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| Number | Title | Issue Date |
| 7442589 | System and method for uniform multi-plane silicon oxide layer formation for optical applications Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and... | 10/28/2008 |
| 7416917 | Method of fabricating electroluminescent display A method for fabrication organic light emitting diode (OLED) displays. A white light OLED element is formed on the first substrate. A micro-cavity layer is formed on a second substrate. A color filter is formed on the micro-cavity layer. The first and the second sub... | 08/26/2008 |
| 7315064 | Bonded wafer and method of producing bonded wafer The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal ... | 01/01/2008 |
| 7217635 | Process for preparing a bonding type semiconductor substrate The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1−yAly)1−xP on a GaAs substrate 12 to form an epi-wafer having an n-typ... | 05/15/2007 |
| 7195941 | Optical devices and methods to construct the same Optical devices and methods for constructing the same are disclosed. An example optical device includes an optical transmitter, a photodetector and a waveguide optically coupling the optical transmitter and the photodetector. It also includes a substrate having a fi... | 03/27/2007 |
| 6677249 | Method for manufacturing breakaway layers for detaching deposited layer systems A method for removing layers or layer systems from a substrate and subsequent application onto an alternative substrate. A porous breakaway layer is formed by anodization in hydrofluoric acid. Optionally, a stabilizing layer with lower porosity is previou... | 01/13/2004 |
| 6673646 | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattic... | 01/06/2004 |
| 6583436 | Strain-engineered, self-assembled, semiconductor quantum dot lattices A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor layer, a... | 06/24/2003 |
| 6486042 | Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby Methods of forming compound semiconductor layers include the steps of forming a plurality of selective growth regions at spaced locations on a first substrate and then forming a plurality of semiconductor layers at spaced locations on the first substrate ... | 11/26/2002 |
| 6461944 | Methods for growth of relatively large step-free SiC crystal surfaces A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of ... | 10/08/2002 |
| 6329088 | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the crystalline direction of the substrate. The resultant sili... | 12/11/2001 |
| 6261929 | Methods of forming a plurality of semiconductor layers using spaced trench arrays Methods of forming compound semiconductor layers include the steps of forming a plurality of selective growth regions at spaced locations on a first substrate and then forming a plurality of semiconductor layers at spaced locations on the first substrate ... | 07/17/2001 |
| 6258637 | Method for thin film deposition on single-crystal semiconductor substrates A method of preparing a surface for and forming a thin film on a single-crystal silicon substrate is disclosed. One embodiment of his method comprises forming an oxidized silicon layer (which may be a native oxide) on at least one region of the substrate,... | 07/10/2001 |
| 6254794 | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocryst... | 07/03/2001 |
| 6171512 | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocryst... | 01/09/2001 |
| 6107197 | Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth A method of removing a carbon-contaminated layer from a silicon substrate surface before a silicon epitaxial growth on the silicon substrate surface. A carbon-contaminated layer on the silicon substrate is exposed to a chlorine radical to cause a chemical... | 08/22/2000 |
| 6107113 | Method of relaxing a stressed film by melting an interface layer The present invention relates to the technological field of manufacturing semiconductor materials for optoelectronic and microelectronic components, and it relates specifically to the method of making stacks of metamorphic layers of materials having latti... | 08/22/2000 |
| 5993538 | Method of forming single-crystalline thin film using beam irradiating method In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reactio... | 11/30/1999 |
| 5980631 | Method for manufacturing III-V semiconductor layers containing nitrogen A method for manufacturing III-V semiconductor layers containing nitrogen whereby during the growth of the layers, the setting of the material sources for Al, In and Ga remains fixed. During the transition to the growth of a layer with another mixed-cryst... | 11/09/1999 |
| 5920795 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device is disclosed herein by which the contamination of an epitaxial film-Si substrate interface with carbon can be solved without allowing boron to remain in the epitaxial film-Si substrate interface. The metho... | 07/06/1999 |
| 5895248 | Manufacture of a semiconductor device with selectively deposited semiconductor zone A method of a manufacturing a semiconductor device whereby a layer of insulating material and a layer of polycrystalline silicon are provided on a surface of a monocrystalline wafer. A window is then provided in the layer of polycrystalline silicon and a ... | 04/20/1999 |
| 5882401 | Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth A method for manufacturing a silicon single crystal substrate for use of an epitaxial layer growth. The method comprises the steps of: growing a CVD film on a rear surface and a peripheral side portion, of the silicon single crystal substrate; removing a ... | 03/16/1999 |
| 5872022 | Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser A method of etching a III-V compound semiconductor uses an etching gas including the group V element of the III-V compound semiconductor substrate layer while keeping the III-V compound semiconductor layer at a temperature higher than the crystal growth t... | 02/16/1999 |
| 5861058 | Composite structure and method for the production thereof A composite structure for electronic components, having a base substrate with a flat side provided with a depression, and having a cover layer which is disposed on the flat side structured by the depression, and the depression being covered to form a holl... | 01/19/1999 |
| 5834363 | Method of manufacturing semiconductor wafer, semiconductor wafer manufactured by the same, semiconductor epitaxial wafer, and method of manufacturing the semiconductor epitaxial wafer There is disclosed a method of manufacturing a semiconductor wafer which has a dopant evaporation preventive film formed on one of main surfaces thereof, wherein a film serving as the dopant evaporation preventive film is formed on the one of the main sur... | 11/10/1998 |
| 5814150 | Method of and apparatus for forming single-crystalline thin film, beam irradiator, beam irradiating method and beam reflecting device In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reactio... | 09/29/1998 |
| 5795385 | Method of forming single-crystalline thin film by beam irradiator In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reactio... | 08/18/1998 |
| 5780343 | Method of producing high quality silicon surface for selective epitaxial growth of silicon A method of producing a high quality silicon surface prior to carrying out a selective epitaxial growth of silicon process for forming an active device region on a substrate. The process flow of the present invention eliminates the need for the sacrificia... | 07/14/1998 |
| 5776253 | Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reactio... | 07/07/1998 |
| 5767020 | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocryst... | 06/16/1998 |
| 5735949 | Method of producing electronic, electrooptical and optical components A buried amorphous layer on a crystalline substrate with a monocrystalline surface layer, which is transformed into a mixed-crystal or chemical compound, avoids the formation of lattice defects at the interface even where the lattice parameters of the sub... | 04/07/1998 |
| 5714765 | Method of fabricating a compositional semiconductor device A method of fabricating a compositional semiconductor device comprising a antum well wire or quantum dot superlattice structure, in particular a device selected from the group comprising lasers, photodiodes, resonant tunneling transistors, resonant tunnel... | 02/03/1998 |
| 5693139 | Growth of doped semiconductor monolayers A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas intr... | 12/02/1997 |
| 5637145 | Method of vapor phase epitaxial growth In a vapor phase epitaxial growth process, formation of a silicon nodule on a back side protective film on a wafer is prevented. In the process, a susceptor situated within a reaction chamber is provided with a depression portion for supporting a wafer at... | 06/10/1997 |
| 5635414 | Low cost method of fabricating shallow junction, Schottky semiconductor devices Significant reduction in the cost of fabrication of shallow junction, Schottky or similar semiconductor devices without sacrifice of functional characteristics, while at the same time achieving the advantages is achieved, after the non-polishing cleaning ... | 06/03/1997 |
| 5599389 | Compound semiconductor and method of manufacturing the same According to this invention, there is provided a compound semiconductor substrate including, on a compound semiconductor base containing a high-concentration impurity, a high-resistance single-crystal layer consisting of the same compound semiconductor as... | 02/04/1997 |
| 5552330 | Resonant tunneling fet and methods of fabrication A resonant tunneling FET including a heterostructure FET with a channel layer having a first current contact and a control contact operatively coupled thereto and a resonant tunneling device, including a quantum well layer sandwiched between barrier layer... | 09/03/1996 |
| 5503657 | Process for the separation of a gaseous hydride or a mixture of gaseous hydrides with the aid of a membrane The invention relates to a process for the separation of a gaseous hydride or a mixture of gaseous hydrides from a gaseous medium containing at least one gas from the group consisting of H2, Ar, He, according to which the gaseous medium is pass... | 04/02/1996 |
| 5500388 | Heat treatment process for wafers In order to form a film on a surface of a semiconductor wafer, a multiplicity of wafers are individually mounted on ring-shaped mounts of a wafer boat, while the temperature within a reaction tube is set at, e.g., 400° C. under a nitrogen gas atmosphere.... | 03/19/1996 |
| 5476811 | Method of growing epitaxial layers A method of growing a plurality of epitaxial layers each having a property which is different from each other simultaneously on a common substrate comprises steps of forming at least a first crystal surface and a second crystal surface which are crystallo... | 12/19/1995 |
