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| Number | Title | Issue Date |
| 7432183 | Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the same A method of forming a thin film including zirconium titanium oxide including introducing a reactant including a mixture of a zirconium precursor and a titanium precursor onto a substrate, and introducing an oxidizing agent onto the substrate to form a solid material... | 10/07/2008 |
| 7416907 | Semiconductor device and method for forming the same A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitr... | 08/26/2008 |
| 7371637 | Oxide-nitride stack gate dielectric A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and t... | 05/13/2008 |
| 7348644 | Semiconductor device and method of manufacturing semiconductor device Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an elec... | 03/25/2008 |
| 7300838 | Semiconductor device and method of manufacturing semiconductor device Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an elec... | 11/27/2007 |
| 7297641 | Method to form ultra high quality silicon-containing compound layers Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon p... | 11/20/2007 |
| 7294582 | Low temperature silicon compound deposition Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using... | 11/13/2007 |
| 7217582 | Method for non-damaging charge injection and a system thereof A method and system for injecting charge includes providing a first material on a second material and injecting charge into the first material to trap charge at an interface between the first and second materials. The thickness of the first material is greater than ... | 05/15/2007 |
| 7205217 | Method for forming trench gate dielectric layer A method for forming a trench gate dielectric layer is described. First, a substrate having a trench therein is provided. An in-situ steam generated oxidation process is performed to form a sacrificial layer on the surface of the trench. Then, the sacrificial layer ... | 04/17/2007 |
| 7169673 | Atomic layer deposited nanolaminates of HfO/ZrOfilms as gate dielectrics A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is ... | 01/30/2007 |
| 7153780 | Method and apparatus for self-aligned MOS patterning A method of forming a thin film stack on a substrate, wherein the thin film stack includes at least a polysilicon layer and an oxide layer; forming a hardmask layer on the thin film stack; forming an anti-reflective coating (ARC) layer on the hardmask layer; pattern... | 12/26/2006 |
| 6686264 | Methods of forming binary noncrystalline oxide analogs of silicon dioxide A non-crystalline oxide is represented by the formula: ABO4 wherein A is an element selected from Group IIIA of the periodic table; and B is an element selected from Group VB of the periodic table.... | 02/03/2004 |
| 6680261 | Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layer Embodiments of the present invention are directed to a method of reducing boron outgassing at trench power IC's oxidation process for the sacrificial oxide layer whereby the threshold voltage of the power ICs can be improved and the yield of the product c... | 01/20/2004 |
| 6635589 | Methods of heat treatment and heat treatment apparatus for silicon oxide films Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a di... | 10/21/2003 |
| 6586346 | Method of forming an oxide film A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The... | 07/01/2003 |
| 6563154 | Polysilicon layer having improved roughness after POCl3 doping An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630° C. is used. Then, when the intended th... | 05/13/2003 |
| 6559014 | Preparation of composite high-K / standard-K dielectrics for semiconductor devices A semiconductor device and a method of making the semiconductor device having a composite dielectric layer including steps of providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric mater... | 05/06/2003 |
| 6552403 | Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics The invention generally relates to oxides that may be used in conjunction with integrated circuit devices. The oxides are non-crystalline. The oxides are represented by the formula: ABO4, wherein A is an element selected form Group IIIA of the ... | 04/22/2003 |
| 6534421 | Method to fabricate thin insulating film The invention grows SiO2 films over silicon at temperatures as low as room temperature and at pressures as high as 1 atmosphere. The lower temperature oxidation is made possible by creation of oxygen atoms and radicals by adding noble gas(es) a... | 03/18/2003 |
| 6528358 | Semiconductor device and method for fabricating the same A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon f... | 03/04/2003 |
| 6504174 | Semiconductor device and method for fabricating the same A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon f... | 01/07/2003 |
| 6465284 | Semiconductor device and method for manufacturing the same A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, a... | 10/15/2002 |
| 6383926 | Method of manufacturing a transistor A method of manufacturing a thin film transistor (TFT) is disclosed comprising source and drain electrodes joined by a semiconductor channel layer, a gate insulating layer formed from at least two sublayers and a gate electrode. The method comprising the ... | 05/07/2002 |
| 6316339 | Semiconductor device and production method thereof On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600° C.... | 11/13/2001 |
| 6221788 | Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate The semiconductor of the present invention comprises at least an oxide film and a metal thin film on the surface of the semiconductor. The metal thin film includes a metal serving as an oxidation catalyst and has a thickness in the range of 0.5-30 nm. The... | 04/24/2001 |
| 6211928 | Liquid crystal display and method for manufacturing the same A liquid crystal display includes a substrate; a transistor over the substrate, the transistor having a gate, a source, and a drain; a passivation layer over the transistor; a light shielding layer over a portion of the passivation layer over the transist... | 04/03/2001 |
| 6210997 | Semiconductor device and method for manufacturing the same A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, a... | 04/03/2001 |
| 6207513 | Spacer process to eliminate corner transistor device A method for forming spacers for preventing formation of parasitic corner devices in transistors includes etching trenches into a semiconductor substrate to form an active area region, lining the trenches and the active area region with a first dielectric... | 03/27/2001 |
| 6168980 | Semiconductor device and method for forming the same A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone... | 01/02/2001 |
| 6150283 | Thin film transistor fabrication method, active matrix substrate fabrication method, and liquid crystal display device To provide a TFT fabrication method capable of forming on a large-surface area substrate with uniform film thickness and at high deposition rate of film, while being a low-temperature process, a high-quality gate insulation film having good charge behavio... | 11/21/2000 |
| 6100954 | Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing A thin film transistor substrate for a liquid crystal display includes a substrate; a thin film transistor over the substrate, the thin film transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer; and a protection ... | 08/08/2000 |
| 6069388 | Semiconductor device and production method thereof On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600° C.... | 05/30/2000 |
| 6063654 | Method of manufacturing a thin film transistor involving laser treatment Defects at the grain boundaries of a crystal silicon film, which has been crystallized from an amorphous silicon film, are passivated without using a hydrogen plasma treatment. An underlying film and a crystal silicon film which has been crystallized from... | 05/16/2000 |
| 6018182 | Insulating gate field effect semiconductor device and method of manufacturing the same An insulating gate field effect semiconductor device having a gate insulating film of high resistance to moisture adsorption, wherein trap densities in the gate insulator film and at the interface between a channel semiconductor film and the gate insulato... | 01/25/2000 |
| 5976989 | Thin film transistor fabrication method, active matrix substrate fabrication method, and liquid crystal display device To provide a TFT fabrication method capable of forming on a large-surface area substrate with uniform film thickness and at high deposition rate of film, while being a low-temperature process, a high-quality gate insulation film having good charge behavio... | 11/02/1999 |
| 5972437 | Method for fabricating a thin film semiconductor device To promote the characteristic of an interface between a gate insulating film and a semiconductor and control the threshold voltage, in forming the insulating film, a surface on which the insulating film is to be formed is previously exposed to activated o... | 10/26/1999 |
| 5970384 | Methods of heat treating silicon oxide films by irradiating ultra-violet light Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a di... | 10/19/1999 |
| 5966594 | Semiconductor device and method for manufacturing the same A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, a... | 10/12/1999 |
| 5936291 | Thin film transistor and method for fabricating the same The thin film transistor of this invention is formed on a substrate and includes an active layer and a first insulating film and a second insulating film sandwiching the active layer, wherein the overall polarity of fixed charges contained in the first in... | 08/10/1999 |
| 5907780 | Incorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantation An integrated circuit fabrication process is provided for forming silicon dioxide in the vacancies of a gate dielectric comprising metal oxide. The gate dielectric has a relatively high dielectric constant to promote high capacitive coupling between two c... | 05/25/1999 |
