Class 257/E21.121 - Substrate is crystalline insulating material, e.g., sapphire (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.119. This subclass
No. of patents: 149
Last issue date: 10/28/2008

«First «Previous1 2 3 4 Next»Last»

Number	Title	Issue Date
7442589	System and method for uniform multi-plane silicon oxide layer formation for optical applications Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and...	10/28/2008
7416924	Organic light emitting display with single crystalline silicon TFT and method of fabricating the same Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the singl...	08/26/2008
7399692	III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes. ...	07/15/2008
7393723	Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the la...	07/01/2008
7364933	Image sensor and method for forming the same A method for forming an image sensor is provided. The method includes providing a semiconductor substrate having a pixel region and a peripheral circuit region, forming a photoelectric transformation section at the semiconductor substrate of the pixel region, formin...	04/29/2008
7358162	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temp...	04/15/2008
7358544	Nitride semiconductor light emitting device A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-s...	04/15/2008
7327000	Patterned thin film graphite devices and method for making same In a method of making graphite devices, a preselected crystal face of a crystal is annealed to create a thin-film graphitic layer disposed against selected face. A preselected pattern is generated on the thin-film graphitic layer. A functional structure includes a c...	02/05/2008
7315064	Bonded wafer and method of producing bonded wafer The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal ...	01/01/2008
7183585	Semiconductor device and a method for the manufacture thereof To provide a semiconductor device that excels in the manufacturing efficiency and device reliability, and a method for the manufacture thereof. The side of a device is composed of scribed grooves 13 and a cleavage plane 100. ...	02/27/2007
7135715	Co-doping for fermi level control in semi-insulating Group III nitrides Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping the Group III nitride layer with a deep level dopant, such as a deep l...	11/14/2006
6703255	Method for fabricating a III nitride film Plural island-shaped crystal portions are formed on a first Al-including nitride base. The island-shaped crystal portions are made of a second nitride, and have a nitride film including a third nitride epitaxially grown thereon. The island-shaped crystal ...	03/09/2004
6696306	Methods of fabricating layered structure and semiconductor device A method of fabricating a layered structure including a substrate, a first semiconductor layer with a first thermal expansion coefficient 댚, and a second semiconductor layer with a second thermal expansion coefficient 댛...	02/24/2004
6693033	Method of removing an amorphous oxide from a monocrystalline surface A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxid...	02/17/2004
6652648	Method for fabricating GaN single crystal substrate A method for fabricating a gallium nitride single crystal substrate is provided. The method involves: forming a GaN layer on the front side of a sapphire substrate; heating the sapphire substrate at a temperature of 600-1,000° C.; and separating the GaN ...	11/25/2003
6649288	Nitride film A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant "c" of the c-axis of the Group III nitri...	11/18/2003
6630692	III-Nitride light emitting devices with low driving voltage III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, an...	10/07/2003
6630695	InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire A GaN based three layer buffer structure disposed on a substrate, and having a GaN layer disposed on the three layer buffer structure, the GaN layer serving as a platform for growth of a light emitting structure thereon....	10/07/2003
6624009	Forming a crystalline semiconductor film on a glass substrate A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is...	09/23/2003
6623877	III nitride epitaxial wafer and usage of the same An epitaxial wafer includes a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al epitaxially grown on the base material and a GaN film, preferably having a thickness of 50 Å or more, formed on the...	09/23/2003
6617187	Method for fabricating an electrically addressable silicon-on-sapphire light valve A method for fabricating a monolithically integrated liquid crystal array display and control circuitry on a silicon-on-sapphire structure comprises the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphir...	09/09/2003
6617261	Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substra...	09/09/2003
6593016	Group III nitride compound semiconductor device and producing method thereof A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X...	07/15/2003
6586819	Sapphire substrate, semiconductor device, electronic component, and crystal growing method In a sapphire substrate having a heteroepitaxial growth surface, the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (0110) plane of the sapphire substrate about a c-axis of the sapphire substrate through 8° to 20° in a crys...	07/01/2003
6576533	Method of forming semiconductor thin film of group III nitride compound semiconductor. A semiconductor thin film includes an underlying semiconductor layer in which a plurality of facets are arranged, and a selectively grown/buried semiconductor layer formed to cover the underlying semiconductor layer, wherein the facets are formed by plane...	06/10/2003
6554896	Epitaxial growth substrate and a method for producing the same An Alx Gay Inz N(x+y+z=1,x,y,zࣙ0) film is epitaxially grown, for example to a thickness of about 1.0 μm, on a surface of a base material. A surface of the Alx Gay Inz N film opposing the...	04/29/2003
6534791	Epitaxial aluminium-gallium nitride semiconductor substrate A nitride semiconductor epitaxial substrate includes a low-temperature-deposited buffer layer, the composition of which is Alx Ga1-x N, where 0ࣘxࣘ1, and a single crystalline layer, the composition of which is Aly Ga	03/18/2003
6495867	InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire A GaN based three layer buffer on a sapphire substrate provides a template for growth of a high quality I GaN layer as a substitute substrate for growth of a Nitride based LED....	12/17/2002
6462357	Epitaxial growth of nitride compound semiconductor The present invention provides materials and structures to reduce dislocation density when growing a III-nitride compound semiconductor. A II-nitride compound single crystal-island layer is included in the semiconductor structure, and III-nitride compound...	10/08/2002
6440214	Method of growing a semiconductor layer A method of growing a nitride semiconductor layer, such as a GaN layer, by molecular beam epitaxy comprises the step of growing a GaAlN nucleation layer on a substrate by molecular beam epitaxy. The nucleation layer is annealed, and a nitride semiconducto...	08/27/2002
6433362	Semiconductor device with insulating and transparent original substrate The invention concerns an integrated circuit or chip comprising an original support and active and passive microscopic functional elements present in a thin layer made of a monocrystalline semiconductor material. The invention is characterised in that the...	08/13/2002
6420242	Separation of thin films from transparent substrates by selective optical processing A method of separating a thin film of GaN epitaxially grown on a sapphire substrate. The thin film is bonded to an acceptor substrate, and the sapphire substrate is laser irradiated with a scanned beam at a wavelength at which sapphire is transparent but ...	07/16/2002
6420283	methods for producing compound semiconductor substrates and light emitting elements Methods are provided for producing a compound semiconductor substrate including: a mica substrate; and a III-V group compound semiconductor layer containing nitrogen as its main component grown on the mica substrate....	07/16/2002
6406931	Structural tuning of residual conductivity in highly mismatched III-V layers A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the g...	06/18/2002
6399429	Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-t...	06/04/2002
6392257	Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apar...	05/21/2002
6380050	Method of epitaxially growing a GaN semiconductor layer A method for growth of strain free epitaxial layers of semiconductors on highly lattice mismatched substrates is suggested using a buffer layer with a solid-liquid phase transition to accommodate high mismatch between substrate and semiconductor....	04/30/2002
6365921	Gallium-nitride-based semiconductor light emitting device and fabrication method A GaN-based semiconductor light emitting device is provided that has superior light emitting characteristics by controlling occurrence of a threading dislocation and keeping the flatness of a film GaN-based semiconductor light emitting device fabrication ...	04/02/2002
6270574	Method of growing a buffer layer using molecular beam epitaxy A method of growing a Group III-V nitrite buffer layer on a substrate made of a different material by molecular beam epitaxy is provided, which compensates for lattice mismatching between a material of the substrate and a material of a further layer to be...	08/07/2001
6248621	Method of growing high-quality crystalline silicon quantum wells for RTD structures A method of forming a crystalline silicon well over a perovskite barrier layer, preferably for use in formation of a resonant tunneling diode. A silicon substrate (1) is provided of predetermined crystallographic orientation. A layer of crystallographic p...	06/19/2001

«First «Previous1 2 3 4 Next»Last»

PatentStorm

Did You Know...

PatentStorm News

Class 257/E21.121 - Substrate is crystalline insulating material, e.g., sapphire (EPO)