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| Number | Title | Issue Date |
| 7247550 | Silicon carbide-based device contact and contact fabrication method A silicon carbide-based device contact and contact fabrication method employ a layer of poly-silicon on a SiC substrate, with the contact's metal layer deposited on top of the poly-silicon. Both Schottky and ohmic contacts can be formed. The poly-silicon layer can b... | 07/24/2007 |
| 6656823 | Semiconductor device with schottky contact and method for forming the same Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as Alx Ga1-x N and Inx Ga1-x N. At least one metal layer includ... | 12/02/2003 |
| 6524937 | Selective T-gate process A process of simultaneously forming a plurality of metal features on a substrate, in which at least one metal feature has undercut sides and at least one metal feature does not have undercut sides involves the application of a lower photoresist feature ha... | 02/25/2003 |
| 6521998 | Electrode structure for nitride III-V compound semiconductor devices In an electrode structure for a nitride III-V compound semiconductor device, a metallic nitride is used as an electrode material. A metallic material of the metallic nitride has a negative nitride formation free energy, and comprises at least one metal se... | 02/18/2003 |
| 6387783 | Methods of T-gate fabrication using a hybrid resist Methods for forming a T-gate on a substrate are provided that employ a hybrid resist. The hybrid resist specifically is employed to define a base of the T-gate on the substrate with very high resolution. To define a base of the T-gate, a hybrid resist lay... | 05/14/2002 |
| 6372613 | Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor In a semiconductor device, a gate electrode is formed by sequentially forming a Schottky metal film, a barrier metal film, and a low-resistance metal film from the lower side. The Schottky metal film or barrier metal film has a gap in a lower gate vertica... | 04/16/2002 |
| 6329227 | Method of patterning organic polymer film and method for fabricating semiconductor device An organic polymer film patterning method includes the steps of: defining a resist film on a selected area of a substrate; depositing an organic polymer film over the substrate by a plasma CVD process so that the resist film is covered with part of the or... | 12/11/2001 |
| 6294446 | Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode A high electron mobility transistor includes a channel layer for developing therein an electron gas layer having a substantially uniform electron gas density, and upper and lower high-resistance wide-band gap layers disposed respective over and beneath th... | 09/25/2001 |
| 6200885 | III-V semiconductor structure and its producing method A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a ... | 03/13/2001 |
| 6197667 | Structure and method for manufacturing Group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer Group III-V composites, which is used to manufacture Schottky contacts having the characteristics of higher energy gap, higher carriers mobility, etc., are applied for manufacturing high-speed devices. Therefore, in there years, Group III-V composite Scho... | 03/06/2001 |
| 6180528 | Method for forming a minute resist pattern and method for forming a gate electrode A method for forming a resist pattern includes the steps of: forming a dummy pattern on a semiconductor substrate using one type of a photosensitive resist; applying a resist mask on the semiconductor substrate so as to bury the dummy pattern using an opp... | 01/30/2001 |
| 6159861 | Method of manufacturing semiconductor device In a method of manufacturing a semiconductor device which has a semiconductor substrate, a channel layer formed on the semiconductor substrate and an insulating film deposited on the channel layer, an opening corresponding to a gate electrode pattern is f... | 12/12/2000 |
| 6100555 | Semiconductor device having a photosensitive organic film, and process for producing the same A recess is made in the semiconductor substrate. A gate electrode has a sectional shape of "T" to have a head overhanging portion and is made in the recess. The gate electrode having a head overhanging portion. A capacitance film is formed under the head ... | 08/08/2000 |
| 6100547 | Field effect type semiconductor device and method of fabricating the same A first electrode layer composed of Pt is formed on an operating layer, and a second electrode layer composed of a material which is different from Pt is formed on the operating layer so as to cover the first electrode layer. A buried electrode layer comp... | 08/08/2000 |
| 6087704 | Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer Group III-V composites, which is used to manufacture Schottky contacts having the characteristics of higher energy gap, higher carriers mobility, etc., are applied for manufacturing high-speed devices. Therefore, in there years, Group III-V composite Scho... | 07/11/2000 |
| 6066865 | Single layer integrated metal enhancement mode field-effect transistor apparatus An enhancement mode periodic table group III-IV semiconductor field-effect transistor device is disclosed. The disclosed transistor includes single metallization for ohmic and Schottky barrier contacts, a permanent non photosensitive passivation layer (a ... | 05/23/2000 |
| 6051484 | Semiconductor device and method of manufacturing thereof A method for manufacturing a semiconductor device, comprises the steps of: depositing a first insulating film on a semiconductor substrate, and then, applying a photo resist to the first insulating film to align and develop the photo resist to form a firs... | 04/18/2000 |
| 6051506 | Method of fabrication ultra-frequency semiconductor device A method for forming a T-shape gate having a length below 0.25 μm for use in ultra-frequency semiconductor devices is disclosed. The insulating layer is side-etched by using the gate mask pattern through a conventional photolithography, the length of the... | 04/18/2000 |
| 6037200 | Compound semiconductor device and fabrication method A WSi film is deposited on a semi-insulative GaAs substrate. Thereafter, a first Al mask and a second SiO2 mask are formed such that these two masks overlap on the WSi film. A SF6 /CF4 mixture, which contains a gas of SF | 03/14/2000 |
| 6020226 | Single layer integrated metal process for enhancement mode field-effect transistor A method for fabricating an enhancement mode periodic table group III-IV metal semiconductor metal field-effect transistor is described. The disclosed fabrication arrangement uses single metallization for ohmic and Schottky barrier contacts, employs initi... | 02/01/2000 |
| 6013926 | Semiconductor device with refractory metal element A semiconductor device includes a self-aligned refractory metal constituent in a recess in a semiconductor substrate and having the same plane pattern as a bottom surface of the recess. The width of the constituent is determined by the plane pattern of th... | 01/11/2000 |
| 5994728 | Field effect transistor and method for producing the same A method for producing a field effect transistor includes: a first step of forming an insulating film over a substrate; a second step of dry etching the insulating film to form a rectangular insulating pattern having side surfaces; a third step of forming... | 11/30/1999 |
| 5994753 | Semiconductor device and method for fabricating the same In a method for fabricating a semiconductor device, an insulating layer is formed on a semiconductor substrate, then a resist layer is formed on the insulating layer to have an opening therein. Next, removing the insulating layer at the bottom of the open... | 11/30/1999 |
| 5981319 | Method of forming a T-shaped gate The specification describes methods for making T-shaped metal gates for Schottky gate devices such as MESFETs and HEMTs. The method uses a bi-level photoresist technique to create a T-shaped feature for the gate structure. The metal gate is evaporated int... | 11/09/1999 |
| 5982036 | Multi-layered structure for ohmic electrode fabrication An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n+ ... | 11/09/1999 |
| 5970328 | Fabrication method of T-shaped gate electrode in semiconductor device A method for fabricating a T-shaped gate electrode of a high speed semiconductor device such as HEMTs which is applied to high speed logic circuit including low-noise receivers and power amplifiers having a frequency of X-band or more respectively, and MM... | 10/19/1999 |
| 5940697 | T-gate MESFET process using dielectric film lift-off technique An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps.... | 08/17/1999 |
| 5930610 | Method for manufacturing T-gate Method for manufacturing a T-gate useful for reducing a gate resistance, improving through-put, and simplifying an MMIC (monolithic microwave integrated circuit) process is disclosed, the method including the steps of depositing a first photoresist layer ... | 07/27/1999 |
| 5925902 | Semiconductor device having a schottky film with a vertical gap formed therein In a semiconductor device, a gate electrode is formed by sequentially forming a Schottky metal film, a barrier metal film, and a low-resistance metal film from the lower side. The Schottky metal film or barrier metal film has a gap in a lower gate vertica... | 07/20/1999 |
| 5923072 | Semiconductor device with metallic protective film A semiconductor device has a metal pattern composed of a material reacting on water and a metal protective film formed between an intrusion path of water and the metal pattern on the surface of a part of the metal pattern. The metal pattern is composed of... | 07/13/1999 |
| 5907177 | Semiconductor device having a tapered gate electrode A WSi film is deposited on a semi-insulative GaAs substrate. Thereafter, a first Al mask and a second SiO2 mask are formed such that these two masks overlap on the WSi film. A SF6 /CF4 mixture, which contains a gas of SF | 05/25/1999 |
| 5904554 | Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n+ ... | 05/18/1999 |
| 5876901 | Method for fabricating semiconductor device The method for fabricating a semiconductor device according to the present includes the steps of: forming an opening in an electron beam resist layer formed on a semiconductor substrate; forming an opening in a photoresist layer formed on the electron beam ... | 03/02/1999 |
| 5869365 | Method of forming T electrode in field effect transistor In a method of manufacturing a semiconductor device, an operating layer and a light-shielding film are sequentially formed to form a recess step on a semiconductor substrate. A first photoresist film is formed on the light-shielding film. The light-shield... | 02/09/1999 |
| 5861327 | Fabrication method of gate electrode in semiconductor device A fabrication method of a semiconductor device is disclosed. A T-shaped gate used for decreasing the gate resistance is adopted in fabricating an ultrahigh frequency and low-noise device. According to the present invention, a gate pattern is formed by a d... | 01/19/1999 |
| 5858824 | Method of forming fine electrode on semiconductor substrate A dielectric film is formed on a semiconductor substrate, and on the dielectric film an inorganic dielectric mask film is deposited by CVD. The mask film comprises a first component which is relatively high in etch rate by isotropic plasma etching and a s... | 01/12/1999 |
| 5856232 | Method for fabricating T-shaped electrode and metal layer having low resistance A method for fabricating a T-shaped gate electrode includes the steps of: forming a fine gate pattern on a semiconductor substrate; forming an insulating layer on the semiconductor substrate on which the gate pattern is formed, and forming a planarizing l... | 01/05/1999 |
| 5804474 | Method for forming a V-shaped gate electrode in a semiconductor device, and the structure of the electrode A method for forming a V-shaped gate electrode on a semiconductor substrate includes the following steps: A first gate opening is formed in a first resist between a source and a drain formed on a semiconductor substrate, and dummy openings are formed near... | 09/08/1998 |
| 5796131 | Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal A periodic table group III-IV metal semiconductor metal field-effect transistor device is described. The disclosed device includes single metalization for ohmic and Schottky barrier contacts, an elective permanent etch stop layer, a non-alloyed ohmic cont... | 08/18/1998 |
| 5776820 | Method of forming a high-frequency transistor T gate electrode A method of forming a T-type gate electrode of a high-frequency transistor having excellent high-frequency power transfer characteristic with no concave portions and protrusions. A first resist pattern having a first relatively narrow opening is formed on... | 07/07/1998 |
