Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 7411254 | Semiconductor substrate The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising an exposed elemental silicon containing surface. At least one of a cr... | 08/12/2008 |
| 7405131 | Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor The example embodiments disclose devices and methods to prevent silicide strapping of the Source/Drain to Body in semiconductor devices with S/D stressor. We provide isolation regions in the substrate and a gate structure over the substrate. We form recesses in the ... | 07/29/2008 |
| 7393710 | Fabrication method of multi-wavelength semiconductor laser device The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second ar... | 07/01/2008 |
| 7375374 | Method for repairing thin film transistor array substrate A thin film transistor array substrate and method for repairing the same are provided. Repairing lines are formed when the data lines on the thin film transistor array substrate are defined. Furthermore, the protruding portions and branches of common lines overlap w... | 05/20/2008 |
| 7358544 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-s... | 04/15/2008 |
| 7342261 | Light emitting device A light emitting device includes a substrate having a patterned surface and formed with a plurality of spaced apart cavities, and an epitaxial layer formed on the patterned surface of the substrate, having a patterned surface that is in face-to-face contact with the... | 03/11/2008 |
| 7291524 | Schottky-barrier mosfet manufacturing method using isotropic etch process A method of fabricating a transistor device for regulating the flow of electric current is provided wherein the device has Schottky-barrier metal source-drain contacts. The method, in one embodiment, utilizes an isotropic etch process prior to the formation of the m... | 11/06/2007 |
| 7276411 | Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described... | 10/02/2007 |
| 7265386 | Thin film transistor array substrate and method for repairing the same A thin film transistor array substrate and method for repairing the same are provided. Repairing lines are formed when the data lines on the thin film transistor array substrate are defined. Furthermore, the protruding portions and branches of common lines overlap w... | 09/04/2007 |
| 7224008 | Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell The invention relates to a manufacturing method for an insulated gate semiconductor device cell, comprising the steps of forming a cell window (3) in a layered structure that is located on top of a semiconductor substrate (1), forming at least one proc... | 05/29/2007 |
| 7220650 | Sidewall spacer for semiconductor device and fabrication method thereof An offset spacer layer for an LDD ion implantation process is formed by blanket deposition without photolithography and dry etch processes. The offset spacer layer remaining on LDD regions during an ion implantation process prevents a substrate from silicon loss and... | 05/22/2007 |
| 7122449 | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on... | 10/17/2006 |
| 7118952 | Method of making transistor with strained source/drain A method of fabricating a transistor comprises the steps of: forming a gate electrode above a substrate made of a first semiconductor material having a first lattice spacing, forming recesses in the semiconductor substrate at respective locations where a source regi... | 10/10/2006 |
| 6703255 | Method for fabricating a III nitride film Plural island-shaped crystal portions are formed on a first Al-including nitride base. The island-shaped crystal portions are made of a second nitride, and have a nitride film including a third nitride epitaxially grown thereon. The island-shaped crystal ... | 03/09/2004 |
| 6700179 | Method for growing GaN compound semiconductor crystal and semiconductor substrate The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to fo... | 03/02/2004 |
| 6682991 | Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth... | 01/27/2004 |
| 6679947 | Semiconductor substrate A thick GaN layer is grown on sapphire through an Au layer at a temperature lower than the melting point of 1064° C. of the Au layer, and temperature of a sample is raised to reach and exceed the melting point of the Au layer so that the Au layer is diss... | 01/20/2004 |
| 6674102 | Sti pull-down to control SiGe facet growth A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each... | 01/06/2004 |
| 6670204 | Semiconductor light emitting device and method for manufacturing the same A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type comp... | 12/30/2003 |
| 6670694 | Semiconductor device A surface orientation other than a (100) surface orientation is exposed to the surface portion of a silicon substrate having the (100) surface orientation, for example. A silicon epitaxial growth layer is formed only on a region containing a channel formi... | 12/30/2003 |
| 6667220 | Method for forming junction electrode of semiconductor device A method for forming a junction electrode of a semiconductor device where a gate is formed on a semiconductor substrate by using a predetermined device structure, a contact hole is formed by stacking an interlayer insulation film on the gate, and n-type a... | 12/23/2003 |
| 6667184 | Single crystal GaN substrate, method of growing same and method of producing same Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms f... | 12/23/2003 |
| 6667252 | Method of manufacturing compound semiconductor substrate A compound semiconductor substrate is manufactured by forming a higher-quality compound semiconductor layer having a smaller number of crystalline defects on a single-crystal substrate, and removing the single-crystal substrate without causing damage to t... | 12/23/2003 |
| 6657232 | Defect reduction in GaN and related materials A material with reduced surface defects includes a defect filter layer on an underlying material. The defect filter reduces dislocations and defects present in an underlying material. The defect filter include islands of one material formed on the underly... | 12/02/2003 |
| 6653166 | Semiconductor device and method of making same The method produces coherent dislocation-free regions from initially dislocated and/or defect-rich lattice mismatched layer grown on top of the substrate having a different lattice constant, which does not contain any processing steps before of after the ... | 11/25/2003 |
| 6649439 | Semiconductor-air gap grating fabrication using a sacrificial layer process An optical device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the... | 11/18/2003 |
| 6649494 | Manufacturing method of compound semiconductor wafer A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and t... | 11/18/2003 |
| 6645835 | Semiconductor film forming method and manufacturing method for semiconductor devices thereof A method for forming a semiconductor film capable allowing easy cleaning of the processing equipment and capable of forming an epitaxial film at low temperatures as well as a manufacturing method for semiconductor devices utilizing this forming method is ... | 11/11/2003 |
| 6635534 | Method of manufacturing a trench MOSFET using selective growth epitaxy A method of manufacturing a trench structure for a trench MOSFET, including the steps of providing a semiconductor substrate having a major surface, forming a dielectric pillar on the substrate major surface (the dielectric pillar extending substantially ... | 10/21/2003 |
| 6633056 | Hetero-integration of dissimilar semiconductor materials A method, structure and article of manufacture related to hetero-integration of dissimilar semiconductor materials. A mask is created on a semiconductor substrate, wherein the mask includes one or more openings, and each of the openings includes one or mo... | 10/14/2003 |
| 6627974 | Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the suppo... | 09/30/2003 |
| 6627520 | Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the suppo... | 09/30/2003 |
| 6623560 | Crystal growth method A crystal growth method includes forming a mask layer capable of impeding crystal growth on a substrate in such a way a first nitride semiconductor layer has irregularities at a surface thereof exposed at a window region opened at a part of the mask layer... | 09/23/2003 |
| 6620238 | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device A nitride semiconductor structure includes: a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface; and a nitride semiconductor film grown on the growth surface. A cavity is formed between the nitrid... | 09/16/2003 |
| 6621148 | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grow... | 09/16/2003 |
| 6617668 | Methods and devices using group III nitride compound semiconductor A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semicond... | 09/09/2003 |
| 6617261 | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substra... | 09/09/2003 |
| 6610144 | Method to reduce the dislocation density in group III-nitride films The present invention discloses a semiconductor film having a reduced dislocation density. The film comprises at least one interlayer structure, including a group III-nitride layer, a passivation interlayer disposed on the group III-nitride layer, interru... | 08/26/2003 |
| 6599362 | Cantilever epitaxial process A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the react... | 07/29/2003 |
| 6596186 | Mask for the selective growth of a solid, a manufacturing method for the mask, and a method for selectively growing a solid using the mask A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predete... | 07/22/2003 |
