode, in which the slope of the profile of a gate electrode forming material layer, for example, a refractory metal silicide layer is prevented from being decreased due to thermal expansion by patterning a refractory metal silicide layer after...	11/25/2003
6649466	Method of forming DRAM circuitry In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising l...	11/18/2003
6649518	Method of forming a conductive contact An opening is formed within insulative material to proximate a silicon comprising substrate. Titanium is deposited within the opening to form a first layer comprising titanium suicide. It is exposed to a nitrogen containing plasma effective to transform a...	11/18/2003
6645803	Method for modifying the doping level of a silicon layer A method for modifying the doping level of a doped silicon layer including the steps of coating the silicon layer with a silicide layer made of a refractory metal, and heating the interface region between the silicon and the silicide to a predetermined te...	11/11/2003
6642621	Capacitor-type semiconductor device It is an object of the present invention to provide a semiconductor device capable of decreasing electric resistance of a lower electrode provided therein, as well as capable of accurately responding to external signals having high frequencies inputted th...	11/04/2003
6642585	Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same The present invention provides a semiconductor device, comprising a gate electrode of a stacked structure consisting of a polysilicon layer and a metal layer, a cap insulating film formed on the gate electrode, and a gate side wall film formed on the side...	11/04/2003
6641867	Methods for chemical vapor deposition of tungsten on silicon or dielectric In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon wi...	11/04/2003
6638803	Semiconductor device and method for manufacturing the same Isolation regions 12 are formed on a silicon substrate 10 to isolate NMOS and PMOS regions in which to form NMOS and PMOS transistors respectively. A silicon oxide film 14 and an amorphous silicon film 16 are formed as a gate insulating film on the silico...	10/28/2003
6635939	Boron incorporated diffusion barrier material A diffusion barrier layer comprising TiNx By is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the...	10/21/2003
6635540	Method for using thin spacers and oxidation in gate oxides A method for forming a lightly doped drain (LDD) field effect transistor uses very thin first sidewall spacers over the gate sidewalls, in which annealing/oxidation of the sidewall spacers results in (a) the rounding of corner portions of the gate structu...	10/21/2003
6630391	Boron incorporated diffusion barrier material A diffusion barrier layer comprising TiNx By is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the...	10/07/2003
6627525	Method for preventing polycide gate spiking A method for preventing polycide gate spiking, which essentially comprises the following steps: forms an oxide layer on a substrate; forming a polysilicon layer on the oxide layer; sputtering a barrier layer on the polysilicon layer; performing a first ra...	09/30/2003
6624057	Method for making an access transistor Methods are disclosed for the fabrication of novel polysilicon structures having increased surface areas to achieve lower resistances after silicidation. The structures are applicable, for example, to semiconductor interconnects, polysilicon gate, and cap...	09/23/2003
6624095	Method for manufacturing a semiconductor device A wafer 38 having an exposed portion of silicon is transferred to a treatment chamber for lamp annealing. The atmosphere of the treatment chamber 32 is converted to a reduced pressure atmosphere (500 Torr) of an inert gas (N2). The wafer 38 is ...	09/23/2003
6617250	Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising l...	09/09/2003
6613654	Fabrication of semiconductor devices with transition metal boride films as diffusion barriers An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming t...	09/02/2003
6614064	Transistor having a gate stick comprised of a metal, and a method of making same The present invention is generally directed to a transistor having a gate stack comprised of a metal, and a method of making same. In one illustrative embodiment, the transistor is comprised of a gate stack comprised of a gate insulation layer positioned ...	09/02/2003
6614082	Fabrication of semiconductor devices with transition metal boride films as diffusion barriers An integrated circuit has a multi-layer stack such as a gate stack or a digit line stack disposed on a layer comprising silicon. A conductive film is formed on the transition metal boride layer. A process for fabricating such devices can include forming t...	09/02/2003
6611032	Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures The invention encompasses stacked semiconductor devices including gate stacks, wordlines, PROMs, conductive interconnecting lines, and methods for forming such structures. The invention also includes a method of forming a transistor gate comprising: a) fo...	08/26/2003

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Class 257/E21.2 - Conductor comprising metal or metallic silicide formed by deposition e.g., sputter deposition, i.e., without silicidation reaction (EPO)