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| Number | Title | Issue Date |
| 7396747 | Hetero-integrated strained silicon n- and p-MOSFETs The present invention provides semiconductor structures and a method of fabricating such structures for application of MOSFET devices. The semiconductor structures are fabricated in such a way so that the layer structure in the regions of the wafer where n-MOSFETs a... | 07/08/2008 |
| 7375385 | Semiconductor heterostructures having reduced dislocation pile-ups Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading di... | 05/20/2008 |
| 7368310 | Light generating semiconductor device and method of making the same In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor f... | 05/06/2008 |
| 7342261 | Light emitting device A light emitting device includes a substrate having a patterned surface and formed with a plurality of spaced apart cavities, and an epitaxial layer formed on the patterned surface of the substrate, having a patterned surface that is in face-to-face contact with the... | 03/11/2008 |
| 7262485 | Substrate for growing electro-optical single crystal thin film and method of manufacturing the same A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substr... | 08/28/2007 |
| 7202102 | Doped absorption for enhanced responsivity for high speed photodiodes A photodiode with a semiconductor intrinsic light absorption layer has at least one p-doped light absorption layer or an n-doped light absorption layer, and preferably both. The diode also has a cathode electrode and an anode electrode electrically coupled with the ... | 04/10/2007 |
| 7202512 | Construction of thin strain-relaxed SiGe layers and method for fabricating the same A construction of thin strain-relaxed SiGe layers and method for fabricating the same is provided. The construction includes a semiconductor substrate, a SiGe buffer layer formed on the semiconductor substrate, a Si(C) layer formed on the SiGe buffer layer, and an r... | 04/10/2007 |
| 7186580 | Light emitting diodes (LEDs) with improved light extraction by roughening Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an interior of the LED device. | 03/06/2007 |
| 7081410 | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least one second crystalline epitaxial layer on the at least one first layer.... | 07/25/2006 |
| 6703144 | Heterointegration of materials using deposition and bonding A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107 cm-2 and an in-plane lattice constant that is different f... | 03/09/2004 |
| 6703255 | Method for fabricating a III nitride film Plural island-shaped crystal portions are formed on a first Al-including nitride base. The island-shaped crystal portions are made of a second nitride, and have a nitride film including a third nitride epitaxially grown thereon. The island-shaped crystal ... | 03/09/2004 |
| 6699760 | Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconducto... | 03/02/2004 |
| 6700179 | Method for growing GaN compound semiconductor crystal and semiconductor substrate The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to fo... | 03/02/2004 |
| 6696306 | Methods of fabricating layered structure and semiconductor device A method of fabricating a layered structure including a substrate, a first semiconductor layer with a first thermal expansion coefficient 댚, and a second semiconductor layer with a second thermal expansion coefficient 댛... | 02/24/2004 |
| 6693302 | Semiconductor light-emitting element In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer ... | 02/17/2004 |
| 6693033 | Method of removing an amorphous oxide from a monocrystalline surface A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxid... | 02/17/2004 |
| 6679947 | Semiconductor substrate A thick GaN layer is grown on sapphire through an Au layer at a temperature lower than the melting point of 1064° C. of the Au layer, and temperature of a sample is raised to reach and exceed the melting point of the Au layer so that the Au layer is diss... | 01/20/2004 |
| 6676751 | Epitaxial film produced by sequential hydride vapor phase epitaxy An epitaxial film of a III-V compound may be formed on a non-native substrate by sequentially forming a plurality of epitaxial layers on the substrate at a growth temperature. By cooling the substrate and each sequentially grown epitaxial layer to a sub-g... | 01/13/2004 |
| 6673646 | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattic... | 01/06/2004 |
| 6667184 | Single crystal GaN substrate, method of growing same and method of producing same Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms f... | 12/23/2003 |
| 6667102 | Silicon layer highly sensitive to oxygen and method for obtaining same A highly oxygen-sensitive silicon layer (2) is formed on a substrate (4) of, for example, SiC. The layer (2) has a 4×3 surface structure. The silicon layer (2) is deposited on a surface of the substrate (4) in a substantially uniform manner. The highly o... | 12/23/2003 |
| 6667196 | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer ... | 12/23/2003 |
| 6657232 | Defect reduction in GaN and related materials A material with reduced surface defects includes a defect filter layer on an underlying material. The defect filter reduces dislocations and defects present in an underlying material. The defect filter include islands of one material formed on the underly... | 12/02/2003 |
| 6656269 | Method of manufacturing nitride system III-V compound layer and method of manufacturing substrate Provided is a method of manufacturing a nitride system III-V compound layer which improves the quality and facilitates the manufacturing process and a method of manufacturing a substrate employing the method of manufacturing a nitride system III-V compoun... | 12/02/2003 |
| 6653166 | Semiconductor device and method of making same The method produces coherent dislocation-free regions from initially dislocated and/or defect-rich lattice mismatched layer grown on top of the substrate having a different lattice constant, which does not contain any processing steps before of after the ... | 11/25/2003 |
| 6649493 | Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Gr... | 11/18/2003 |
| 6649287 | Gallium nitride materials and methods The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon subs... | 11/18/2003 |
| 6649288 | Nitride film A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant "c" of the c-axis of the Group III nitri... | 11/18/2003 |
| 6646293 | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a la... | 11/11/2003 |
| 6645836 | Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer 7, which is lattice-relieved and hardly ha... | 11/11/2003 |
| 6645295 | Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor A buffer layer 2 made of aluminum nitride (AlN) is formed on a substrate 1 and is formed into an island pattern such as a dot pattern, a striped pattern, or a grid pattern such that substrate-exposed portions are formed in a scattered manner. A group III ... | 11/11/2003 |
| 6638838 | Semiconductor structure including a partially annealed layer and method of forming the same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apar... | 10/28/2003 |
| 6638872 | Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a la... | 10/28/2003 |
| 6639254 | Epitaxial layer capable of exceeding critical thickness A substrate has a principal surface exposing a first semiconductor material. A micro structure is disposed on the principal surface of the substrate. The micro structure is made of a second semiconductor material having a lattice constant different from a... | 10/28/2003 |
| 6635110 | Cyclic thermal anneal for dislocation reduction The invention provides processes for producing a very low dislocation density in heterogeneous epitaxial layers with a wide range of thicknesses, including a thickness compatible with conventional silicon CMOS processing. In a process for reducing disloca... | 10/21/2003 |
| 6630695 | InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire A GaN based three layer buffer structure disposed on a substrate, and having a GaN layer disposed on the three layer buffer structure, the GaN layer serving as a platform for growth of a light emitting structure thereon.... | 10/07/2003 |
| 6630690 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride... | 10/07/2003 |
| 6630692 | III-Nitride light emitting devices with low driving voltage III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, an... | 10/07/2003 |
| 6623560 | Crystal growth method A crystal growth method includes forming a mask layer capable of impeding crystal growth on a substrate in such a way a first nitride semiconductor layer has irregularities at a surface thereof exposed at a window region opened at a part of the mask layer... | 09/23/2003 |
| 6623877 | III nitride epitaxial wafer and usage of the same An epitaxial wafer includes a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al epitaxially grown on the base material and a GaN film, preferably having a thickness of 50 Å or more, formed on the... | 09/23/2003 |
