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Class 257/E21.189 - For charge-coupled device (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.188. This subclass
No. of patents: 5
Last issue date: 08/26/2008


NumberTitleIssue Date
7416908Method for fabricating a micro structure
A method for fabricating a micro structure includes depositing a first layer of a first material over a substrate; patterning a first hard mask over the first layer; depositing a second layer of a second material over the first layer and the first hard mask; pattern...
08/26/2008
7364960Methods for fabricating solid state image sensor devices having non-planar transistors
Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ...
04/29/2008
7253092Tungsten plug corrosion prevention method using water
Disclosed herein is a method of making integrated circuits. In one embodiment the method includes forming tungsten plugs in the integrated circuit and forming electrically conductive interconnect lines in the integrated circuit after formation of the tungsten plugs....
08/07/2007
7233038Self masking contact using an angled implant
A method of implanting, for example, a phosphorous plug over a charge collection region and a method of forming a contact over the phosphorous plug implant and charge collection region. The method allows implantation of phosphorous or other materials without contami...
06/19/2007
7125740Solid-state image pickup device and fabrication method thereof
A method of fabricating a solid-state image pickup device comprising forming mask patterns corresponding to patterns of first and third transfer electrodes, which are to be alternately arranged in each vertical transfer register formation region and which are to ext...
10/24/2006
 
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