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| Number | Title | Issue Date |
| 4125426 | Method of manufacturing semiconductor device A simplified method of manufacturing a semiconductor device is disclosed wherein a base region is formed on a silicon substrate and an impurity is diffused into the base region. Any insulating film present on the silcon substrate is removed, substrate and... | 11/14/1978 |
| 4089103 | Monolithic integrated circuit device construction methods Methods for monolithic integrated circuit construction are presented wherein component device-isolating region self-alignment is provided and also, where an element of the device is provided through independent dopant provision steps to allow design flexi... | 05/16/1978 |
| 4087571 | Controlled temperature polycrystalline silicon nucleation The diffusivity of an impurity in a layer of polycrystalline silicon is controlled by forming the polycrystalline silicon on a thin nucleating layer of polycrystalline silicon possessing a maximum {110} texture.... | 05/02/1978 |
| 4085499 | Method of making a MOS-type semiconductor device A method of making an MOS-type semiconductor device wherein the surface thereon for the conductors is flat. For this purpose, a polycrystalline silicon layer is provided and a part of the layer is selectively oxidized, so that the remaining portion of the... | 04/25/1978 |
| 4084987 | Method for manufacturing electrical solid state devices utilizing shadow masking and ion-implantation The present invention describes the manufacture of a chip having a stratum in which a number of diffusions are spaced from each other by boundaries whose widths is the width of a gap. The diffusion on one side of a boundary is formed by ion bombardment, a... | 04/18/1978 |
| 4074304 | Semiconductor device having a miniature junction area and process for fabricating same In a method for fabricating a semiconductor device, a polycrystalline film deposited on a main surface of a substrate is subjected to selective oxidation to form polycrystalline silicon electrode wiring paths separated by silicon oxide. An impurity of a c... | 02/14/1978 |
| 4063967 | Method of producing a doped zone of one conductivity type in a semiconductor body utilizing an ion-implanted polycrystalline dopant source A semiconductor body is coated at selected areas thereof with a polycrystalline or amorphous semiconductor layer, a dopant is ion-implanted into such polycrystalline or amorphous layer and the resultant structure is then subjected to diffusion conditions ... | 12/20/1977 |
| 4063973 | Method of making a semiconductor device A non-monocrystalline semiconductor layer which contains predetermined impurities is disposed on a semiconductor substrate. Then, on this semiconductor layer an oxide layer is formed which contains the same type impurities as in the semiconductor layer. T... | 12/20/1977 |
| 4063901 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device is disclosed, in which a polycrystalline silicon layer is formed over a semiconductor substrate coated with an insulating layer with a window and a first kind of impurity is doped to a first predetermined p... | 12/20/1977 |
| 4052229 | Process for preparing a substrate for MOS devices of different thresholds In a substrate, a process for forming a plurality of host regions of different conductivity types and dopant concentration levels. These various host regions include the channels of MOS field-effect devices, thereby providing devices of different voltage ... | 10/04/1977 |
| 4046607 | Method of manufacturing a semiconductor device A silicon layer is deposited over the insulating layer covering the surface of the semiconductor substrate and apertured to define a contact window through which the silicon layer is connected with a one-conductivity-type region formed in the semiconducto... | 09/06/1977 |
| 4029527 | Method of producing a doped zone of a given conductivity type in a semiconductor body The "emitter-dip effect" is eliminated by applying a layer of an undoped polycrystalline semiconductor onto the surface of a select zone to be doped in a semiconductor body, for example, such as on the emitter zone of a silicon body and then diffusing a s... | 06/14/1977 |
| 4013489 | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit A low resistance crossunder (interconnect) for n-channel, silicon gate integrated circuits, particularly useful where shallow source and drain regions are employed. The crossunder is formed in the substrate from a doped polycrystalline silicon layer which... | 03/22/1977 |
| 3940288 | Method of making a semiconductor device A method of making a semiconductor device capable of high-speed operation is disclosed in which when the current gain-bandwidth is increased by the formation of a shallow base region. A side etching process is used to decrease the base spreading resistanc... | 02/24/1976 |
