Class 257/E21.132 - Preparation of substrate for selective epitaxy (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.131. This subclass
No. of patents: 23
Last issue date: 10/21/2008

Number	Title	Issue Date
7439136	Method of forming a layer comprising epitaxial silicon The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline ma...	10/21/2008
7435691	Micromechanical component and suitable method for its manufacture A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm featuring a silicon-oxide layer having an opening that is formed by silicon-...	10/14/2008
7413966	Method of fabricating polysilicon thin film transistor with catalyst A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface o...	08/19/2008
7358544	Nitride semiconductor light emitting device A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-s...	04/15/2008
7307030	Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate 10, the step of removing the oxide to form a concavity 16 in the position from whi...	12/11/2007
7276416	Method of forming a vertical transistor The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline ma...	10/02/2007
7144779	Method of forming epitaxial silicon-comprising material The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline ma...	12/05/2006
7115489	Methods of growing epitaxial silicon Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided. ...	10/03/2006
6676764	Method for cleaning a substrate in selective epitaxial growth process The present invention discloses a method for cleaning a surface of a substrate where a silicon epitaxial layer will be formed before growing the silicon epitaxial layer in a selective epitaxial growth process. Firstly, a high temperature heating element i...	01/13/2004
6617261	Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substra...	09/09/2003
6482712	Method for fabricating a bipolar semiconductor device A method for fabricating a bipolar device, including the steps of forming an epitaxial growth retarding layer on a substrate at a predetermined angle, forming a collector layer on the substrate so that the collector layer is adjacent the epitaxial growth ...	11/19/2002
6451113	Method and apparatus for growing oriented whisker arrays A method for growing of oriented whisker arrays on a single-crystalline substrate consists in vapor-phase transport of the material to be crystallized from a solid-state source body of the same composition as the whiskers to the substrate coated with liqu...	09/17/2002
6440807	Surface engineering to prevent EPI growth on gate poly during selective EPI processing The present invention provides a method of formed a nitrided surface layer atop a polysilicon gate electrode that inhibits the growth of an epi silicon layer thereon. Specifically, the method of the present invention includes the steps of: forming a polys...	08/27/2002
6429061	Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation A strained Si CMOS structure is formed by steps which include forming a relaxed SiGe layer on a surface of a substrate; forming isolation regions and well implant regions in said relaxed SiGe layer; and forming a strained Si layer on said relaxed SiGe lay...	08/06/2002
6306734	Method and apparatus for growing oriented whisker arrays A method for growing of oriented whisker arrays on a single-crystalline substrate consists in vapor-phase transport of the material to be crystallized form a solid-state source body of the same composition as the whiskers to the substrate coated with liqu...	10/23/2001
6121120	Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer In a method for manufacturing a semiconductor device, an impurity diffusion region is formed within a semiconductor substrate. Then, a chemical dry etching process or a heating process is carried out to remove a contamination layer from the impurity diffu...	09/19/2000
6110278	Methods for and products of growth of single-crystal on arrayed nucleation sites (SCANS) defined in nucleation unfriendly substrates A template for seeding growth of a desired single-crystal material (e.g., Si, GaAs) is created by passing through a monocrystalline channelizing mask, in a channelizing direction thereof, at least one of a nucleation-friendly species (e.g., Si, Ga) and a ...	08/29/2000
6090666	Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal There are provided a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the use of the semiconductor nanocrystals, allows thickness of...	07/18/2000
6074936	Method of fabricating a quantum device A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, formi...	06/13/2000
6036773	Method for growing Group III atomic layer A Group III atomic layer required for fabrication of a semiconductor quantum nanostructure is grown to be properly restricted to a monolayer. A substrate is configured to have a fast-growth surface portion where growth of a Ga atomic layer proceeds at a relati...	03/14/2000
5970367	Double damascene pattering of silcon-on-insulator transistors The present invention is a technique for producing silicon-on-insulator MOS transistors by damascene patterning of source-drain regions in a thin film of amorphous silicon deposited on a layer of oxide grown on a silicon wafer, where the oxide has previou...	10/19/1999
5923057	Bipolar semiconductor device and method for fabricating the same A method for fabricating a bipolar device, including the steps of forming an epitaxial growth retarding layer on a substrate at a predetermined angle, forming a collector layer on the substrate so that the collector layer is adjacent the epitaxial growth ...	07/13/1999

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Class 257/E21.132 - Preparation of substrate for selective epitaxy (EPO)