Did You Know...
...that Kleenex tissue was originally designed to be a gas mask filter? It was developed at the beginning of World War I to replace cotton, which was then in short supply as a surgical dressing.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7432141 | Large-grain p-doped polysilicon films for use in thin film transistors A method is disclosed to form a large-grain, lightly p-doped polysilicon film suitable for use as a channel region in thin film transistors. The film is preferably deposited lightly in situ doped with boron atoms by an LPCVD method at temperatures sufficiently low t... | 10/07/2008 |
| 7419886 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment... | 09/02/2008 |
| 7413939 | Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit A method of fabricating a silicon-germanium CMOS includes preparing a silicon substrate wafer; depositing an insulating layer on the silicon substrate wafer; patterning and etching the insulating layer; depositing a layer of polycrystalline germanium on the insulati... | 08/19/2008 |
| 7384860 | Method of manufacturing a semiconductor device The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-... | 06/10/2008 |
| 7375011 | Ex-situ doped semiconductor transport layer A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticl... | 05/20/2008 |
| 7364990 | Epitaxial crystal growth process in the manufacturing of a semiconductor device First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown,... | 04/29/2008 |
| 7358165 | Semiconductor device and method for manufacturing semiconductor device A crystallizing method that can control the orientation of crystal grains with the use of a metal element for promoting crystallization. In the method, the metal element for promoting crystallization is added to selectively form a crystalline semiconductor film, and... | 04/15/2008 |
| 7348222 | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present inventio... | 03/25/2008 |
| 7335539 | Method for making thin-film semiconductor device A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is co... | 02/26/2008 |
| 7317205 | Light emitting device and method of manufacturing a semiconductor device Semiconductor layers for serving as active layers of a plurality of thin film transistors in a pixel are arranged in the same direction and irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers. I... | 01/08/2008 |
| 7297983 | Method for fabricating an integrated circuit on a semiconductor substrate Integrated circuit device comprising a conductive layer and a poly-crystalline silicon layer, wherein the integrated circuit device further comprises an intermediate counter-stress layer. This intermediate counter-stress layer is arranged between the poly-crystallin... | 11/20/2007 |
| 7294539 | Semiconductor substrate, semiconductor device, method of manufacturing semiconductor substrate, and method of manufacturing semiconductor device A method of manufacturing a semiconductor device, includes: forming an insulating layer on a single crystal semiconductor substrate; forming a non-crystalline semiconductor layer on the insulating layer; forming an insulating film on the non-crystalline semiconducto... | 11/13/2007 |
| 7294857 | Polysilicon thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; form... | 11/13/2007 |
| 7273774 | Method for making thin-film semiconductor device A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is co... | 09/25/2007 |
| 7271041 | Method for manufacturing thin film transistor Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irrad... | 09/18/2007 |
| 7256109 | Isotropic polycrystalline silicon A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of... | 08/14/2007 |
| 7253010 | Method of deciding focal plane and method of crystallization using thereof A crystallization method is provided which improves a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes... | 08/07/2007 |
| 7247527 | Method for manufacturing semiconductor device, and laser irradiation apparatus It is an object of the present invention to provide a method for manufacturing a crystalline semiconductor film comprising the steps of crystallizing with the use of the metal element for promoting the crystallization to control the orientation and irradiating the l... | 07/24/2007 |
| 7227186 | Thin film transistor and method of manufacturing the same An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film ... | 06/05/2007 |
| 7223627 | Memory element and its method of formation A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass... | 05/29/2007 |
| 7220660 | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plur... | 05/22/2007 |
| 7217642 | Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical ... | 05/15/2007 |
| 7214592 | Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants Methods of forming semiconductor devices with a layered structure of thin and well defined layer of activated dopants, are disclosed. In a preferred method, a region in a semiconductor substrate is amorphized, after which the region is implanted with a first dopant ... | 05/08/2007 |
| 7186597 | Method of manufacturing transistors A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which i... | 03/06/2007 |
| 7176049 | Method of increasing a free carrier concentration in a semiconductor substrate A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free... | 02/13/2007 |
| 7141491 | Method for fabricating a semiconductor device Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amo... | 11/28/2006 |
| 7142297 | Method for simulating the movement of particles A method for determining the movement of particles, particularly impurities, in a medium, under the influence of a changing interface between two neighboring phases. In a first step, the temporal and/or local evolution of said interface is determined. In a second st... | 11/28/2006 |
| 7129522 | Semiconductor device and its manufacturing method Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temper... | 10/31/2006 |
| 7112516 | Fabrication of abrupt ultra-shallow junctions One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the... | 09/26/2006 |
| 7084081 | Display device and method of manufacturing the same A display device includes a display area composed of pixels in a matrix. Each pixel has a light-emitting element and a driving element to supply a driving current to the light-emitting element. The driving element includes a thin film transistor with a semiconductor... | 08/01/2006 |
| 6703293 | Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates A method of fabricating a Si1-X GeX film on a silicon substrate includes preparing a silicon substrate; epitaxially depositing a Si1-X GeX layer on the silicon substrate forming a Si1-X GeX... | 03/09/2004 |
| 6703289 | Method for forming crystalline silicon layer and crystalline silicon semiconductor device A plurality of linear catalytic metal element portions are arranged at predetermined intervals just on or just beneath an amorphous silicon layer, and, in this state, the amorphous silicon layer is heat treated to crystallize the amorphous silicon layer a... | 03/09/2004 |
| 6703268 | Method to fabricate an intrinsic polycrystalline silicon film A process to fabricate a thin film transistor using an intrinsic polycrystalline silicon film, by a method of: preparing a semiconductor assembly; forming an insulation layer on a substrate; forming a first amorphous silicon layer on said insulation layer... | 03/09/2004 |
| 6699771 | Process for optimizing junctions formed by solid phase epitaxy A method of forming a semiconductor device includes forming at least one amorphous region within an at least partially formed semiconductor device. The method also includes implanting a halogen species in the amorphous region of the at least partially for... | 03/02/2004 |
| 6699764 | Method for amorphization re-crystallization of Si1-xGex films on silicon substrates A method of fabricating a Si1-X GeX film on a silicon substrate includes preparing a silicon substrate; epitaxially depositing a Si1-X GeX layer on the silicon substrate forming a Si1-X GeX... | 03/02/2004 |
| 6696306 | Methods of fabricating layered structure and semiconductor device A method of fabricating a layered structure including a substrate, a first semiconductor layer with a first thermal expansion coefficient 댚, and a second semiconductor layer with a second thermal expansion coefficient 댛... | 02/24/2004 |
| 6692996 | Method for crystallizing silicon layer The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be... | 02/17/2004 |
| 6693044 | Semiconductor device and method of manufacturing the same A semiconductor device, which uses a crystalline silicon film having high crystallinity and a flat surface with few ridges and has high characteristics, and a method of manufacturing the semiconductor device are provided. According to the manufacturing me... | 02/17/2004 |
| 6686262 | Process for producing a photoelectric conversion device A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which is formed on the first semiconductor film and contains a r... | 02/03/2004 |
| 6682992 | Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into t... | 01/27/2004 |
