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| Number | Title | Issue Date |
| 7368823 | Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) formin... | 05/06/2008 |
| 7288490 | Increased alignment in carbon nanotube growth Method and system for fabricating an array of two or more carbon nanotube (CNT) structures on a coated substrate surface, the structures having substantially the same orientation with respect to a substrate surface. A single electrode, having an associated voltage s... | 10/30/2007 |
| 7285483 | Coated semiconductor wafer, and process and apparatus for producing the semiconductor wafer A susceptor configured to receive a semiconductor wafer for deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD) has a gas-permeable structure with a porosity of at least 15%, a density of from 0.5 to 1.5 g/cm3 | 10/23/2007 |
| 5656828 | Electronic component with a semiconductor composite structure The invention relates to a semiconductor composite structure for an electronic component. The semiconductor composite structure comprises a diamond layer, which is substantially undoped except for unavoidable impurities, one side of which is covered by a ... | 08/12/1997 |
| 5525537 | Process of producing diamond composite structure for electronic components The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on the growth substrate, and a diamond layer applied on top of... | 06/11/1996 |
| 5488232 | Oriented diamond film structures on non-diamond substrates The present invention provides a semiconductor device comprising a first layer of a metal silicide and a second layer on the first metal silicide layer; the second layer comprising a semiconducting diamond film. The present invention also provides a metho... | 01/30/1996 |
| 5306928 | Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer A semiconductor device utilizing a non-doped diamond layer between a substrate and an active diamond layer. Such a structure decreases the resistivity and increases the carrier density. Further, when contacts are formed on the active layer, this layer str... | 04/26/1994 |
| 5304461 | Process for the selective deposition of thin diamond film by gas phase synthesis Thin diamond films can be selectively deposited imagewise on a substrate by gas phase synthesis. The substrate may be either a silicon substrate or a basal thin diamond film formed beforehand on a substrate by gas phase synthesis. Where a silicon substrat... | 04/19/1994 |
| 5196366 | Method of manufacturing electric devices A method of manufacturing electric devices is described. Discrete single crystals are formed on a substrate to be coated. The formation of these crystals is carried out by forming discrete crystallization centers in the surface of the substrate and growin... | 03/23/1993 |
| 5144380 | Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate A semiconductor device utilizing a nondoped diamond layer between a substrate and an active diamond layer. Such a structure decreases the resistivity and increases the carrier density. Further, when contacts are formed on the active layer, this layer stru... | 09/01/1992 |
| 5086014 | Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH4, H2 and B2 H... | 02/04/1992 |
| 5006203 | Diamond growth method Preferred embodiments first adjust reactor conditions to grow a diamondlike film (114) on a silicon substrate (102). Reactor conditions are then adjusted to etch the diamondlike film surface, providing a high density of diamond nucleation sites (108). Fin... | 04/09/1991 |
| 4863529 | Thin film single crystal diamond substrate A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide ... | 09/05/1989 |
