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| Number | Title | Issue Date |
| 7361555 | Trench-gate transistors and their manufacture A trench-gate transistor has an integral first layer of silicon dioxide extending from the upper surface of the semiconductor body over top corners of each cell array trench. The integral first layer also provides a thin gate dielectric insulating layer for a thick ... | 04/22/2008 |
| 7355246 | Memory cell without halo implant Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with cha... | 04/08/2008 |
| 7247550 | Silicon carbide-based device contact and contact fabrication method A silicon carbide-based device contact and contact fabrication method employ a layer of poly-silicon on a SiC substrate, with the contact's metal layer deposited on top of the poly-silicon. Both Schottky and ohmic contacts can be formed. The poly-silicon layer can b... | 07/24/2007 |
| 6656843 | Single mask trench fred with enlarged Schottky area A single mask process is described for making a trench type fast recovery process. The single mask defines slots in a photoresist for locally removing strips of nitride and oxide from atop silicon and for subsequently etching trenches in the silicon. A bo... | 12/02/2003 |
| 6475926 | Substrate for high frequency integrated circuits A silicon substrate material based on silicon has a semi-insulating interior layer isolating the bulk of the substrate material from the top layers, where integrated circuits are to be built. The semi-insulating layer is created by producing submicron par... | 11/05/2002 |
| 6346465 | Semiconductor device with silicide contact structure and fabrication method thereof A fabrication method of a semiconductor device that realizes a simplified contact formation process is provided. After a single-crystal silicon substrate having a main surface is provided, a dielectric film having a contact hole uncovering the main surfac... | 02/12/2002 |
| 6201291 | Semiconductor device and method of manufacturing such a device A semiconductor device, for example an IC, having conductor tracks (3) of a metal (3) exhibiting a better conductance than aluminium, such as copper, silver, gold or an alloy thereof. The tracks are situated on an insulating layer (2) and are connected to... | 03/13/2001 |
| 6183857 | Substrate for high frequency integrated circuits A silicon substrate material based on silicon has a semi-insulating interior layer isolating the bulk of the substrate material from the top layers, where integrated circuits are to be built. The semi-insulating layer is created by producing submicron par... | 02/06/2001 |
| 6140214 | Semiconductor processing methods, semiconductor processing methods of forming diodes, and semiconductor processing methods of forming schottky diodes Semiconductor processing methods, semiconductor processing methods of forming diodes, and semiconductor processing methods of forming Schottky diodes are described. In one embodiment, a first layer of material is formed over a substrate. A second layer of... | 10/31/2000 |
| 6096629 | Uniform sidewall profile etch method for forming low contact leakage schottky diode contact A method for forming a Schottky diode. There is first provided a silicon layer. There is then formed upon the silicon layer an anisotropically patterned first dielectric layer which defines a Schottky diode contact region of the silicon layer. There is th... | 08/01/2000 |
| 6093638 | Method of forming an electrical contact in a substrate A TiNx layer is formed by disposing a substrate (18) in a chamber (12). A first reactant gas (40) comprising Ti, a second reactant gas (42) and a third reactant gas (44) comprising N are introduced into the chamber (12). By controlling the rati... | 07/25/2000 |
| 5883398 | Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration ... | 03/16/1999 |
| 5846860 | Method of making buried contact in DRAM technology A new method of forming an improved buried contact junction is described. Word lines are provided over the surface of a semiconductor substrate. A first insulating layer is deposited overlying the word lines. The first insulating layer is etched away wher... | 12/08/1998 |
| 5751016 | Device having a switch comprising a chromium layer A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration ... | 05/12/1998 |
| 5635414 | Low cost method of fabricating shallow junction, Schottky semiconductor devices Significant reduction in the cost of fabrication of shallow junction, Schottky or similar semiconductor devices without sacrifice of functional characteristics, while at the same time achieving the advantages is achieved, after the non-polishing cleaning ... | 06/03/1997 |
| 5569614 | Method of forming metal pattern including a schottky diode An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selec... | 10/29/1996 |
| 5552339 | Furnace amorphous-SI cap layer to prevent tungsten volcano effect A method of metallization using a tungsten plug is described. Semiconductor device structures are formed in and on a semiconductor substrate. An insulating layer covers the semiconductor structures and a contact hole has been opened through the insulating... | 09/03/1996 |
| 5525829 | Field effect transistor with integrated schottky diode clamp A MOSFET device is constructed with an integrated Schottky diode clamp connected between the source or drain terminal and the bulk terminal. In an illustrative implementation, one or more MOSFETs are formed in an n-well located in a p-type silicon substra... | 06/11/1996 |
| 5438218 | Semiconductor device with Shottky junction A semiconductor device is provided having a first semiconductor region comprising an n-type semiconductor and a second semiconductor region of an n-type semiconductor having a higher resistivity than the first semiconductor region. An insulation film is p... | 08/01/1995 |
| 5323053 | Semiconductor devices using epitaxial silicides on (111) surfaces etched in (100) silicon substrates In accordance with the present invention, a silicon device fabricated on a (100) silicon substrate is provided with a (111) slant surface and an electrical contact comprising epitaxial low Schottky barrier silicide is formed on the (111) surface. For exam... | 06/21/1994 |
| 5221638 | Method of manufacturing a Schottky barrier semiconductor device According to the present invention, there is provided a method of manufacturing a Schottky barrier semiconductor device with lesser variation of barrier height $c;B which may stably be adjusted in a wide range. A Schottky barrier is formed by combinati... | 06/22/1993 |
| 5155559 | High temperature refractory silicide rectifying contact A semiconductor device comprising a semiconducting diamond layer, (e.g. single crystal or polycrystalline), a refractory metal silicide layer adjacent the diamond layer for forming a rectifying contact therewith, and an annealed interface region between t... | 10/13/1992 |
| 5087322 | Selective metallization for high temperature semiconductors A method of selective metallization of high temperature semiconductors to produce ohmic or rectifying contacts includes modification of the surface of a high temperature semiconductor material and thereafter depositng metal thereon by chemical vapor depos... | 02/11/1992 |
| 5086014 | Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH4, H2 and B2 H... | 02/04/1992 |
| 5024954 | Method of improving high temperature stability of PTSI/SI structure A method of improving the high temperature stability of PtSi/Si structure is disclosed. A sufficient amount of fluorine-contained ion is implanted into the PtSi/Si structure or Pt/Si structure or Si substrate. The characteristics of the resulted PtSi/Si s... | 06/18/1991 |
| 4984037 | Semiconductor device with conductive rectifying rods A semiconductor device, specifically an FET, having a body which includes a matrix of semiconductor material, specifically silicon, having an array of individual rods of conductive material, specifically TaSi2, disposed therein. The rods form S... | 01/08/1991 |
| 4946803 | Method for manufacturing a Schottky-type rectifier having controllable barrier height A Schottky-type diode is fabricated by a process that enables the diodes conductor-to-semiconductor barrier height $c;B to be controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an... | 08/07/1990 |
| 4875082 | Schottky barrier photodiode structure A Schottky barrier photodiode for detecting infrared radiation uses implantation of metal ions to form a metal silicide. An annular N+ type silicon guard ring is formed in a p-type silicon substrate. Metal ions are implanted into the exposed surface area ... | 10/17/1989 |
| 4864378 | Schottky barrier infrared detector A method and resultant device is described for fabricating iridium silicide Schottky IR detectors in which a thin intermediate film of platinum is formed between the conventional iridium outer layer over a p-type silicon substrate with or without an n-typ... | 09/05/1989 |
| 4862244 | Semiconductor device having Schottky barrier between metal silicide and silicon A semiconductor device having a Schottky barrier junction formed between a metal silicide layer and a monocrystalline silicon layer is disclosed. A polycrystalline silicon layer is formed so as to make a contact with a portion of the surface of the monocr... | 08/29/1989 |
| 4816879 | Schottky-type rectifier having controllable barrier height A Schottky-type diode has a conductor-to-semiconductor barrier height $c;B that is controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an N-type semiconductor (24). The silicide la... | 03/28/1989 |
| 4803539 | Dopant control of metal silicide formation A structure and method are described for forming different metal silicide phases, using the same metallurgy and the same processing steps. A layer of metal is deposited on a silicon substrate and is heated to thermally convert the metal-silicon combinatio... | 02/07/1989 |
| 4755484 | Method of making a semimetal semiconductor contact A semiconductor contact system controls the boundary recombination velocity and optimizes the semiconductor transport phenomena and includes a microcrystalline layer of doped semiconductor microcrystals surrounded by a semiconductor oxide. The microcrysta... | 07/05/1988 |
| 4742017 | Implantation method for forming Schottky barrier photodiodes A Schottky barrier photodiode for detecting infrared radiation uses implantation of metal ions to form a metal silicide. An annular N+ type silicon guard ring is formed in a p-type silicon substrate. Metal ions are implanted into the exposed surface area ... | 05/03/1988 |
| 4724223 | Method of making electrical contacts Electrical contacts are made to conductive elements of an array which are embedded in a matrix of silicon with the conductive elements exposed at a surface. The surface is covered with silicon oxide, and an opening is made in the silicon oxide to expose a... | 02/09/1988 |
| 4720734 | Low loss and high speed diodes A diode having a Schottky barrier which permits bidirectional passage of minority carriers as well as majority carriers through the provision of a bidirectional conducting Schottky electrode that substitutes for the conventional Schottky electrode used in... | 01/19/1988 |
| 4719501 | Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 Å and/or a particular range of etching rate when etched with... | 01/12/1988 |
| 4700465 | Method of selectively making contact structures both with barrier metal and without barrier metal in a single process flow A semiconductor structure with ohmic contacts and variable resistance contacts has an interconnection pattern to the contacts including a first barrier metal in contact with the variable resistance contacts and a second metal contacting the barrier metal ... | 10/20/1987 |
| 4692991 | Method of controlling forward voltage across Schottky diode During the deposition of a metallic layer on an N-type semiconductive region to form a Schottky diode in a structure placed in a highly evacuated chamber, at least one selected gas is introduced into the chamber to control the forward voltage across the d... | 09/15/1987 |
| 4687537 | Epitaxial metal silicide layers A process of forming an epitaxial metal silicide layer on a silicon substrate is disclosed. A thin layer of a first metal that will form an oxide in preference to silicon is initially deposited on the substrate. A preferred first metal is titanium. A laye... | 08/18/1987 |
