Class 257/E21.193 - On single crystalline silicon (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.192. This subclass
No. of patents: 676
Last issue date: 09/30/2008

«First «Previous1 2 3 4 5 6 7 8 9 10 11 Next»Last»

Number	Title	Issue Date
7429539	Nitriding method of gate oxide film A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a plan...	09/30/2008
7405131	Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor The example embodiments disclose devices and methods to prevent silicide strapping of the Source/Drain to Body in semiconductor devices with S/D stressor. We provide isolation regions in the substrate and a gate structure over the substrate. We form recesses in the ...	07/29/2008
7365027	ALD of amorphous lanthanide doped TiOfilms The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOx) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety...	04/29/2008
7361613	Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ...	04/22/2008
7348222	Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present inventio...	03/25/2008
7320943	Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same Disclosed is a capacitor with a dielectric layer having a low equivalent oxide thickness compared to a HfO2 layer and capable of decreasing a level of a leakage current incidence and a method for fabricating the same. Particularly, the capacitor includes:...	01/22/2008
7282415	Method for making a semiconductor device with strain enhancement A semiconductor device with strain enhancement is formed by providing a semiconductor substrate and an overlying control electrode having a sidewall. An insulating layer is formed adjacent the sidewall of the control electrode. The semiconductor substrate and the co...	10/16/2007
7282403	Temperature stable metal nitride gate electrode An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is charact...	10/16/2007
7268047	Semiconductor device and method for manufacturing the same A gate insulating film on a silicon substrate of includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the t...	09/11/2007
7250375	Substrate processing method and material for electronic device A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of s...	07/31/2007
7238625	Method for processing a semiconductor device comprising a silicon-oxy-nitride dielectric layer The present invention provides a method for processing a semiconductor device wherein a dielectric layer is partially converted into a silicon-oxy-nitride by incorporation of nitrogen atoms into the dielectric layer, which comprises a silicon oxide. Before the intro...	07/03/2007
7235448	Dielectric layer forming method and devices formed therewith Embodiments in accordance with the present invention provide alternative materials, and methods of forming such materials, that are effective as dielectric layers. Such embodiments include forming metal-containing dielectric layers over a silicon-containing substrat...	06/26/2007
7232731	Method for fabricating transistor of semiconductor device A method for fabricating a transistor of semiconductor is disclosed. A disclosed method comprises: forming an STI structure and a well region in a silicon substrate; forming a first dummy gate electrode including spacers and a first gate oxide layer on the well regi...	06/19/2007
7232772	Substrate processing method A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a plan...	06/19/2007
7205217	Method for forming trench gate dielectric layer A method for forming a trench gate dielectric layer is described. First, a substrate having a trench therein is provided. An in-situ steam generated oxidation process is performed to form a sacrificial layer on the surface of the trench. Then, the sacrificial layer ...	04/17/2007
7195961	SOI structure comprising substrate contacts on both sides of the box, and method for the production of such a structure Disclosed are an arrangement and a production method for electrically connecting (20) active semiconductor structures (40) in the monocrystalline silicon layer (12) located on the front face of silicon-on-insulator semiconductor wafers (SOI; ...	03/27/2007
7192887	Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same A method of manufacturing a MOS transistor is provided that achieves high-speed devices by reducing nitrogen diffusion to a silicon substrate interface due to redistribution of nitrogen and further suppressing its diffusion to a polysilicon interface, which prevents...	03/20/2007
7189623	Semiconductor processing method and field effect transistor A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ...	03/13/2007
7189662	Methods of forming semiconductor constructions The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive material of the substrate to deuterium-enriched steam. In other aspe...	03/13/2007
7176094	Ultra-thin gate oxide through post decoupled plasma nitridation anneal DPN (decoupled plasma nitridation) is used to improve robustness of ultra thin gate oxides. Conventionally, this is followed by an anneal in pure helium to remove structural defects in the oxide. However, annealing under these conditions has been found to cause a de...	02/13/2007
7169716	Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which s...	01/30/2007
7163901	Methods for forming thin film layers by simultaneous doping and sintering A method is provided for forming a thin film layer on a substrate. The method includes the steps of doping a thin surface layer on the substrate with low energy ions of a dopant material, and heating the thin surface layer sufficiently to produce a reaction between ...	01/16/2007
7160818	Semiconductor device and method for fabricating same An aspect of the present invention includes; a silicon oxynitride film having an oxynitride layer which is formed on at least the surface of a silicon substrate and in which nitrogen atoms are in a three-coordinate bond state, and a silicon oxide layer which is form...	01/09/2007
7151299	Semiconductor device and its manufacturing method The present invention provides a semiconductor device structure and an easy-to-use method for manufacturing thereof enabling to suppress wafer contamination and to form the semiconductor device superior in control and uniformity of the film thickness in the semicond...	12/19/2006
7135421	Atomic layer-deposited hafnium aluminum oxide A dielectric film containing HfAlO3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer depos...	11/14/2006
7115456	Sequential lateral solidification device and method of crystallizing silicon using the same A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed i...	10/03/2006
7109131	System and method for hydrogen-rich selective oxidation The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich ox...	09/19/2006
7105411	Methods of forming a transistor gate A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ...	09/12/2006
6900481	Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors A method for forming a transistor includes forming a gate dielectric layer over a portion of a semiconductor substrate, the substrate being substantially free of silicon; defining a gate electrode over a portion of the gate dielectric layer; and introducing ions int...	05/31/2005
RE38674	Process for forming a thin oxide layer A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is...	12/21/2004
6703708	Graded thin films Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of imp...	03/09/2004
6703278	Method of forming layers of oxide on a surface of a substrate A method of forming oxide layers of different thickness on a substrate is described, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a red...	03/09/2004
6699776	MOSFET gate insulating film and method of manufacturing the same A semiconductor device where an interface circuit operating on a high power supply voltage and exchanging signals and data with an external device and an internal circuit operating on a low power supply voltage are integrated in a single chip. The interfa...	03/02/2004
6700170	Insulated gate transistor having a gate insulator containing nitrogen atoms and fluorine atoms An insulated gate transistor in which nitride oxide film having a nitrogen concentration of 1×1020 (/cm3) or more and containing a halogen element is used as a gate insulator. Because the gate insulator has a nitrogen concentration ...	03/02/2004
6700171	Gate dielectric The use of doped or undoped rare-earth silicates, according to the formula MSix Oy wherein M is a rare-earth element, in semiconductor technology is disclosed. In particular, gadolinium silicate as a gate dielectric of a metal-insula...	03/02/2004
6696332	Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing Methods are disclosed for forming gate dielectrics for MOSFET transistors, wherein a bilayer deposition of a nitride layer and an oxide layer are used to form a gate dielectric stack. The nitride layer is formed on the substrate to prevent oxidation of th...	02/24/2004
6696327	Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, then forming a capping layer on the high-k gate dielectric layer. After oxidizing the capping layer to form a capping die...	02/24/2004
6696735	Semiconductor device and method for fabricating the same A semiconductor device according to one aspect of the present invention, is a semiconductor device comprising: a first MOS field effect transistor of an n-type including a first oxynitride film as a first gate insulator film; and a second MOS field effect...	02/24/2004
6693051	Silicon oxide based gate dielectric layer A semiconductor device having a dielectric layer formed between a first and a second conductive layer. The dielectric layer comprising a layer of silicon oxide, SiOXࣘ2, having a dielectric constant greater than about 3.9 and less than or equa...	02/17/2004
6693012	Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETs A process for the fabrication of an integrated circuit which provides a FET device having reduced GIDL current is described. A semiconductor substrate is provided wherein active regions are separated by an isolation region, and a gate oxide layer is form ...	02/17/2004

«First «Previous1 2 3 4 5 6 7 8 9 10 11 Next»Last»

PatentStorm

Did You Know...

PatentStorm News

Class 257/E21.193 - On single crystalline silicon (EPO)