Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 7399670 | Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed A method of forming transistor gate structures in an integrated circuit device can include forming a high-k gate insulating layer on a substrate including a first region to include PMOS transistors and a second region to include NMOS transistors. A polysilicon gate ... | 07/15/2008 |
| 7348222 | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present inventio... | 03/25/2008 |
| 7256125 | Method of manufacturing a semiconductor device For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film s... | 08/14/2007 |
| 7223641 | Semiconductor device, method for manufacturing the same, liquid crystal television and EL television A method for manufacturing a semiconductor device by a small number of processes and by a means with high usability of materials to have high-definition and a gate insulating with a high step coverage property is disclosed. According to the present invention, a meth... | 05/29/2007 |
| 7220632 | Method of forming a semiconductor device and an optical device and structure thereof An integration process where a first semiconductor protective layer and a second semiconductor protective layer are formed to protect the first and second semiconductor materials, respectfully, during processing to form an optical device, such as a photodetector, an... | 05/22/2007 |
| 7183585 | Semiconductor device and a method for the manufacture thereof To provide a semiconductor device that excels in the manufacturing efficiency and device reliability, and a method for the manufacture thereof. The side of a device is composed of scribed grooves 13 and a cleavage plane 100. ... | 02/27/2007 |
| 6239005 | Method of forming epitaxially grown semiconductor layer on metal layer and light emitting semiconductor device comprising said semiconductor layer In a method of forming a single crystal semiconductor directly on a metal layer, a metal layer is epitaxially grown on a surface an electrically insulating substrate having a single crystal structure, and a single crystal semiconductor layer is epitaxiall... | 05/29/2001 |
| 5863324 | Process for producing single crystal diamond film Provided is a process for economically producing single crystal diamond film with a large surface area by gas-phase synthesis. The process comprises depositing platinum film or platinum alloy film containing more than 50 atomic % of platinum on a basal su... | 01/26/1999 |
| 5751018 | Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled mon... | 05/12/1998 |
| 5743957 | Method for forming a single crystal diamond film A method of forming a single crystal diamond film in which a single crystal diamond film of large area can be formed at low cost, thereby making it possible to realize a large improvement in the properties of the diamond and also making possible the pract... | 04/28/1998 |
| 5686351 | Semimetal-semiconductor heterostructures and multilayers The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compa... | 11/11/1997 |
| 5213906 | Composite material comprising a layer of a III-V compound and a layer of rare earth pnictide, production process and application The present invention relates to a composite material. This material comprises at least one layer A of III-V compound and one epitaxial layer B on said layer of III-V compounds, the epitaxial layer corresponding to the empirical formula REPc, where RE is ... | 05/25/1993 |
| 5098861 | Method of processing a semiconductor substrate including silicide bonding A method for processing at least two semiconductor wafers for producing a partially processed semiconductor substrate which can be subsequently further processed utilizing conventional planar semiconductor processing techniques to achieve a complementary ... | 03/24/1992 |
| 5066355 | Method of producing hetero structure A method of producing a hetero structure, including the steps of depositing hydrogen atoms or halogen atoms onto a surface of a first single crystal layer formed of semiconductor or metal silicide, and forming a second single crystal layer on the first si... | 11/19/1991 |
| 5012476 | Device of semiconductor materials formed on a substrate having a different lattice parameter and application to a laser A device for use as a laser includes a component (C) of semiconductor material formed on a substrate (1) having a different lattice parameter. The substrate (1) is covered with a silicon layer (2) which is in turn covered with a matching superlattice (3) ... | 04/30/1991 |
| 4984033 | Thin film semiconductor device with oxide film on insulating layer A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer over the patter... | 01/08/1991 |
| 4901121 | Semiconductor device comprising a perforated metal silicide layer A method for producing, without etching, a perforated layer of epitaxial metal silicide, especially CoSi2, on a single crystal Si substrate, with epitaxial Si overlying the silicide layer. The layer thickness, and the number and size of the ope... | 02/13/1990 |
| 4822751 | Method of producing a thin film semiconductor device A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer, which is self-... | 04/18/1989 |
| 4814294 | Method of growing cobalt silicide films by chemical vapor deposition This invention relates to an improved method of depositing cobalt silicide films on a substrate by chemical vapor deposition at a temperature range of about 100°-400° C. By employing two separate precursors of, preferably, for cobalt, comprised of cobal... | 03/21/1989 |
| 4728626 | Method for making planar 3D heterepitaxial semiconductor structures with buried epitaxial silicides A 3D epitaxial structure is described in which metal compounds are formed in a semiconductor layer, the metal compounds being epitaxial with the semiconductor layer and having a top surface which is planar with the top surface of the semiconductor layer. ... | 03/01/1988 |
| 4717681 | Method of making a heterojunction bipolar transistor with SIPOS A wafer process flow encompasses an arbitray repeated layered structure of heteroepitaxial layers of silicon based films with process control throughout the strata of chemical potential and recombination velocity, suitable for both high performance MOS an... | 01/05/1988 |
| 4707197 | Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method Described is a method for producing metal silicide/silicon heterostructures. The method comprises depositing a very thin Si "template" layer on a relatively cold ( | 11/17/1987 |
| 4115625 | Sodium thallium type crystal on crystalline layer Relates to a composition of matter comprising a conductive sodium thallium type crystalline alloy substrate of LiZn, LiAl, LiGa, LiIn, NaTl or LiCd having crystalline silicon integrally overgrown thereon in an oriented crystal layer. Solar cells and semi-... | 09/19/1978 |
| 4053350 | Methods of defining regions of crystalline material of the group III-V compounds A thin coating of carbon is used as a mask to define regions of a crystalline material of the group III-V compounds. A carbon mask is coated on portions of a surface of a substrate and the masked substrate contacted with the group III-V material to deposi... | 10/11/1977 |
| 4053326 | Photovoltaic cell A photovoltaic cell includes a metal support which is coated with a metal having a low melting point on which a crystalline layer of a semiconductive material is deposited, the material being doped to form a p-n semiconductor. In preferred embodiments the... | 10/11/1977 |
| 4042447 | Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate Relates to a method for producing a product comprising crystalline silicon on a sodium thallium type substrate by application of silicon atoms gradually to that substrate whereby oriented overgrowth occurs and also to the product produced by said method. ... | 08/16/1977 |
