Class 257/E21.11 - Doping the epitaxial deposit (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.108. This subclass
No. of patents: 68
Last issue date: 02/05/2008

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Number	Title	Issue Date
7326972	Interconnect structure in integrated circuits A device includes an interconnect structure having a number of circuit paths to transfer signals. The circuit paths transfer the signals at different speed to reduce the coupling capacitance effect between adjacent circuit paths. ...	02/05/2008
6977395	Semiconductor device A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conducti...	12/20/2005
6921678	Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrog...	07/26/2005
6620709	Fabrication of semiconductor materials and devices with controlled electrical conductivity A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MO...	09/16/2003
6617261	Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substra...	09/09/2003
6614115	Enhancement of carrier concentration in As-containing layers A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the ra...	09/02/2003
6586774	Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source contai...	07/01/2003
6559467	P-n heterojunction-based structures utilizing HVPE grown III-V compound layers A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g...	05/06/2003
6559038	Method for growing p-n heterojunction-based structures utilizing HVPE techniques A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g...	05/06/2003
6555452	Method for growing p-type III-V compound material utilizing HVPE techniques A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g...	04/29/2003
6498111	Fabrication of semiconductor materials and devices with controlled electrical conductivity A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MO...	12/24/2002
6479839	III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g...	11/12/2002
6476420	P-N homojunction-based structures utilizing HVPE growth III-V compound layers A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g...	11/05/2002
6440764	Enhancement of carrier concentration in As-containing contact layers A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the ra...	08/27/2002
6329215	Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity The subject of the Invention is the method of fabrication of nitride semiconductor A3 B5 such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural ...	12/11/2001
6281099	Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type In growing single AlN thin films on a semiconductor substrate by rapidly cooling a beam of atomic Al and atomic or molecular N obtained by exciting or decomposing N2 with an electromagnetic wave on the semiconductor substrate, an n-type dopant ...	08/28/2001
6277713	Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor The amorphous and polycrystalline structures of a GaN-based semiconductor are grown on the surface of a compound semiconductor layer showing by formation of Inx Aly Ga.sub.(1-x-y) N(0ࣘ(x,y)ࣘ1.0000, and (x+y)ࣘ1.0000). More speci...	08/21/2001
6225195	Method for manufacturing group III-V compound semiconductor A method for manufacturing a group III-V compound semiconductor represented by the general formula Inx Gay Alz N (where x+y+z=1, 0ࣘxࣘ1, 0ࣘyࣘ1, and 0ࣘzࣘ1) by metalorganic vapor phase epitaxy method is provided. ...	05/01/2001
6218269	Process for producing III-V nitride pn junctions and p-i-n junctions A process is disclosed for producing pn junctions and p-i-n junctions from group III nitride compound semiconductor materials. The process comprises growing of pn junctions and p-i-n junctions by hydride vapor phase epitaxy employing hydride of nitrogen (...	04/17/2001
6117700	Method for fabricating semiconductor device having group III nitride First, n-type contact layer of GaN, n-type cladding layer of AlGaN, active layer of InGaN, first Mg-doped layer of AlGaN and second Mg-doped layer of GaN are grown in this order over a sapphire substrate. Thereafter, the substrate, including the second Mg...	09/12/2000
6096617	Method of manufacturing a carbon-doped compound semiconductor layer A compound semiconductor device is manufactured by forming a carbon-doped compound semiconductor device at a predetermined growth temperature on a compound semiconductor substrate, stopping the growth and changing the growth temperature of the compound se...	08/01/2000
6060119	Compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound tertiarybutylbis-(dimethylamino)phosphine A new compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound, which has the formula ((CH3)3 C) ((CH3)2 N)2 P. The process has the steps of: (1) reacting phosphorus...	05/09/2000
6020253	Use of tertiarybutylbis-(dimethylamino)phosphine in forming semiconductor material by chemical vapor deposition A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH3)3 C)((CH3)2 N)2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiar...	02/01/2000
6001172	Apparatus and method for the in-situ generation of dopants A method and apparatus for generating a dopant gas species which is a reaction product of a metal and a gas reactive therewith to form the dopant gas species. A source mass of metal is provided and contacted with the reactive gas to yield a dopant gas spe...	12/14/1999
5982024	High concentration doped semiconductor A semiconductor comprising an n-type semiconductor layer 1 with donor impurities added thereto, a semiconductor layer 2 having the value of energy from vacuum level to Fermi level larger than the value of energy from vacuum level to the lower end of the c...	11/09/1999
5926726	In-situ acceptor activation in group III-v nitride compound semiconductors A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy is carried out in a MOCVD reactor by growing a III-V nitride compound semiconductor in the reactor employing a reaction gas containing a p-type impurity ...	07/20/1999
5888886	Method of doping gan layers p-type for device fabrication High p-type impurity concentration levels are achieved in Group III nitride semiconductor layers by depositing a nitrogen-rich surface onto a supporting layer while impeding the flow of Group III element reactant. Thereafter, the Group III element source ...	03/30/1999
5874320	Method for forming P-type gallium nitride A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen ato...	02/23/1999
5865888	Semiconductor device epitaxial layer lateral growth rate control method using CBr₄ A semiconductor device epitaxial layer lateral growth rate control method using CBr4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr4 amount doped into the epitaxial layer during the epitaxia...	02/02/1999
5858818	Formation of InGaSa p-n Junction by control of growth temperature An epitaxial growth method for a compound semiconductor thin film, capable of forming a p-n junction with an atomic-scale ultra-micro structure is disclosed. The method involves loading the compound semiconductor substrate in a reaction chamber, injecting...	01/12/1999
5837056	Method for growing III-V group compound semiconductor crystal In a method for growing a III-V group compound semiconductor crystal, as a Si dopant, a compound including a Si atom bonded to an alkyl group and a hydrogen atom is used. Also, a compound including two Si atoms in one molecule thereof, at least one of sai...	11/17/1998
5831277	III-nitride superlattice structures The subject invention involves the p-type doping of Alx Ga1-x N thin films with a III-nitride composition and specifically a {Alx Ga1-x N/GaN} short-period superlattice structure of less than 5000 Å thickness i...	11/03/1998
5824151	Vapor deposition method The method of forming a III-V group compound semiconductor crystalline layer on a semiconductor crystal containing at least V-group compound, includes the steps of: performing the crystal growth of the III-V compound semiconductor crystalline layer; and s...	10/20/1998
5821155	Method of growing n-type III-V semiconductor materials on a substrate using SiI₄ A method of doping a compound semiconductor layer n-type during epitaxial growth of the compound semiconductor layer includes supplying source materials including respective elements of a compound semiconductor material to a heated monocrystalline substra...	10/13/1998
5814534	Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium In a method for doping with beryllium, when epitaxially growing a III-V compound semiconductor, (MeCP)2 Be is employed as a dopant source. Since (MeCP)2 Be has a lower vapor pressure than diethylberyllium (DEBe) which is conventional...	09/29/1998
5786233	Photo-assisted annealing process for activation of acceptors in semiconductor compound layers Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing....	07/28/1998
5783845	Semiconductor device and its manufacture utilizing crystal orientation dependence of impurity concentration A technique for manufacturing a semiconductor device includes the steps of preparing a stepped substrate made of a group III-V compound semiconductor and having a flat surface exposing a (1 0 0) plane and a slanted surface exposing an (n 1 1)B plane whrer...	07/21/1998
5738722	III-V system compound semiconductor device and method for manufacturing the semiconductor device The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH2 I2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a high...	04/14/1998
5705403	Method of measuring doping characteristic of compound semiconductor in real time A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis appar...	01/06/1998
5693139	Growth of doped semiconductor monolayers A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas intr...	12/02/1997

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Class 257/E21.11 - Doping the epitaxial deposit (EPO)