Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 7407869 | Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined b... | 08/05/2008 |
| 7365028 | Methods of forming metal oxide and semimetal oxide The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one semimetal-and-halogen-containing material over a semiconductor substrate surfa... | 04/29/2008 |
| 7351668 | Film formation method and apparatus for semiconductor process An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a ca... | 04/01/2008 |
| 7329554 | Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing... | 02/12/2008 |
| 7208412 | Method of forming metal oxide and semimetal oxide The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one semimetal-and-halogen-containing material over a semiconductor substrate surfa... | 04/24/2007 |
| 7192888 | Low selectivity deposition methods A deposition method includes forming a nucleation layer over a substrate, forming a layer of a first substance at least one monolayer thick chemisorbed on the nucleation layer, and forming a layer of a second substance at least one monolayer thick chemisorbed on the... | 03/20/2007 |
| 7183208 | Methods for treating pluralities of discrete semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 02/27/2007 |
| 7153726 | Semiconductor device with magnetically permeable heat sink A semiconductor device is attached to a heat sink by glue that is both thermally conductive and magnetically permeable. The glue fills different features in the surface of the semiconductor device so that there is good coupling between the semiconductor device and t... | 12/26/2006 |
| 7135389 | Irradiation method of laser beam A laser irradiation method using a laser crystallization method which can heighten an efficiency of substrate processing as compared to a conventional one and also heighten mobility of a semiconductor film is provided. It is an irradiation method of a laser beam in ... | 11/14/2006 |
| 6693022 | CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition... | 02/17/2004 |
| 6686230 | Semiconducting devices and method of making thereof A process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined dissociation temperature so that the gas dissociates into fractions, whereby those fract... | 02/03/2004 |
| 6670543 | Thin-film solar cells and method of making There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas. The deposited body is treated with a conversion gas to pro... | 12/30/2003 |
| 6667525 | Semiconductor device having hetero grain stack gate A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate ins... | 12/23/2003 |
| 6660572 | Thin film semiconductor device and method for producing the same In order to fabricate a high performance thin film semiconductor device using a temperature process in which it is possible to use inexpensive glass substrates, a highly crystalline mixed-crystallinity semiconductor film is deposited by means of PECVD usi... | 12/09/2003 |
| 6635583 | Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. The same material may also be used as a barrier ... | 10/21/2003 |
| 6620247 | Thin polycrystalline silicon film forming apparatus A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming ... | 09/16/2003 |
| 6610374 | Method of annealing large area glass substrates A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature ... | 08/26/2003 |
| 6610361 | Multi-layer assemblies with predetermined stress profile and method for producing same Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level ... | 08/26/2003 |
| 6589822 | Manufacturing method for top-gate type and bottom-gate type thin film transistors A microcrystal silicon film is formed on a substrate by using a silicide gas, a hydrogen gas, and a source gas that enables introduction of a metal element for accelerating crystallization of silicon in a capacitance-coupling plasma CVD apparatus. The act... | 07/08/2003 |
| 6576534 | Method for forming a semiconductor A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and... | 06/10/2003 |
| 6559037 | Process for producing semiconductor device having crystallized film formed from deposited amorphous film A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced ... | 05/06/2003 |
| 6514803 | Process for making an amorphous silicon thin film semiconductor device In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), said active layer is produced through the steps of producing an amorphous silicon layer on said substrate through... | 02/04/2003 |
| 6506451 | Composite structure and process for producing it A composite structure having a substantially monocrystalline growth substrate and at least one monocrystalline or polycrystalline layer of diamond or diamond-like material arranged on a surface of the growth substrate, the surface of the growth substrate ... | 01/14/2003 |
| 6503771 | Semiconductor photoelectrically sensitive device A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 01/07/2003 |
| 6488776 | Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition chamber. A reactant gas mix comprising a silicon source gas, bor... | 12/03/2002 |
| 6479166 | Large area polysilicon films with predetermined stress characteristics and method for producing same Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level ... | 11/12/2002 |
| 6479373 | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition... | 11/12/2002 |
| 6475627 | Semiconductor wafer and vapor growth apparatus It is the object of the present invention to provide not only a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity and substantially no slip dislocation on a main surface of a semiconductor single crystal substrate ... | 11/05/2002 |
| 6472296 | Fabrication of photovoltaic cell by plasma process A process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discha... | 10/29/2002 |
| 6468885 | Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates A method of fabricating device quality, thin-film a-Si:H for use as semiconductor material in photovoltaic and other devices, comprising in any order; positioning a substrate in a vacuum chamber adjacent a plurality of heatable filaments with a spacing di... | 10/22/2002 |
| 6465045 | Low stress polysilicon film and method for producing same Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level o... | 10/15/2002 |
| 6461444 | Method and apparatus for manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device, in which a substrate is successively transferred through a first film-forming chamber for forming a semiconductor layer of a first conductivity type, a second film-forming chamber for forming ... | 10/08/2002 |
| 6455400 | Semiconductor processing methods of forming silicon layers In one aspect, the invention includes a semiconductor processing method comprising depositing a silicon layer over a substrate at different deposition temperatures which at least include increasing the deposition temperature through a range of from about ... | 09/24/2002 |
| 6455372 | Nucleation for improved flash erase characteristics The present invention provides a method for improving the erase speed and the uniformity of erase characteristics in erasable programmable read-only memories. This result is achieved by forming polycrystalline floating gate layers with optimized grain siz... | 09/24/2002 |
| 6447850 | Polycrystalline silicon thin film forming method A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming ... | 09/10/2002 |
| 6427622 | Hot wire chemical vapor deposition method and apparatus using graphite hot rods A hot wire chemical vapor deposition method and apparatus for fabricating high quality amorphous, micro-crystalline, and poly-crystalline thin film silicon, or related materials, devices and large area modules is described. A silane gas impinges upon a ho... | 08/06/2002 |
| 6410090 | Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition chamber. A reactant gas mix comprising a silicon source gas, bor... | 06/25/2002 |
| 6403443 | Method for reducing surface humps of doped amorphous silicon layer A method for reducing surface hump phenomena of a doped amorphous silicon layer. A dielectric layer is formed on the device, and subsequently, is patterned to form openings for exposure of the electrode surface of the device. A first deposition step is pe... | 06/11/2002 |
| 6403479 | Process for producing semiconductor and apparatus for production To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility a... | 06/11/2002 |
| 6399411 | Method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device A method for forming a non-single-crystal semiconductor thin film and a photovoltaic device using an apparatus, which has a film deposition chamber with a film-forming space surrounded by a film deposition chamber wall and a belt-like substrate. An extern... | 06/04/2002 |
